Hybrid perovskite material processing

1. A perovskite material prepared by a process comprising the steps of:

preparing a thin-film precursor ink, wherein preparing the thin-film precursor ink comprises the steps of:

introducing a lead halide into a first vessel;

introducing a first solvent to the first vessel;

contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution;

introducing a Group 1 metal halide into a second vessel;

introducing a second solvent into the second vessel; and

contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution;

contacting the lead halide solution with the Group 1 metal halide solution to form the thin-film precursor ink;

depositing the thin-film precursor ink onto a substrate;

drying the thin-film precursor ink to form a thin film;

annealing the thin film; and

rinsing the thin film with a salt solution comprising a third solvent and a salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, ethene tetramine halide, imidazolium halide, 1,2,2-triaminovinyl ammonium halide, and 5-aminovaleric acid hydrohalide.

2. The perovskite material of claim 1 , wherein the lead halide comprises lead (II) iodide.

3. The perovskite material of claim 1 , wherein the Group 1 metal halide comprises cesium iodide.

4. The perovskite material of claim 1 , wherein the Group 1 metal halide comprises rubidium iodide.

5. The perovskite material of claim 1 , wherein the Group 1 metal halide comprises sodium iodide.

6. The perovskite material of claim 1 , wherein the Group 1 metal halide comprises potassium iodide.

7. The perovskite material of claim 1 , wherein the first solvent and the second solvent are selected from the group consisting of dry N-cyclohexyl-2-pyrrolidone, alkyl-2-pyrrolidone, dimethylformamide (DMF), dialkylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, tert-butylpyridine, pyridine, alkylpyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations therof.

8. The perovskite material of claim 1 , wherein the first solvent comprises dry dimethylformamide (DMF).

9. The perovskite material of claim 1 , wherein the second solvent comprises dimethylsulfoxide (DMSO).

10. The perovskite material of claim 1 , wherein the third solvent is selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform, chlorobenzene, dimethylsulfoxide, water, and combinations thereof.

11. The perovskite material of claim 1 , wherein the thin-film precursor ink has a molar concentration of the Group 1 metal halide that is between 1% and 25% of the molar concentration of the lead halide.

12. The perovskite material of claim 1 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40° C. to about 60° C.

13. The perovskite material of claim 1 , wherein the salt comprises formamidinium iodide.

14. The perovskite material of claim 1 , wherein the salt comprises methylammonium iodide.

15. The perovskite material of claim 1 , wherein rinsing the thin film comprises at least partial submersion in the salt solution.