IP Library Granted Patent US 10,541,412
Granted Patent B2
US 10,541,412 · App. 15/886,136 · Granted Jan 21, 2020

Surface modification of silicon particles for electrochemical storage

Inventors: Wei Wang (Newport Beach, CA); Benjamin Yong Park (Mission Viejo, CA); Ian Russell Browne (Irvine, CA)
Assignee: Enevate Corporation
H01M4/366C01B32/90H01B1/04H01M4/0471H01M4/134H01M4/1395H01M4/364H01M4/386H01M4/48H01M4/583H01M4/587H01M4/625H01M10/0525
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Quick Facts
Patent No.
US 10,541,412
App. No.
15/886,136
Granted
Jan 21, 2020
Kind
B2
Abstract

Silicon particles for active materials and electro-chemical cells are provided. The active materials comprising silicon particles described herein can be utilized as an electrode material for a battery. In certain embodiments, the composite material includes greater than 0% and less than about 90% by weight silicon particles, the silicon particles having an average particle size between about 10 nm and about 40 μm, wherein the silicon particles have surface coatings comprising silicon carbide or a mixture of carbon and silicon carbide, and greater than 0% and less than about 90% by weight of one or more types of carbon phases, wherein at least one of the one or more types of carbon phases is a substantially continuous phase.

Claims (18)

1. A method of forming a composite material film comprising:

providing a mixture comprising a precursor and silicon particles, wherein individual ones of the silicon particles comprise a surface layer including silicon monoxide (SiO), silicon dioxide (SiO 2 ), or silicon oxide (SiO x );

pyrolyzing the precursor to convert the precursor into one or more types of carbon phases; and

reacting one of the one or more types of carbon phases with the silicon monoxide (SiO), silicon dioxide (SiO 2 ), or silicon oxide (SiO x ) to form surface coatings comprising a mixture of carbon and silicon carbide on the silicon particles, whereby forming the composite material film having hard carbon as a matrix phase that is a continuous phase that extends across the entire film and the silicon carbide is between the silicon particles and the hard carbon.

2. The method of claim 1 , wherein the surface coatings form on 50% to 99% of the silicon particles.

3. The method of claim 1 , wherein the surface coatings form on 60% to 99% of the silicon particles.

4. The method of claim 1 , wherein the surface coatings form on 70% to 99% of the silicon particles.

5. The method of claim 1 , wherein the surface coatings form on substantially all of the silicon particles.

6. The method of claim 1 , wherein reacting comprises reacting the one of the one or more types of carbon phases with substantially all the silicon monoxide (SiO), silicon dioxide (SiO 2 ), or silicon oxide (SiO x ).

7. The method of claim 1 , wherein the surface coatings comprise silicon carbide and are substantially free of silicon oxide.

8. The method of claim 1 , wherein pyrolyzing the precursor comprises heating the mixture to a temperature of about 750° C. to about 1300° C.

9. The method of claim 8 , wherein pyrolyzing the precursor comprises heating the mixture to a temperature of about 800° C. to about 1200° C.

10. The method of claim 9 , wherein pyrolyzing the precursor comprises heating the mixture to a temperature of about 1175° C.

11. The method of claim 1 , further comprising:

casting the mixture on a substrate;

drying the mixture to form a film;

removing the film from the substrate; and

placing the film in a hot press.

Assignments (2)
SECURITY INTEREST Recorded Mar 10, 2026
From: ENEVATE CORPORATION
To: MCANDREWS, HELD & MALLOY LTD.
Reel/Frame 075093/0935 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2018
From: WANG, WEI; PARK, BENJAMIN YONG; BROWNE, IAN RUSSELL
To: ENEVATE CORPORATION
Reel/Frame 045660/0304 →
Continuity (2)
Continuation 14821586 · Aug 7, 2015
Related Publication 20180226642A1 · Aug 9, 2018
Cited By (1)
US 12,548,760