IP Library Granted Patent US 10,204,767
Granted Patent B2
US 10,204,767 · App. 15/886,486 · Granted Feb 12, 2019

Plasma source for a plasma CVD apparatus and a manufacturing method of an article using the plasma source

Inventors: Hirotomo Kawahara (Tokyo, JP); Nobutaka Aomine (Tokyo, JP); Kazunobu Maeshige (Tokyo, JP); Yuki Aoshima (Tokyo, JP); Hiroshi Hanekawa (Tokyo, JP)
Assignee: AGC Inc.
H01J37/32568C23C16/402C23C16/50C23C16/505H01J37/3244H01J37/32091H01J37/32577H05H1/46H01J2237/3321H05H2001/4675H05H2001/4682
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Quick Facts
Patent No.
US 10,204,767
App. No.
15/886,486
Granted
Feb 12, 2019
Kind
B2
Abstract

A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.

Claims (32)

1. A method of manufacturing an article, comprising:

positioning a processing object in a plasma CVD apparatus comprising a first electrode, a second electrode, a third electrode and a fourth electrode arrayed in a row in an order of the first, second, third and fourth electrodes;

supplying a source gas for film deposition from at least one interval between adjacent electrodes of the first, second, third and fourth electrodes;

conducting a first voltage applying process comprising applying a negative voltage to said first electrode and said second electrode adjacent to said first electrode, and applying a positive voltage to said third electrode and said fourth electrode adjacent to said third electrode; and

conducting a second voltage applying process comprising applying a positive voltage to said first electrode and said second electrode and applying a negative voltage to said third electrode and said fourth electrode,

wherein said first voltage applying process and said second voltage applying process are alternately conducted at every lapse of a predetermined time such that the film deposition is applied on the processing object.

2. A method of manufacturing an article according to claim 1 , wherein the supplying of the source gas comprises supplying the sources gas from each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

3. A method of manufacturing an article according to claim 2 , wherein the supplying of the source gas comprises uniformly supplying the source gas to each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

4. A method of manufacturing an article according to claim 3 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

5. A method of manufacturing an article according to claim 4 , further comprising:

supplying a reaction assist gas to each of the first, second, third and fourth electrode.

6. A method of manufacturing an article according to claim 3 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

7. A method of manufacturing an article according to claim 3 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

8. A method of manufacturing an article according to claim 1 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

9. A method of manufacturing an article according to claim 1 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

10. A method of manufacturing an article according to claim 1 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

11. A method of manufacturing an article, comprising:

positioning a processing object in a plasma CVD apparatus comprising a first electrode, a second electrode, a third electrode and a fourth electrode arrayed in a row in an order of the first, second, third and fourth electrodes;

supplying a source gas for film deposition from at least one interval between adjacent electrodes of the first, second, third and fourth electrodes;

conducting a first voltage applying process comprising applying a negative voltage to said first electrode and said fourth electrode and applying a positive voltage to said second electrode and said third electrode; and

conducting a second voltage applying process comprising applying a positive voltage to said first electrode and said fourth electrode and applying a negative voltage to said second electrode and said third electrode,

wherein said first voltage applying process and said second voltage applying process are alternately conducted at every lapse of a predetermined time such that the film deposition is applied on the processing object.

12. A method of manufacturing an article according to claim 11 , wherein the supplying of the source gas comprises supplying the sources gas from each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

13. A method of manufacturing an article according to claim 12 , wherein the supplying of the source gas comprises uniformly supplying the source gas to each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

14. A method of manufacturing an article according to claim 13 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

15. A method of manufacturing an article according to claim 14 , further comprising:

supplying a reaction assist gas to each of the first, second, third and fourth electrode.

16. A method of manufacturing an article according to claim 13 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

17. A method of manufacturing an article according to claim 13 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

18. A method of manufacturing an article according to claim 11 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

19. A method of manufacturing an article according to claim 11 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

20. A method of manufacturing an article according to claim 11 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

Assignments (1)
CHANGE OF NAME Recorded Aug 7, 2018
From: ASAHI GLASS COMPANY, LIMITED
To: AGC INC.
Reel/Frame 046730/0786 →
Priority Claims (1)
JP 2012-242663 · Nov 2, 2012 · national
Continuity (3)
Division 14699249
Continuation PCTJP2013078735 · Oct 23, 2013
Related Publication 20180158655A1 · Jun 7, 2018