Method and system for reclaiming memory using read counts
A method of a read reclaim operation of a memory controller, the method comprising: updating, during each read operation for a read operation unit among one or more read operation units included in each of a plurality of memory blocks, a first index for a corresponding one among the plurality of memory blocks and a second index for the read operation unit; detecting a warming block, the first index of which is over a first threshold among the plurality of memory blocks; detecting a read-hot-spot, the updated second index of which is over a second threshold among the read operation units included in the warming block; and performing the read reclaim operation on the read-hot-spot.
1. A method of a read reclaim operation of a memory controller, the method comprising:
updating, during a read operation for a read operation unit included in a memory block, a first index for the memory block and a second index for the read operation unit;
determining the memory block as a warming block when the updated first index is over a first threshold;
determining the read operation unit as a read-hot-spot when the memory block is the warming block and the updated second index is over a second threshold; and
programming data of the read-hot-spot into another memory block.
2. The method of claim 1 , wherein the first index is a remaining value obtained by subtracting an average read count value of a plurality of memory blocks of a memory device controlled by the memory controller from a read count value of the memory block, in which the read operation is performed for the read operation units.
3. The method of claim 2 , wherein the average read count value of the plurality of memory blocks is obtained by dividing sum of the read count values of the plurality of memory blocks by a number of the plurality of memory blocks.
4. The method of claim 1 , wherein the second index is a read count, which is increased according to the read operation performed in the read operation unit.
5. The method of claim 1 , wherein the read operation unit is the same as or smaller than a page of the memory block.
6. The method of claim 1 , wherein the first index is an increased amount of a read count value of the memory block for a predetermined time period.
7. The method of claim 6 , wherein the predetermined time period is a time interval, in which an accumulated amount of the read count value of the memory block is over a predetermined value.
8. A controller comprising:
a counter suitable for updating, during a read operation for a read operation unit included in a memory block, a first index for the memory block and a second index for the read operation unit;
a detector suitable for determining the memory block as a warming block when the updated first index is over a first threshold, and determining the read operation unit as a read-hot-spot when the memory block is the warming block and the updated second index is over a second threshold,
wherein the controller programs data of the read-hot-spot into another memory block.
9. The controller of claim 8 , wherein the first index is a remaining value obtained by subtracting an average read count value of a plurality of memory blocks of a memory device controlled by the controller from a read count value of the memory block, in which the read operation is performed for the read operation units.
10. The controller of claim 9 , wherein the average read count value of the plurality of memory blocks is obtained by dividing sum of the read count values of the plurality of memory blocks by a number of the plurality of memory blocks.
11. The controller of claim 8 , wherein the second index is a read count, which is increased according to the read operation performed in the read operation unit.
12. The controller of claim 8 , wherein the read operation unit is the same as or smaller than a page of the memory block.
13. The controller of claim 8 , wherein the first index is an increased amount of a read count value of the memory block for a predetermined time period.
14. The controller of claim 13 , wherein the predetermined time period is a time interval, in which an accumulated amount of the read count value of the memory block is over a predetermined value.
15. A semiconductor memory system comprising:
a semiconductor memory device; and
a controller,
wherein the controller includes:
a counter suitable for updating, during a read operation for a read operation unit included in, a first index for the memory block and a second index for the read operation unit;
a detector suitable for determining the memory block as a warming block when the updated first index is over a first threshold, and determining the read operation unit as a read-hot-spot when the memory block is the warming block and the updated second index is over a second threshold,
wherein the controller programs data of the read-hot-spot into another memory block.
16. The semiconductor memory system of claim 15 , wherein the first index is a remaining value obtained by subtracting an average read count value of a plurality of memory blocks of the semiconductor memory device from a read count value of the memory block, in which the read operation is performed to the read operation units.
17. The semiconductor memory system of claim 16 , wherein the average read count value of the plurality of memory blocks is obtained by dividing sum of the read count values of the plurality of memory blocks by a number of the plurality of memory blocks.
18. The semiconductor memory system of claim 15 , wherein the second index is a read count, which is increased according to the read operation performed in the read operation unit.
19. The semiconductor memory system of claim 15 , wherein the read operation unit is the same as or smaller than a page of the memory block.
20. The semiconductor memory system of claim 15 , wherein the first index is an increased amount of a read count value of the memory block for a predetermined time period, and
wherein the predetermined time period is a time interval, in which an accumulated amount of the read count value of the memory block is over a predetermined value.