Organic light-emitting diode with intermediate layer made of ytterbium element, display panel and display device
The disclosure discloses an organic light-emitting diode, a display panel and a display device. The organic light-emitting diode includes an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, where the charge generation layer includes a first doping layer, an intermediate layer and a second doping layer which are arranged in sequence along the direction far away from the cathode, where the first doping layer includes a P-type semiconductor material, and the second doping layer includes a N-type semiconductor material; the P-type semiconductor material includes a P-type inorganic semiconductor material, a P-type metal dopant or a P-type organic semiconductor material, and the N-type semiconductor material includes a N-type inorganic semiconductor material, a N-type metal dopant or a N-type organic semiconductor material.
1. An organic light-emitting diode, comprising:
an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, wherein:
the charge generation layer comprises a first doping layer, an intermediate layer and a second doping layer which are arranged in sequence along the direction far away from the cathode, wherein the first doping layer comprises a P-type semiconductor material, and the second doping layer comprises a N-type semiconductor material;
the P-type semiconductor material comprises a P-type inorganic semiconductor material or a P-type metal dopant, and a fermi level of a material of the intermediate layer is greater than a fermi level of the P-type semiconductor material;
the N-type semiconductor material comprises a N-type inorganic semiconductor material, and the fermi level of the material of the intermediate layer is less than a fermi level of the N-type semiconductor material;
the material of the intermediate layer includes ytterbium element, and a thickness of the intermediate layer ranges from 0.5 nm to 1.5 nm;
the fermi level of the P-type semiconductor material ranges from 1.8 eV to 3.4 eV; and
the fermi level of the N-type semiconductor material ranges from 3.5 eV to 5.5 eV.
2. The organic light-emitting diode according to claim 1 , wherein a volume concentration of the P-type semiconductor material doped in the first doping layer ranges from 3% to 35%.
3. The organic light-emitting diode according to claim 1 , wherein a volume concentration of the N-type semiconductor material doped in the second doping layer ranges from 3% to 45%.
4. The organic light-emitting diode according to claim 1 , wherein the emitting layer comprises a fluorescent emitting layer or a phosphorescent emitting layer.
5. The organic light-emitting diode according to claim 1 , wherein the number of the emitting layers is two or three.
6. A display panel, comprising an organic light-emitting diode, the organic light-emitting diode comprising an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, wherein:
the charge generation layer comprises a first doping layer, an intermediate layer and a second doping layer which are arranged in sequence along the direction far away from the cathode, wherein the first doping layer comprises a P-type semiconductor material, and the second doping layer comprises a N-type semiconductor material;
the P-type semiconductor material comprises a P-type inorganic semiconductor material or a P-type metal dopant, and a fermi level of a material of the intermediate layer is greater than a fermi level of the P-type semiconductor material;
the N-type semiconductor material comprises a N-type inorganic semiconductor material, and the fermi level of the material of the intermediate layer is less than a fermi level of the N-type semiconductor material;
the material of the intermediate layer includes ytterbium element, and a thickness of the intermediate layer ranges from 0.5 nm to 1.5 nm;
the fermi level of the P-type semiconductor material ranges from 1.8 eV to 3.4 eV; and
the fermi level of the N-type semiconductor material ranges from 3.5 eV to 5.5 eV.
7. The display panel according to claim 6 , wherein a volume concentration of the P-type semiconductor material doped in the first doping layer ranges from 3% to 35%.
8. The display panel according to claim 6 , wherein a volume concentration of the N-type semiconductor material doped in the second doping layer ranges from 3% to 45%.
9. The display panel according to claim 6 , wherein the emitting layer one or more of: a fluorescent emitting layer, and a phosphorescent emitting layer.
10. The display panel according to claim 6 , wherein the number of the emitting layers is two or three.
11. A display device, comprising:
a display panel, the display panel comprising an organic light-emitting diode, the organic light-emitting diode comprising an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, wherein:
the charge generation layer comprises a first doping layer, an intermediate layer and a second doping layer which are arranged in sequence along the direction far away from the cathode, wherein the first doping layer comprises a P-type semiconductor material, and the second doping layer comprises a N-type semiconductor material;
the P-type semiconductor material comprises a P-type inorganic semiconductor material or a P-type metal dopant, and a fermi level of a material of the intermediate layer is greater than a fermi level of the P-type semiconductor material;
the N-type semiconductor material comprises a N-type inorganic semiconductor material, and the fermi level of the material of the intermediate layer is less than a fermi level of the N-type semiconductor material;
the material of the intermediate layer includes ytterbium element, and a thickness of the intermediate layer ranges from 0.5 nm to 1.5 nm;
the fermi level of the P-type semiconductor material ranges from 1.8 eV to 3.4 eV; and
the fermi level of the N-type semiconductor material ranges from 3.5 eV to 5.5 eV.