Alkyl-alkoxysilacyclic compounds
View Patent ↗A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.
1. A composition for a vapor deposition of a dielectric film comprising a silacyclic compound having the following Formula I:
wherein R 1 is independently selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 hetero-cyclic alkyl group, a C 5 to C 10 aryl group, and a C 3 to C 10 hetero-aryl group; R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 hetero-cyclic alkyl group, a C 5 to C 10 aryl group, and a C 3 to C 10 hetero-aryl group; and R 3 is selected from a C 3 to C 10 alkyl di-radical which forms a four-membered, five-membered, or six-membered cyclic ring with the Si atom, wherein the compound is substantially free of at least one impurity selected from the group consisting of halides and water.
2. The composition of claim 1 wherein the silacyclic compound comprises at least one selected from the group consisting of 1-methyl-1-methoxy-1-silacyclopentane, 1-methyl-1-ethoxy-1-silacyclopentane, 1-methyl-1-isopropoxy-1-silacyclopentane, 1-methyl-1-propoxy-1-silacyclopentane, 1-methoxy-1-silacyclopentane, 1-ethoxy-1-silacyclopentane, 1-methyl-1-methoxy-1-silacyclobutane, 1-methyl-1-ethoxy-1-silacyclobutane, 1-methoxy-1-silacyclobutane, 1-ethoxy-1-silacyclobutane, 1-methyl-1-methoxy-1-silacyclohexane, 1-methyl-1-ethoxy-1-silacyclohexane, 1-methyl-1-methoxy-1-silacyclohexane, 1-methyl-1-ethoxy-1-silacyclohexane, 1-methyl-1-isopropoxy-1-silacyclopentane, 1-methyl-1-isopropoxy-1-silacyclobutane, 1-methyl-1-isopropoxy-1-silacyclohexane, 1-isopropoxy-1-silacyclopentane, 1-isopropoxy-1-silacyclobutane, 1-isopropoxy-1-silacyclohexane and combinations thereof.
3. The composition of claim 1 , wherein the halides comprise chloride ions.
4. The composition of claim 3 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less.
5. The composition of claim 3 , wherein the composition has 0 ppm of chloride ion.
6. The composition of claim 4 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less.
7. The composition of claim 6 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less.
8. The composition of claim 2 wherein the silacyclic compound comprises 1-methyl-1-isopropoxy-1-silacyclopentane.
9. The composition of claim 2 wherein the silacyclic compound comprises 1-methyl-1-ethoxy-1-silacyclopentane.
10. The composition of claim 8 , wherein the halides comprise chloride ions.
11. The composition of claim 10 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less.
12. The composition of claim 11 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less.
13. The composition of claim 12 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less.
14. The composition of claim 13 , wherein the composition has 0 ppm of chloride ion.