Solar cell

1. A solar cell comprising:

a semiconductor substrate;

a first conductive region positioned at a front surface of the semiconductor substrate, the first conductive region containing impurities of a first conductivity type or impurities of a second conductivity type;

an anti-reflection layer positioned on a front surface of the first conductive region;

a second conductive region positioned at a back surface of the semiconductor substrate, the second conductive region containing impurities of a conductivity type opposite a conductivity type of impurities contained in the first conductive region, and the second conductive region including a polycrystalline silicon material;

a control passivation layer positioned between the back surface of the semiconductor substrate and the second conductive region, the control passivation layer including a dielectric material;

a back passivation layer positioned on a back surface of the second conductive region;

a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region; and

a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region,

wherein each of the first and second electrodes includes silver particles and a glass frit including tellurium oxide (TeO),

wherein a thickness of the second conductive region is less than a thickness of the first conductive region,

wherein a thickness of the back passivation layer is less than a thickness of the anti-reflection layer and is greater than a thickness of the control passivation layer,

wherein crystallites formed by a combination of the silver particles of the second electrode and silicon of the second conductive region are distributed at an interface between the second electrode and the second conductive region, but not in the control passivation layer,

wherein a content of the glass frit per unit volume contained in the second electrode connected to the second conductive region having the thickness less than the thickness of the first conductive region is less than a content of the glass fit per unit volume contained in the first electrode connected to the first conductive region having the thickness greater than the thickness of the second conductive region, and

wherein the second electrode includes:

a first layer where the glass frit including tellurium oxide (TeO) is positioned at an interface between the second electrode and the second conductive region: and

a second layer where the glass frit not including tellurium oxide (TeO) is positioned on the first layer.

2. The solar cell of claim 1 , wherein the content of the glass frit per unit volume contained in the first electrode is 6 wt % to 8 wt %, and

wherein the content of the glass frit per unit volume contained in the second electrode is 2.5 wt % to 5.0 wt %.

3. The solar cell of claim 1 , wherein a content of the silver particles per unit volume contained in the first electrode is more than a content of the silver particles per unit volume contained in the second electrode.

4. The solar cell of claim 3 , wherein the content of the silver particles per unit volume contained in the first electrode is 82 wt % to 92 wt %, and

wherein the content of the silver particles per unit volume contained in the second electrode is 68 wt % to 73 wt %.

5. The solar cell of claim 1 , wherein the thickness of the anti-reflection layer is 100 nm to 140 nm, and

wherein the thickness of the back passivation layer is 65 nm to 105 nm within a range that is less than the thickness of the anti-reflection layer.

6. The solar cell of claim 1 , wherein the thickness of the control passivation layer is 0.5 nm to 10 nm.

7. The solar cell of claim 1 , wherein the thickness of the first conductive region is 300 nm to 700 nm, and wherein the thickness of the second conductive region is 290 nm to 390 nm within a range that is less than the thickness of the first conductive region.

8. The solar cell of claim 1 , wherein the glass frit of the second electrode further includes at least one of a PbO-based material or a BiO-based material.

9. The solar cell of claim 1 , wherein a melting point of the glass frit including tellurium oxide (TeO) is 200° C. to 500° C.

10. The solar cell of claim 1 , wherein the glass frit of the first electrode includes at least one of a PbO-based material and a BiO-based material.

11. The solar cell of claim 1 , wherein the silver particles of the first electrode include first silver particles having a circular shape or an oval shape and second silver particles which have a long axis and have a plate shape having an uneven surface, and

wherein the silver particles of the second electrode include the first silver particles and do not include the second silver particles.

12. The solar cell of claim 11 , wherein a length of the long axis of the second silver particle included in the first electrode is greater than a size of the first silver particle included in each of the first and second electrodes.

13. The solar cell of claim 8 , wherein the glass frit of the second electrode includes the PbO-based material.

14. The solar cell of claim 10 , wherein the glass frit of the first electrode includes the PbO-based material.

15. The solar cell of claim 1 , wherein the interface between the second electrode and the second conductive region is located between the back surface of the second conductive region and an interior of the second conductive region.

16. The solar cell of claim 1 , wherein the second layer has a thickness that is less than the thickness of the back passivation layer.