Fabrication of correlated electron material films with varying atomic or molecular concentrations of dopant species
Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.
1. A method of constructing a device, comprising:
forming, in a chamber, one or more first layers of correlated electron material (CEM) over a substrate, the one or more first layers of CEM having a first atomic concentration of a first carbon-containing dopant species; and
forming, over the one or more first layers of CEM, one or more second layers of CEM having a second atomic concentration of a second carbon-containing dopant species, the second atomic concentration of the second carbon-containing dopant species being substantially dissimilar from the first atomic concentration of the first carbon-containing dopant species.
2. The method of claim 1 , wherein the first atomic concentration of the first carbon-containing dopant species comprises approximately 0.0% to approximately 10.0%.
3. The method of claim 1 , wherein the second atomic concentration of the second carbon-containing dopant species comprises an approximately fixed value within a range of approximately 3.0% to approximately 15.0%.
4. The method of claim 3 , wherein the second atomic concentration of the second carbon-containing dopant species comprises a graded doping profile that varies within a portion of the range of approximately 3.0% to approximately 15.0%.
5. The method of claim 1 , wherein the first carbon-containing dopant species and the second carbon-containing dopant species comprise the same dopant species.
6. The method of claim 1 , wherein the first carbon-containing dopant species and the second carbon-containing dopant species comprise different molecular or atomic dopant species.
7. The method of claim 1 , wherein the first carbon-containing dopant species or the second carbon-containing dopant species comprise elemental carbon, carbonyl, nitrogen, ammonia, chlorine, fluorine, bromine, sulfur, iodine, nitric oxide, nitrous oxide, cyanide, hydroxyl or a species of form C x H y O z N a wherein x, y, z, a>0 and wherein one or more of the set {x, y, z, a} is >0 to correspond to molecules formed from one or more of: C, H, O, N.
8. The method of claim 1 , wherein forming the one or more second layers of CEM comprises forming a submonolayer of CEM.
9. The method of claim 8 , wherein the submonolayer of CEM comprises CO molecules and NiO molecules.
10. The method of claim 9 , wherein a ratio of NiO molecules to CO molecules is approximately 1.0:1.0.
11. The method of claim 9 , wherein a ratio of NiO molecules to CO molecules is approximately 2.0:1.0.
12. The method of claim 1 , further comprising:
annealing the one or more first layers of CEM or the one or more second layers of CEM in a chamber.
13. The method of claim 12 , wherein annealing the one or more first layers of CEM or the one or more second layers of CEM in the chamber further comprises heating the chamber to a temperature approximately in the range of 20.0 C° to 1000.0 C°.
14. The method of claim 12 , wherein annealing the one or more first layers of CEM or the one or more second layers of CEM in the chamber further comprises heating the chamber to a temperature approximately in the range of 100.0 C° to 800.0 C°.
15. The method of claim 12 , wherein annealing the one or more first layers of CEM or the one or more second layers of CEM in the chamber further comprises annealing the one or more first layers of CEM or the one or more second layers of CEM while the chamber is maintained at a temperature within a temperature range for a duration approximately in a range of 1.0 seconds to 5.0 hours.
16. The method of claim 12 , wherein annealing the one or more first layers of CEM or the one or more second layers of CEM in the chamber further comprises annealing the one or more first layers of CEM or the one or more second layers of CEM while the chamber is maintained at a temperature within a temperature range for a duration approximately in a range of 0.5 minutes to 180.0 minutes.
17. A method of constructing a device, comprising:
forming, in a chamber, one or more first layers of correlated electron material (CEM) over a substrate, forming the one or more first layers of CEM comprising varying a first atomic concentration of a first carbon-containing dopant species in the one or more first layers of CEM between boundaries of the one or more first layers of CEM according to a gradient; and
forming, over the one or more first layers of CEM, one or more second layers of CEM, forming the one or more second layers of CEM comprising a maintaining a fixed second atomic concentration of a second carbon-containing species in the one or more second layers of CEM between boundaries of the one or more second layers of CEM.
18. A method of constructing a device, comprising:
forming, in a chamber, one or more first layers of correlated electron material (CEM) over a substrate, forming the one or more first layers of CEM comprising a maintaining a fixed first atomic concentration of a first carbon-containing species in the one or more first layers of CEM between boundaries of the one or more first layers of CEM and
forming, over the one or more first layers of CEM, one or more second layers of CEM, forming the one or more second layers of CEM comprising varying a first atomic concentration of a second carbon-containing dopant species in the one or more second layers of CEM between boundaries of the one or more second layers of CEM according to a gradient.