Ultrasonic transducer
View Patent ↗An ultrasonic transducer may include a piezoelectric wafer and backing layers. The backing layers may include a high impedance backing layer and a low impedance backing layer. The back surface of the piezoelectric wafer may be connected with the front surface of the high impedance backing layer, and the back surface of the high impedance backing layer may be connected with the front surface of the low impedance backing layer.
1. An ultrasonic transducer, comprising a matching layer, a piezoelectric crystal and a backing layer, wherein a back surface of the matching layer is connected with a front surface of the piezoelectric crystal, the backing layer comprises a high impedance backing layer and a low impedance backing layer, a back surface of the piezoelectric crystal is connected with a front surface of the high impedance backing layer, and a back surface of the high impedance backing layer is connected with a front surface of the low impedance backing layer, and wherein the high impedance backing layer has non-constant thicknesses;
wherein the piezoelectric crystal has a constant thickness, and both the front surface and the back surface of the piezoelectric crystal are flat surfaces;
the matching layer has non-constant thicknesses, wherein the back surface of the matching layer is a flat surface, and a front surface of the matching layer is a curved concave surface.
2. The ultrasonic transducer of claim 1 , wherein a thickness at a middle of the high impedance backing layer is smaller than thicknesses at both sides of the high impedance backing layer.
3. The ultrasonic transducer of claim 2 , wherein the back surface of the high impedance backing layer is a curved concave surface or a trapezoidal concave surface.
4. The ultrasonic transducer of claim 2 , wherein the front surface of the high impedance backing layer is a flat surface.
5. The ultrasonic transducer of claim 2 , wherein the back surface of the high impedance backing layer is a wedge-shaped concave surface.
6. The ultrasonic transducer of claim 1 , wherein, a thickness at middle of the high impedance backing layer is smaller than thicknesses at both sides of the high impedance backing layer and the back surface of the high impedance backing layer is a concave surface, a thickness at middle of the low impedance backing layer is larger than thicknesses at both sides of the low impedance backing layer and the front surface of the low impedance backing layer is a convex surface, and the back surface of the high impedance backing layer matches with the front surface of the low impedance backing layer.
7. The ultrasonic transducer of claim 1 , wherein the matching layer has non-constant thicknesses, and a thickness at middle of the matching layer is smaller than thicknesses at both sides of the matching layer.
8. An ultrasonic diagnostic device, comprising an ultrasonic transducer of claim 1 .
9. An ultrasonic transducer, comprising a piezoelectric crystal and a backing layer, wherein the backing layer comprises a high impedance backing layer and a low impedance backing layer, a back surface of the piezoelectric crystal is connected with a front surface of the high impedance backing layer, and a back surface of the high impedance backing layer is connected with a front surface of the low impedance backing layer, and wherein the high impedance backing layer has non-constant thicknesses;
wherein the piezoelectric crystal is used for generating ultrasonic waves; a portion of the ultrasonic waves are transmitted to the backing layer, and said portion of the ultrasonic waves transmitted to the backing layer are reflected back towards the piezoelectric crystal by an interface between the high impedance backing layer and the low impedance backing layer; and
wherein the piezoelectric crystal has a constant thickness, the high impedance backing layer has a minimum thickness at its center and a maximum thickness at its side, wherein a ratio between (the maximum thickness+the constant thickness) and (the minimum thickness+the constant thickness) is at least 200%.
10. The ultrasonic transducer of claim 9 , wherein a thickness at a middle of the high impedance backing layer is smaller than thicknesses at both sides of the high impedance backing layer.
11. The ultrasonic transducer of claim 10 , wherein the back surface of the high impedance backing layer is a wedge-shaped concave surface.
12. The ultrasonic transducer of claim 9 , wherein a thickness at middle of the high impedance backing layer is smaller than thicknesses at both sides of the high impedance backing layer and the back surface of the high impedance backing layer is a concave surface, a thickness at middle of the low impedance backing layer is larger than thicknesses at both sides of the low impedance backing layer and the front surface of the low impedance backing layer is a convex surface, and the back surface of the high impedance backing layer matches with the front surface of the low impedance backing layer.
13. The ultrasonic transducer of claim 9 , further comprising a matching layer, wherein a back surface of the matching layer is connected with a front surface of the piezoelectric crystal.
14. The ultrasonic transducer of claim 13 , wherein, the matching layer has non-constant thicknesses, and a thickness at middle of the matching layer is smaller than thicknesses at both sides of the matching layer.
15. An ultrasonic transducer comprising a piezoelectric crystal and a backing layer, wherein the backing layer comprises a high impedance backing layer and a low impedance backing layer, a back surface of the piezoelectric crystal is connected with a front surface of the high impedance backing layer, and a back surface of the high impedance backing layer is connected with a front surface of the low impedance backing layer, and wherein the high impedance backing layer has non-constant thicknesses;
wherein an acoustic impedance of the high impedance backing layer is at least 30 times of an acoustic impedance of the low impedance backing layer; and
wherein the piezoelectric crystal is configured for generating ultrasonic waves; a portion of the ultrasonic waves are transmitted to the backing layer, and said portion of the ultrasonic waves transmitted to the backing layer are reflected back towards the piezoelectric crystal by an interface between the high impedance backing layer and the low impedance backing layer.
16. The ultrasonic transducer of claim 15 , wherein both the piezoelectric crystal and the high impedance backing layer have non-constant thickness.
17. The ultrasonic transducer of claim 16 , wherein a thickness at middle of the piezoelectric crystal is smaller than thicknesses at both sides of the piezoelectric crystal, and a thickness at middle of the high impedance backing layer is smaller than thicknesses at both sides of the high impedance backing layer.
18. The ultrasonic transducer of claim 17 , wherein a front surface of the piezoelectric crystal is a concave surface, the back surface of the piezoelectric crystal is a flat surface, the front surface of the high impedance backing layer is a flat surface, and the back surface of the high impedance backing layer is a curved concave surface, a wedge-shaped concave surface or a trapezoidal concave surface.