IP Library Granted Patent US 10,236,402
Granted Patent B2
US 10,236,402 · App. 15/896,180 · Granted Mar 19, 2019

Methods of hermetically sealing photovoltaic modules

Inventor: Markus Eberhard Beck (Scotts Valley, CA)
Assignee: SIVA POWER, INC.
H01L31/0488H01G9/2077H01L31/0201H01L31/028H01L31/0296H01L31/0304H01L31/0322H01L31/0326H01L31/048H01L31/0445H01L31/068H01L31/075H01L31/18H01L31/186H01G9/2031H01L51/448Y02E10/542Y02P70/521
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Quick Facts
Patent No.
US 10,236,402
App. No.
15/896,180
Granted
Mar 19, 2019
Kind
B2
Abstract

In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet, and a second glass sheet, a gap being defined between the first and second glass sheets, disposing a glass powder within the gap, and heating the powder to seal the glass sheets.

Claims (45)

1. A photovoltaic module comprising:

a first glass sheet;

a photovoltaic device disposed on the first glass sheet;

a second glass sheet disposed over the photovoltaic device, the first glass sheet and the second glass sheet thereby defining a gap at least a portion of which is spanned by the photovoltaic device;

a layer of melted glass powder sealing the gap between the first and second glass sheets at an edge region thereof, the layer of melted glass powder consisting essentially of glass and being free of glass frit, frit material, organic fillers, binders, and solvents; and

a plurality of conductive bus ribbons electrically coupled to the photovoltaic device and extending out from the first and second glass sheets through the sealed edge region,

wherein (i) at the sealed edge region, each of the conductive bus ribbons is disposed in direct mechanical contact with both the first and second glass sheets, and (ii) the plurality of conductive bus ribbons that are each electrically coupled to the photovoltaic device and extend out through the sealed edge region are the only conductive bus ribbons disposed between the first and second glass sheets that extend out through the sealed edge region.

2. The photovoltaic module of claim 1 , wherein the photovoltaic device is a thin-film photovoltaic device comprising CdTe, chalcopyrite (Cu(In,Ga)(S,Se) 2 ), or kesterite (Cu 2 (Zn,Fe)Sn(S,Se) 4 ).

3. The photovoltaic module of claim 1 , wherein the photovoltaic device comprises at least one of silicon, GaAs, or solid-state dye-sensitized perovskite material.

4. The photovoltaic module of claim 1 , wherein the layer of melted glass powder is free of glass solder, lead, and melting-point reduction agents.

5. The photovoltaic module of claim 1 , wherein the photovoltaic device is in direct mechanical contact with the first glass sheet or the second glass sheet but not both of the first and second glass sheets.

6. The photovoltaic module of claim 1 , wherein:

the photovoltaic device comprises one or more active regions each comprising one or more p-n or p-i-n junctions.

7. The photovoltaic module of claim 6 , wherein the photovoltaic device comprises (i) a first substrate layer disposed between each active region and the first glass sheet, (ii) a second substrate layer disposed between each active region and the second glass sheet, or (iii) a first substrate layer disposed between each active region and the first glass sheet and a second substrate layer disposed between each active region and the second glass sheet.

8. The photovoltaic module of claim 7 , wherein (i) the first substrate layer comprises a metal foil or a polymer layer, (ii) the second substrate layer comprises a metal foil or a polymer layer, or (iii) both the first and second substrate layers comprise a metal foil or a polymer layer.

9. A photovoltaic module comprising:

a first glass sheet;

a photovoltaic device disposed on the first glass sheet;

a second glass sheet disposed over the photovoltaic device, the first glass sheet and the second glass sheet thereby defining a gap at least a portion of which is spanned by the photovoltaic device; and

a layer of melted glass powder sealing the gap between the first and second glass sheets at an edge region thereof, the layer of melted glass powder consisting essentially of glass and being free of glass frit, frit material, organic fillers, binders, and solvents,

wherein a composition of the powder is the same as a composition of the first glass sheet and/or a composition of the second glass sheet.

10. The photovoltaic module of claim 9 , further comprising a conductive bus ribbon electrically coupled to the photovoltaic device and extending out from the first and second glass sheets through the sealed edge region.

11. The photovoltaic module of claim 9 , wherein the photovoltaic device is a thin-film photovoltaic device comprising CdTe, chalcopyrite (Cu(In,Ga)(S,Se) 2 ), or kesterite (Cu 2 (Zn,Fe)Sn(S,Se) 4 ).

12. The photovoltaic module of claim 9 , wherein the photovoltaic device comprises at least one of silicon, GaAs, or solid-state dye-sensitized perovskite material.

13. The photovoltaic module of claim 9 , wherein the layer of melted glass powder is free of glass solder, lead, and melting-point reduction agents.

14. The photovoltaic module of claim 9 , wherein the photovoltaic device is in direct mechanical contact with the first glass sheet or the second glass sheet but not both of the first and second glass sheets.

15. The photovoltaic module of claim 9 , wherein:

the photovoltaic device comprises an active region comprising one or more p-n or p-i-n junctions; and

the photovoltaic device comprises (i) a first substrate layer disposed between the active region and the first glass sheet, (ii) a second substrate layer disposed between the active region and the second glass sheet, or (iii) a first substrate layer disposed between the active region and the first glass sheet and a second substrate layer disposed between the active region and the second glass sheet.

16. The photovoltaic module of claim 15 , wherein (i) the photovoltaic device comprises the first substrate layer and the second substrate layer, and (ii) both the first and second substrate layers comprise a polymer layer.

17. A photovoltaic module comprising:

a first glass sheet;

a photovoltaic device disposed on the first glass sheet;

a second glass sheet disposed over the photovoltaic device, the first glass sheet and the second glass sheet thereby defining a gap at least a portion of which is spanned by the photovoltaic device;

a layer of melted glass powder sealing the gap between the first and second glass sheets at an edge region thereof, the layer of melted glass powder consisting essentially of glass and being free of glass frit, frit material, organic fillers, binders, and solvents; and

a conductive bus ribbon electrically coupled to the photovoltaic device and extending out from the first and second glass sheets through the sealed edge region, the conductive bus ribbon (i) extending into the sealed edge region at a first surface of the sealed edge region facing the photovoltaic device and (ii) extending out of the sealed edge region at a second surface of the sealed edge region opposite the first surface and facing away from the photovoltaic device,

wherein, at the sealed edge region, the conductive bus ribbon is disposed in contact with the layer of melted glass powder, but not with the first or second glass sheets.

18. The photovoltaic module of claim 17 , wherein the photovoltaic device is a thin-film photovoltaic device comprising CdTe, chalcopyrite (Cu(In,Ga)(S,Se) 2 ), or kesterite (Cu 2 (Zn,Fe)Sn(S,Se) 4 ).

19. The photovoltaic module of claim 17 , wherein the photovoltaic device comprises at least one of silicon, GaAs, or solid-state dye-sensitized perovskite material.

20. The photovoltaic module of claim 17 , wherein the layer of melted glass powder is free of glass solder, lead, and melting-point reduction agents.

21. The photovoltaic module of claim 17 , wherein the photovoltaic device is in direct mechanical contact with the first glass sheet or the second glass sheet but not both of the first and second glass sheets.

22. The photovoltaic module of claim 17 , wherein:

the photovoltaic device comprises an active region comprising one or more p-n or p-i-n junctions; and

the photovoltaic device comprises (i) a first substrate layer disposed between the active region and the first glass sheet, (ii) a second substrate layer disposed between the active region and the second glass sheet, or (iii) a first substrate layer disposed between the active region and the first glass sheet and a second substrate layer disposed between the active region and the second glass sheet.

23. The photovoltaic module of claim 22 , wherein (i) the photovoltaic device comprises the first substrate layer and the second substrate layer, and (ii) both the first and second substrate layers comprise a polymer layer.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Feb 13, 2026
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 074858/0364 →
SECURITY INTEREST Recorded Jul 10, 2023
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 064237/0462 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2020
From: SIVA POWER INC.
To: FIRST SOLAR, INC.
Reel/Frame 052197/0293 →
Continuity (4)
Continuation 14986983 · Jan 4, 2016
Continuation 14457922 · Aug 12, 2014
Provisional Application 61868203 · Aug 21, 2013
Related Publication 20180175226A1 · Jun 21, 2018
Cited By (1)
US 12,274,109