IP Library Granted Patent US 10,237,975
Granted Patent B2
US 10,237,975 · App. 15/898,413 · Granted Mar 19, 2019

Method of making transparent conductive electrodes comprising merged metal nanowires

Inventor: Hakfei Poon (Mountain View, CA)
Assignee: NUOVO FILM INC.
H05K1/092B05D1/12B05D3/0254B05D5/12G02F2201/12G02F2202/36G02F2203/01H01L31/022466H01L31/1884H05K1/0306H05K2201/0108H05K2201/026
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Quick Facts
Patent No.
US 10,237,975
App. No.
15/898,413
Granted
Mar 19, 2019
Kind
B2
Abstract

Transparent conductive electrodes comprising merged metal nanowires and the method of making the same are disclosed. The merged nanowire junctions have junction depth (J12) less than the combination of the diameters (d1, d2) of the individual metal nanowires.

Claims (17)

1. A method of making a transparent conductive electrode, comprising:

providing a substrate;

forming a substantial single layer comprising a metal nanowire network which comprises a plurality of intersection points on the substrate; and

forming metal nanowire junctions using a liquid phase sintering process,

wherein forming a substantial single layer comprising a metal nanowire network which comprises a plurality of intersection points on the substrate comprises:

preparing an ink solution comprising metal nanowires in a first solvent,

applying the ink solution onto the substrate to form a coated film,

before the removal of the solvent in the coated film, placing the coated film in an acid environment and then in a basic environment, and

annealing the coated film at a temperature between 80° C. and 150° C.

2. The method according to claim 1 , wherein the liquid phase sintering process is performed on two or more nanowires of the metal nanowire network at the cylindrical curvature.

3. The method according to claim 1 , wherein forming metal nanowire junctions using a liquid phase sintering process comprises:

placing the substantial single layer under an atmosphere saturate with a second solvent,

controlling a continuous dissolving and re-precipitation process of the metal nanowire at the cross point, and

drying the substantial single layer to form a conductive film.

4. The method according to claim 1 , wherein forming metal nanowire junctions using a liquid phase sintering process comprises:

forming merged metal nanowire junctions by reducing the evaporation rate of the first solvent at a first temperature, and

annealing the film having the merged metal nanowire junctions at a second temperature.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2019
From: NUOVO FILM INC.
To: NUOVO FILM SUZHOU CHINA INC.
Reel/Frame 051448/0865 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2018
From: POON, HAKFEI
To: NUOVO FILM INC.
Reel/Frame 044962/0133 →
Continuity (2)
Continuation 14360896
Related Publication 20180177048A1 · Jun 21, 2018