Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction
A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.
1. A method for fabricating a single crystal electronic device, the method comprising:
providing a substrate having a substrate surface region;
forming a nucleation layer overlying the substrate surface region;
forming a first single crystal piezoelectric layer overlying the nucleation layer;
forming a first strained single crystal piezoelectric layer having a first strain condition with additional strain by doping the first single crystal piezoelectric layer with one or more impurity species including scandium (Sc) such that the first strain condition of the first strained single crystal piezoelectric layer has additional strain, when compared to the first single crystal piezoelectric layer, the additional strain of the first strain condition having a crystallographic direction;
forming a second single crystal piezoelectric layer having a second crystal lattice overlying the first single crystal piezoelectric layer; and
forming a second strained single crystal piezoelectric layer having a second strain condition with additional strain by doping the second single crystal piezoelectric layer with one or more impurity species including scandium (Sc) such that the second strain condition has additional strain, when compared to the second single crystal piezoelectric layer, the additional strain of the second strain condition having a crystallographic direction; wherein,
forming the first strained single crystal piezoelectric layer and forming the second strained single crystal piezoelectric layer includes forming the first and second strained single crystal piezoelectric layers adjacent to each other, defining a strained single crystal piezoelectric bi-layer interface region, with the additional strain of the first strain condition and the additional strain of the second strain condition aligned in the same crystallographic direction at the interface region of the strained single crystal piezoelectric bi-layer such that at the interface region of the strained single crystal piezoelectric bi-layer has enhanced strain.
2. The method of claim 1 wherein the substrate is selected from one of a silicon substrate, a sapphire substrate, silicon carbide substrate, a GaN bulk substrate, a GaN template, an AlN bulk, an AlN template, Al x Ga 1-x N templates, engineered substrates such as silicon on insulator (SOI), and polycrystalline AlN templates.
3. The method of claim 1 wherein forming the first and second single crystal piezoelectric layers includes epitaxially growing the first and second single crystal piezoelectric layers using an epitaxial growth process selected from one of a metal-organic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, a hydride vapor phase epitaxy (HVPE) process, an atomic layer deposition (ALD) process, a pulsed laser deposition process, and a plasma enhanced ALD process.
4. The method of claim 1 wherein the nucleation layer and the first and second strained single crystal piezoelectric layers include materials or alloys having at least one of AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, and BN.
5. The method of claim 1 wherein the nucleation layer is defined by one or more nucleation growth parameters including temperature, pressure, thickness, growth rate, and gas phase ratio of reactant species; and wherein the first and second piezoelectric layers are defined by one or more first and second piezoelectric layer parameters including acoustic velocity, growth temperature, growth pressure, layer thickness, growth rate, gas phase ratio, the nucleation growth parameters used to form the nucleation layer, and the nucleation growth parameters used to form a nucleation layer including one or more transition layers.
6. The method of claim 1 wherein forming the first and second strained single crystal piezoelectric layers includes using an epitaxial growth process configured by the nucleation growth parameters and the first and second single crystal piezoelectric layer parameters to modulate the first and second strain conditions in the first and second strained single crystal piezoelectric layers, respectively, to improve one or more piezoelectric properties of the first and second strained single crystal piezoelectric layers.
7. The method of claim 1 wherein doping one or both of the first and second single crystal piezoelectric layers with the one or more impurity species occurs post-growth (ex-situ) after formation of one or both of the first and second single crystal piezoelectric layers; and wherein the one or more impurity species has an impurity concentration ranging from 1E+10 to 1E+21 per cubic centimeter.
8. The method of claim 1 wherein doping one or both of the first and second single crystal piezoelectric layers includes using a gas source to directly deliver the one or more impurity species or using an organometallic source to derive the source gas to deliver the one or more impurity species.
9. The method of claim 1 , wherein forming the second strained single crystal piezoelectric layer having the second strain condition with additional strain by doping the second single crystal piezoelectric layer with one or more impurity species including scandium (Sc) occurs in-situ during the formation of the second single crystal piezoelectric layer having the second crystal lattice overlying the first single crystal piezoelectric layer.
10. The method of claim 1 , wherein forming the first strained single crystal piezoelectric layer having the first strain condition with additional strain by doping the first single crystal piezoelectric layer with one or more impurity species including scandium (Sc) occurs in-situ during the formation of the first single crystal piezoelectric layer having the first crystal lattice overlying the nucleation layer.
11. The method of claim 10 , wherein forming the second strained single crystal piezoelectric layer having the second strain condition with additional strain by doping the second single crystal piezoelectric layer with one or more impurity species including scandium (Sc) occurs in-situ during the formation of the second single crystal piezoelectric layer having the second crystal lattice overlying the first single crystal piezoelectric layer.
12. The method of claim 1 , further comprising:
forming multiple strained single crystal piezoelectric bi-layers having enhanced strain interface regions between additional strained single crystal piezoelectric layers by:
forming two additional strained single crystal piezoelectric layers each having strain conditions with additional strain, when compared to corresponding single crystal piezoelectric layers, adjacent to each other and defining an additional strained single crystal piezoelectric bi-layer interface region by doping additional single crystal piezoelectric layers with one or more impurity species with the additional strains of the additional strain conditions aligned in the same crystallographic direction at the interface regions of the strained single crystal piezoelectric bi-layer such that the additional strained single crystal piezoelectric bi-layer has enhanced strain at the interface region.
13. The method of claim 12 , wherein doping the additional single crystal piezoelectric layers with one or more impurity species includes doping the additional single crystal piezoelectric layers with one or more impurity species including silicon (Si), magnesium (Mg), carbon (C), oxygen (O), erbium (Er), rubidium (Rb), strontium (Sr), scandium (Sc), beryllium (Be), molybdenum (Mo), zirconium (Zr), Hafnium (Hf), or vanadium (Va).
14. A method for fabricating a single crystal electronic device, the method comprising:
providing a substrate having a substrate surface region;
forming a nucleation layer overlying the substrate surface region;
forming a first single crystal piezoelectric layer overlying the nucleation layer;
forming a first strained single crystal piezoelectric layer having a first strain condition with additional strain by doping the first single crystal piezoelectric layer with one or more impurity species including scandium (Sc) such that the first strain condition of the first strained single crystal piezoelectric layer has additional strain when compared to the first single crystal piezoelectric layer, the first strain condition having a crystallographic direction;
forming a second single crystal piezoelectric layer overlying the first single crystal piezoelectric layer;
forming a second strained single crystal piezoelectric layer having a second strain condition with additional strain by doping the second single crystal piezoelectric layer with one or more impurity species including scandium (Sc) such that the second strain condition has additional strain when compared to the second single crystal piezoelectric layer, the second strain condition having another crystallographic direction; and
forming a strained single crystal piezoelectric bi-layer having an enhanced strain interface region including:
producing an interface region of the strained single crystal piezoelectric bi-layer by forming the first strained single crystal piezoelectric layer and the second strained single crystal piezoelectric layer adjacent to each other; and
enhancing the strain at the interface region of the strained single crystal piezoelectric bi-layer by aligning the additional strain of the first strain condition of the first strained single crystal piezoelectric layer and the additional strain of the second strain condition of the second strained single crystal piezoelectric layer in the same crystallographic direction at the interface region of the strained single crystal piezoelectric bi-layer.
15. The method of claim 14 wherein the substrate is selected from one of a silicon substrate, a sapphire substrate, silicon carbide substrate, a GaN bulk substrate, a GaN template, an AlN bulk, an AlN template, Al x Ga 1-x N templates, engineered substrates such as silicon on insulator (SOI), and polycrystalline AlN templates.
16. The method of claim 14 wherein forming the first and second single crystal piezoelectric layers includes epitaxially growing the first and second single crystal piezoelectric layers using an epitaxial growth process selected from one of a metal-organic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, a hydride vapor phase epitaxy (HVPE) process, an atomic layer deposition (ALD) process, a pulsed laser deposition process, and a plasma enhanced ALD process.
17. The method of claim 14 wherein the nucleation layer and the first and second strained single crystal piezoelectric layers include materials or alloys comprising at least one of AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, and BN.
18. The method of claim 14 wherein the nucleation layer is defined by one or more nucleation growth parameters including temperature, pressure, thickness, growth rate, and gas phase ratio of reactant species; and wherein the first and second piezoelectric layers are defined by one or more first and second piezoelectric layer parameters including acoustic velocity, growth temperature, growth pressure, layer thickness, growth rate, gas phase ratio, the nucleation growth parameters used to form the nucleation layer, and the nucleation growth parameters used to form a nucleation layer including one or more transition layers.
19. The method of claim 14 wherein forming the first and second strained single crystal piezoelectric layers includes using an epitaxial growth process configured by the nucleation growth parameters and the first and second single crystal piezoelectric layer parameters to modulate the first and second strain conditions in the first and second strained single crystal piezoelectric layers, respectively, to improve one or more piezoelectric properties of the first and second strained single crystal piezoelectric layers.
20. The method of claim 14 wherein doping one or both of the first and second single crystal piezoelectric layers with the one or more impurity species occurs post-growth (ex-situ) after formation of one or both of the first and second single crystal piezoelectric layers.
21. The method of claim 14 wherein doping one or both of the first and second single crystal piezoelectric layers includes using a gas source to directly deliver the one or more impurity species or using an organometallic source to derive the source gas to deliver the one or more impurity species.
22. The method of claim 14 , wherein forming the second strained single crystal piezoelectric layer having the second strain condition with additional strain by doping the second single crystal piezoelectric layer with one or more impurity species including scandium (Sc) occurs in-situ during the formation of the second single crystal piezoelectric layer having the second crystal lattice overlying the first single crystal piezoelectric layer.
23. The method of claim 14 , wherein forming the first strained single crystal piezoelectric layer having the first strain condition with additional strain by doping the first single crystal piezoelectric layer with one or more impurity species including scandium (Sc) occurs in-situ during the formation of the first single crystal piezoelectric layer having the first crystal lattice overlying the nucleation layer.
24. The method of claim 23 , wherein forming the second strained single crystal piezoelectric layer having the second strain condition with additional strain by doping the second single crystal piezoelectric layer with one or more impurity species including scandium (Sc) occurs in-situ during the formation of the second single crystal piezoelectric layer having the second crystal lattice overlying the first single crystal piezoelectric layer.
25. The method of claim 14 , further comprising:
forming multiple strained single crystal piezoelectric bi-layers having enhanced strain interface regions between additional strained single crystal piezoelectric layers by:
forming additional strained single crystal piezoelectric layers having strain conditions with additional strain adjacent to each other, producing additional strained single crystal piezoelectric bi-layer interface regions, by doping the additional single crystal piezoelectric layers with one or more impurity species such that each of the strain conditions of the additional single crystal piezoelectric layers has additional strain, when compared to a corresponding one of the additional single crystal piezoelectric layers: and
aligning the additional strain conditions of the additional strained single crystal piezoelectric layers, the additional strain conditions each having a crystallographic direction, in the same crystallographic direction at the interface region of the additional single crystal piezoelectric bi-layers.
26. The method of claim 25 , wherein doping the additional single crystal piezoelectric layers with one or more impurity species includes doping the additional single crystal piezoelectric layers with one or more impurity species including silicon (Si), magnesium (Mg), carbon (C), oxygen (O), erbium (Er), rubidium (Rb), strontium (Sr), scandium (Sc), beryllium (Be), molybdenum (Mo), zirconium (Zr), Hafnium (Hf), or vanadium (Va).