Spin valve with bias alignment
View Patent ↗A magnetoresistance element (e.g. a spin valve) for detecting a changing magnetic field includes a pinning layer, pinned layer adjacent to the pinning layer, a spacer layer adjacent to the pinned layer, and a free layer adjacent to the spacer layer and arranged so that the spacer layer is between the pinned layer and the free layer. The pinned layer has a bias with a bias direction configured to reduce an effect of a static field on the detection of the changing magnetic field.
1. A magnetoresistance element for detecting a changing magnetic field in an environment having a static magnetic field having a magnitude and a direction, the magnetoresistance element comprising:
a first double-pinned spin valve comprising:
a first pinning layer;
a first pinned layer adjacent to the first pinning layer;
a first spacer layer adjacent to the first pinned layer;
a free layer adjacent to the first spacer layer and arranged so that the first spacer layer is between the first pinned layer and the free layer;
a second pinning layer;
a second pinned layer adjacent to the second pinning layer;
a second spacer layer adjacent to the second pinned layer and the free layer; and
a second double-pinned spin valve, wherein the second pinning layer is a shared layer between the first double-pinned spin valve and the second double-pinned spin valve,
wherein the first spin valve has a bias with a magnitude and a direction, and
wherein the static magnetic field is generated external to the magnetoresistance element,
wherein the static magnetic field is defined by a first magnetic vector, the bias of the first spin valve is defined by a second magnetic vector, and a bias of the second double-pinned spin valve is defined by a third magnetic vector, and wherein a sum of the first and second magnetic vectors results in a first effective bias vector associated with the first double-pinned spin valve and a sum of the first and third magnetic vectors results in a second effective bias vector associated with the second double-pinned spin valve.
2. The magnetoresistance element of claim 1 wherein the first and second effective bias vectors have substantially opposite directions.
3. The magnetoresistance element of claim 1 wherein a direction of the first effective bias vector is substantially opposite to a direction of the first magnetic vector of the static magnetic field and a direction of the second bias vector is substantially the same as the direction of the first magnetic vector of the static magnetic field.
4. The magnetoresistance element of claim 1 wherein an axis of maximum sensitivity of the magnetoresistance element is positioned to detect the changing magnetic field.
5. The magnetoresistance element of claim 1 wherein the free layer comprises a ferromagnetic layer.