Semiconductor device
Provided is a Hall element which is reduced in asymmetrically generated offset voltage. A semiconductor device includes: a semiconductor layer of a first conductivity type having a Hall element forming region; an element isolation region of the first conductivity type having a concentration higher than a concentration of the semiconductor layer, the element isolation region being formed so as to surround the Hall element forming region; and a Hall element formed in the Hall element forming region and comprising a magnetism sensing portion of a second conductivity type which is higher in concentration than the semiconductor layer and which is kept apart from the element isolation region through the semiconductor layer.
1. A semiconductor device, comprising:
a semiconductor layer of a first conductivity type having a Hall element region therein;
an element isolation region having an impurity concentration of the first conductivity type that is higher than an impurity concentration of the first conductivity type of the semiconductor layer, the element isolation region surrounding the Hall element region; and
a Hall element in the Hall element region and comprising a magnetism sensing portion having an impurity concentration of a second conductivity type that is higher than the impurity concentration of the first conductivity type of the semiconductor layer and spaced apart from the element isolation region by the semiconductor layer, wherein the element isolation region is in contact with the semiconductor layer and has a greater depth in the semiconductor layer than that of the magnetism sensing portion.
2. The semiconductor device according to claim 1 , further comprising electrodes having an impurity concentration of the second conductivity type that higher than the impurity concentration of the second conductivity type of the magnetism sensing portion and on a surface of the magnetism sensing portion, the electrodes at a predetermined distance from edge portions of the magnetism sensing portion.
3. The semiconductor device according to claim 2 , wherein the semiconductor layer comprises an epitaxial layer.
4. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises a semiconductor substrate.
5. The semiconductor device according to claim 2 , wherein the semiconductor layer comprises a semiconductor substrate.
6. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises an epitaxial layer.