Solar cell with selectively doped conductive oxide layer and method of making the same
A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively supplying an oxide precursor material and a dopant precursor material to each coating cell of a multi-cell chemical vapor deposition coater, wherein the amount of dopant material supplied is selected to vary the dopant content versus coating depth in the resultant coating.
1. A solar cell comprising
a first substrate having a first surface and a second surface;
a first conductive layer over at least a portion of the second surface, the first conductive layer comprising zinc stannate doped with a dopant having a non-uniform profile, wherein the first conductive layer comprises a first portion having a dopant, a second portion over the first portion having an amount of dopant, the amount of dopant being less than an amount of dopant in the first portion, a third portion over the second portion having more dopant than the amount of dopant in the second portion and less dopant than the first portion; a fourth portion having less dopant than the first, second, and third portion; and a fifth portion having less dopant than the first and third portions and more dopant than the second and fourth portions;
a semiconductor layer over the first conductive layer; and
a second conductive layer over at least a portion of the semiconductor layer.
2. The solar cell of claim 1 , further comprising an undercoating layer between the second surface and the first conductive layer.
3. The solar cell of claim 1 , further comprising a second substrate over the second conductive layer.
4. The solar cell of claim 1 , wherein the dopant material is selected from the group consisting of F, In, Al, P, and Sb.
5. The solar cell of claim 1 , wherein the dopant material comprises fluorine.
6. The solar cell of claim 1 , wherein the semiconductor layer is selected from monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, and copper indium selenide/sulfide.