High-speed light sensing apparatus II
An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
1. An optical apparatus comprising:
a semiconductor substrate;
a first light absorption region supported by the semiconductor substrate, the first light absorption region comprising germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons;
a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region;
one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and
one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal,
wherein the one or more first switches comprise:
a first control contact coupled to a first control region of the first layer, wherein the first control region is controlled by the first control signal; and
a first readout contact coupled to a first readout region of the first layer, wherein the first readout region is coupled to a first readout integrated circuit, and
wherein the one or more second switches comprise:
a second control contact coupled to a second control region of the first layer, wherein the second control region is controlled by the second control signal; and
a second readout contact coupled to a second readout region of the first layer, wherein the second readout region is coupled to a second readout integrated circuit.
2. The optical apparatus of claim 1 , wherein the semiconductor substrate comprises a recess, and at least a portion of the first light absorption region is embedded in the recess.
3. The optical apparatus of claim 2 , wherein the first readout region comprises a first n-doped region and the second readout region comprises a second n-doped region.
4. The optical apparatus of claim 3 , wherein:
the first readout region and the second readout region are supported by the first light absorption region, and
the first control region and the second control region are supported by the first light absorption region.
5. The optical apparatus of claim 4 , wherein the first control region comprises a first p-doped region and the second control region comprises a second p-doped region.
6. The optical apparatus of claim 5 , wherein the first light absorption region comprises:
a third n-doped region located beneath the first control region of the first layer and in contact with the first p-doped region; and
a fourth n-doped region located beneath the second control region of the first layer and in contact with the second p-doped region.
7. The optical apparatus of claim 5 , wherein the first light absorption region comprises:
a third p-doped region; and
a fourth p-doped region.
8. The optical apparatus of claim 4 , wherein the first light absorption region comprises:
a third n-doped region located beneath the first control region of the first layer; and
a fourth n-doped region located beneath the second control region of the first layer.
9. The optical apparatus of claim 3 , wherein:
the first readout region and the second readout region are supported by the semiconductor substrate, and
the first control region and the second control region are supported by the semiconductor substrate.
10. The optical apparatus of claim 9 , wherein the first control region comprises a first p-doped region and the second control region comprises a second p-doped region.
11. The optical apparatus of claim 10 , wherein the semiconductor substrate comprises:
a third n-doped region located beneath the first control region of the first layer and in contact with the first p-doped region; and
a fourth n-doped region located beneath the second control region of the first layer and in contact with the second p-doped region.
12. The optical apparatus of claim 10 , wherein the semiconductor substrate comprises:
a third p-doped region; and
a fourth p-doped region.
13. The optical apparatus of claim 9 , wherein the semiconductor substrate comprises:
a third n-doped region located beneath the first control region of the first layer; and
a fourth n-doped region located beneath the second control region of the first layer.
14. The optical apparatus of claim 10 , wherein the one or more first switches further comprise:
a third control contact coupled to a third control region of the first layer, wherein the third control region is supported by the first light absorption region and controlled by a third control signal; and
a fourth control contact coupled to a fourth control region of the first layer, wherein the fourth control region is supported by the first light absorption region and controlled by a fourth control signal.
15. The optical apparatus of claim 14 , wherein the third control region comprises a third p-doped region and the fourth control region comprises a fourth p-doped region.
16. The optical apparatus of claim 15 , wherein the semiconductor substrate comprises:
a third n-doped region located beneath the first control region of the first layer and in contact with the first p-doped region; and
a fourth n-doped region located beneath the second control region of the first layer and in contact with the second p-doped region, and
wherein the first light absorption region comprises:
a fifth n-doped region located beneath the third control region of the first layer and in contact with the third p-doped region; and
a sixth n-doped region located beneath the fourth control region of the first layer and in contact with the fourth p-doped region.
17. The optical apparatus of claim 16 , wherein the semiconductor substrate further comprises:
a fifth p-doped region; and
a sixth p-doped region.
18. The optical apparatus of claim 14 , wherein the semiconductor substrate comprises:
a third n-doped region located beneath the first control region of the first layer and in contact with the first p-doped region; and
a fourth n-doped region located beneath the second control region of the first layer and in contact with the second p-doped region, and
wherein the first light absorption region comprises:
a fifth n-doped region located beneath the third control region of the first layer; and
a sixth n-doped region located beneath the fourth control region of the first layer.
19. The optical apparatus of claim 2 , wherein the first layer is a silicon layer or a germanium-silicon layer.
20. The optical apparatus of claim 2 , wherein the first layer comprises a CMOS process-compatible material.
21. The optical apparatus of claim 2 , wherein the first light absorption region is formed from germanium or germanium-silicon.
22. The optical apparatus of claim 5 , further comprising a first bipolar junction transistor and a second bipolar junction transistor, wherein:
the first bipolar junction transistor comprises:
a first electron emitter supported by the semiconductor substrate;
the first p-doped region; and
the first n-doped region; and
the second bipolar junction transistor comprises:
a second electron emitter supported by the semiconductor substrate;
the second p-doped region; and
the second n-doped region.