IP Library Granted Patent US 10,566,514
Granted Patent B2
US 10,566,514 · App. 15/908,719 · Granted Feb 18, 2020

Thermoelectric module

Inventors: Gook Hyun Ha (Busan-si, KR); Ji Hun Yu (Busan-si, KR); Gil Gun Lee (Busan-si, KR)
Assignee: Korea Institute of Machinery & Materials
H01L35/32H01L35/34
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Quick Facts
Patent No.
US 10,566,514
App. No.
15/908,719
Granted
Feb 18, 2020
Kind
B2
Abstract

Provided is a thermoelectric module including electrodes and P-type and N-type semiconductors formed on a substrate by a printing method. The thermoelectric module includes upper and lower substrates ( 110 and 120 ) formed of ceramic or aluminum and forming upper and lower surfaces of the thermoelectric module; electrodes ( 130 ) disposed on surfaces of the upper and lower substrates ( 110 and 120 ), the electrodes being formed of an electrically conductive material for transmitting electric power; a plurality of P-type and N-type semiconductors ( 140 and 150 ) spaced between the electrodes ( 130 ), the P-type and N-type semiconductors ( 140 and 150 ) being forming by sintering a paste mixture of thermoelectric powder and an organic solvent, wherein the electrodes ( 130 ) and the P-type and N-type semiconductors ( 140 and 150 ) are formed by a printing method. With this configuration, thin thermoelectric module having various sizes and shapes can be provided.

Claims (20)

1. A method of manufacturing a thermoelectric module, the method comprising:

providing an upper substrate and a lower substrate, the upper substrate forming an upper surface of the thermoelectric module, the lower substrate forming a lower surface of the thermoelectric module;

separately forming an upper electrode on the upper substrate and a lower electrode on the lower substrate;

forming a thermoelectric powder for a P-type semiconductor and an N-type semiconductor, wherein the forming the thermoelectric powder comprises ball milling the thermoelectric powder to have a diameter not exceeding 2 μm;

separately forming the P-type semiconductor and the N-type semiconductor in the form of a paste on surfaces of the upper electrode and the lower electrode, respectively; and

bonding the upper substrate and the lower substrate together into the thermoelectric module after the separately forming the P-type semiconductor and the N-type semiconductor on the upper electrode and the lower electrode, respectively.

2. The method of claim 1 , wherein the forming of the upper electrode, the lower electrode, the P-type semiconductor, and the N-type semiconductor comprises a screen printing process.

3. The method of claim 2 , wherein the bonding comprises:

mounting the upper substrate and the lower substrate within a mold; and

heating and pressing the upper substrate and the lower substrate into the form of the thermoelectric module.

4. The method of claim 3 , further comprising:

performing a hydrogen reduction on a pulverized thermoelectric powder;

mixing the thermoelectric powder with an organic solvent to form pastes after the hydrogen reduction; and

removing the organic solvent.

5. The method of claim 3 , wherein the forming of the upper electrode and the lower electrode comprises:

forming the upper electrode on a bottom surface of the upper substrate, and

forming the lower electrode on a top surface of the lower substrate, wherein the upper electrode and lower electrode are formed at positions overlapping with each other.

6. The method of claim 1 , wherein each of the upper substrate and the lower substrate comprises a material selected from the group consisting of silver, copper, aluminum, and combinations thereof.

7. The method of claim 1 , wherein the forming of the upper electrode comprises forming the upper electrode directly connected to the upper substrate, and wherein the forming of the lower electrode comprises forming the lower electrode directly connected to the lower substrate.

8. The method of claim 1 , wherein the forming the P-type semiconductor comprises forming the P-type semiconductor directly on the surface of the upper electrode, and wherein the forming the N-type semiconductor comprises forming the N-type semiconductor directly on the surface of the lower electrode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2021
From: KOREA INSTITUTE OF MACHINERY & MATERIALS
To: KOREA INSTITUTE OF MATERIALS SCIENCE
Reel/Frame 055137/0489 →