Organic Light-Emitting Diode, Display Panel and Display Device
The disclosure discloses an organic light-emitting diode, a display panel and a display device, where organic light-emitting diode includes an anode, a cathode, at least two light emitting layers arranged between the anode and the cathode, and a hole transport element and an electron transport element which are arranged between two adjacent light emitting layers. Where both the hole transport element and the electron transport element include at least two transport layers, and the volume concentration of the P-type material of the hole transport layer adjacent to the electron transport element is higher, and the volume concentration of the N-type material of the electron transport layer adjacent to the hole transport element is higher.
1 . An organic light-emitting diode, comprising an anode, a cathode, at least two light emitting layers arranged between the anode and the cathode, and a hole transport element and an electron transport element which are arranged between two adjacent light emitting layers and arranged in sequence along a direction far away from the cathode, wherein:
the hole transport element comprises at least two hole transport layers, wherein each of the hole transport layers comprises a hole transport material and a P-type material doped in the hole transport material, and a volume concentration of the P-type material of a hole transport layer adjacent to the light emitting layer is less than a volume concentration of the P-type material of a hole transport layer adjacent to the electron transport element; and
wherein the electron transport element comprises at least two electron transport layers, wherein the electron transport layer comprises an electron transport material and an N-type material doped in the electron transport material, and a volume concentration of the N-type material of an electron transport layer adjacent to the light emitting layer is less than a volume concentration of the N-type material of an electron transport layer adjacent to the hole transport element.
2 . The organic light-emitting diode of claim 1 , wherein the volume concentrations of the P-type materials of the at least two hole transport layers increase in sequence along the direction far away from the cathode; and
the volume concentrations of the N-type materials of the at least two hole transport layers increase in sequence along a direction far away from the anode.
3 . The organic light-emitting diode of claim 1 , wherein a thickness of the hole transport layer, adjacent to the light emitting layer, in the at least two hole transport layers is greater than a thickness of remaining hole transport layers; and
a thickness of the electron transport layer, adjacent to the light emitting layer, in the at least two electron transport layers is greater than a thickness of remaining electron transport layers.
4 . The organic light-emitting diode of claim 1 , wherein the hole transport element comprises two hole transport layers, which are respectively a first hole transport layer and a second hole transport layer along the direction far away from the cathode; and
the electron transport element comprises two electron transport layers, which are respectively a first electron transport layer and a second electron transport layer along a direction far away from the anode.
5 . The organic light-emitting diode of claim 4 , wherein a thickness of the first hole transport layer is 10 nm˜120 nm, and a thickness of the second hole transport layer is 5 nm˜20 nm.
6 . The organic light-emitting diode of claim 4 , wherein a volume concentration of the P-type material of the first hole transport layer is 0.05%˜10%, and a volume concentration of the P-type material of the second hole transport layer is 1%˜30%.
7 . The organic light-emitting diode of claim 4 , wherein a thickness of the first electron transport layer is 20 nm˜60 nm, and a thickness of the second electron transport layer is 5 nm˜20 nm.
8 . The organic light-emitting diode of claim 4 , wherein a volume concentration of the N-type material of the first electron transport layer is 0.1%˜5%, and a volume concentration of the N-type material of the second electron transport layer is 1%˜30%.
9 . The organic light-emitting diode of claim 1 , wherein the N-type material comprises an alkali metal, an alkaline-earth metal or a rare-earth metal.
10 . The organic light-emitting diode of claim 1 , wherein the P-type material comprises an inorganic material, and the inorganic material comprises MoO 3 .
11 . The organic light-emitting diode of claim 1 , wherein the P-type material comprises an organic material, and the organic material comprises:
wherein R 1 to R 21 are independently selected from hydrogen atoms, deuterium atoms, alkyl, alkoxy, substituted or unsubstituted aryl; X 1 , X 2 and X 3 are independently selected from substituted or unsubstituted aryl, and a substituent in the substituted or unsubstituted aryl at least comprises one electron acceptor group.
12 . The organic light-emitting diode of claim 1 , wherein the hole transport material comprises an aromatic amine material or a carbazole material.
13 . The organic light-emitting diode of claim 1 , wherein the electron transport material comprises a biphenyl material, a pyridine material, a benzoylpyridine material or a phenanthroline material.
14 . A display panel, comprising an organic light-emitting diode, wherein the organic light-emitting diode comprises:
an anode, a cathode, at least two light emitting layers arranged between the anode and the cathode, and a hole transport element and an electron transport element which are arranged between two adjacent light emitting layers and arranged in sequence along a direction far away from the cathode, wherein:
the hole transport element comprises at least two hole transport layers, wherein each of the hole transport layers comprises a hole transport material and a P-type material doped in the hole transport material, and a volume concentration of the P-type material of a hole transport layer adjacent to the light emitting layer is less than a volume concentration of the P-type material of a hole transport layer adjacent to the electron transport element; and
wherein the electron transport element comprises at least two electron transport layers, wherein the electron transport layer comprises an electron transport material and an N-type material doped in the electron transport material, and a volume concentration of the N-type material of an electron transport layer adjacent to the light emitting layer is less than a volume concentration of the N-type material of an electron transport layer adjacent to the hole transport element.
15 . A display device, comprising the display panel of claim 14 .