Magnetoresistance element with extended linear response to magnetic fields
A magnetoresistance element assembly has two stacks of material layers with respective reference layers and respective bias layers that have relative magnetic directions that are not perpendicular to each other. Bias layers in the two stacks have bias magnetic directions that oppose each other. Linear range is increased.
1. A magnetoresistance element assembly, comprising:
a first stack of material layers disposed over a substrate, comprising:
first reference layers comprising a first reference magnetic direction;
first bias layers comprising a first bias magnetic direction; and
first free layers experiencing the first bias magnetic direction, wherein the magnetoresistance element assembly further comprises:
a second stack of material layers disposed over the substrate, comprising:
second reference layers comprising a second reference magnetic direction;
second bias layers comprising a second bias magnetic direction; and
second free layers experiencing the second bias magnetic direction,
wherein the first and second reference magnetic directions are parallel to each other, wherein a relative angle between the first reference magnetic direction and the first bias magnetic direction is between fifty and eighty-five degrees or between ninety-five and one hundred thirty degrees, wherein the second bias magnetic direction is parallel to and opposite to the first bias magnetic direction, and wherein the first bias magnetic direction and the second bias magnetic direction are each substantially parallel to a largest surface of the substrate.
2. The magnetoresistance element of claim 1 , wherein the second stack of material layers is disposed over the first stack of material layers and the first stack of material layers is disposed over the substrate.
3. The magnetoresistance element of claim 1 , wherein the second stack of material layers is disposed upon the substrate and the first stack of material layers is disposed upon the substrate to the side of the second stack of material layers.
4. The magnetoresistance element of claim 3 , wherein the first and second stacks of material layers are electrically coupled in parallel or in series.
5. The magnetoresistance element of claim 1 , wherein the first and second material stacks comprise respective GMR elements.
6. The magnetoresistance element of claim 1 , wherein the first and second material stacks comprise respective yoke shapes, each with a longest dimension and a smallest dimension perpendicular to the longest dimension.
7. The magnetoresistance element of claim 6 , wherein the first and second reference magnetic directions are substantially parallel to the smallest dimension.
8. The magnetoresistance element of claim 1 , wherein the first and second material stacks comprise respective TMR elements.
9. The magnetoresistance element of claim 1 , wherein the first reference magnetic direction and the second reference magnetic direction are each substantially parallel to the major surface of the substrate.
10. A method of forming a magnetoresistance element assembly, the method comprising:
forming a first stack of material layers disposed over a substrate, comprising:
first reference layers comprising a first reference magnetic direction;
first bias layers comprising a first bias magnetic direction; and
first free layers experiencing the first bias magnetic direction, wherein the method further comprises:
forming a second stack of material layers disposed over the substrate, comprising:
second reference layers comprising a second reference magnetic direction;
second bias layers comprising a second bias magnetic direction; and
second free layers experiencing the second bias magnetic direction,
wherein the first and second reference magnetic directions are parallel to each other, wherein a relative angle between the first reference magnetic direction and the first bias magnetic direction is between fifty and eighty-five degrees or between ninety-five and one hundred thirty degrees, wherein the second bias magnetic direction is parallel to and opposite to the first bias magnetic direction, and wherein the first bias magnetic direction and the second bias magnetic direction are each substantially parallel to a largest surface of the substrate.
11. The method of claim 10 , wherein the second stack of material layers is disposed over the first stack of material layers and the first stack of material layers is disposed upon the substrate.
12. The method of claim 11 , further comprising:
in a first annealing step, annealing the first and second stacks of material layers, resulting in the first and second reference layers having the first reference magnetic direction; and
in a second annealing step, annealing the first and second stacks of material layers, resulting in the first bias layers having the first bias magnetic direction, and resulting in the second bias layers having the second bias magnetic direction.
13. The method of claim 10 , wherein the second stack of material layers is disposed upon a substrate and the first stack of material layers is disposed upon the substrate to the side of the second stack of material layers.
14. The method of claim 13 , wherein the first and second stacks of material layers are electrically coupled in parallel or in series.
15. The method of claim 14 , further comprising:
in a first annealing step, annealing the first and second stacks of material layers, resulting in the first and second reference layers having the first reference magnetic direction;
in a second annealing step, annealing the first and second stacks of material layers, resulting in the first bias layers having the first bias magnetic direction, and resulting in the second bias layers having the first bias magnetic direction; and
in a rebiasing step, rebiasing the second stack of material layers; resulting in the second bias layers having the second bias magnetic direction.
16. The method of claim 10 , wherein the first and second material stacks each comprise a respective yoke shape with a longest dimension and a smallest dimension perpendicular to the longest dimension.
17. The method of claim 16 , wherein the first and second reference magnetic directions are substantially parallel to the smallest dimension.
18. The method of claim 10 , wherein the first reference magnetic direction and the second reference magnetic direction are each substantially parallel to the major surface of the substrate.
19. A magnetoresistance element assembly, comprising:
means for forming a first stack of material layers disposed over a substrate, comprising:
first reference layers comprising a first reference magnetic direction;
first bias layers comprising a first bias magnetic direction; and
first free layers experiencing the first bias magnetic direction, wherein the magnetoresistance element assembly further comprises:
means for forming a second stack of material layers disposed over the substrate, comprising:
second reference layers comprising a second reference magnetic direction;
second bias layers comprising a second bias magnetic direction; and
second free layers experiencing the second bias magnetic direction,
wherein the first and second reference magnetic directions are parallel to each other, wherein, a relative angle between the first reference magnetic direction and the first bias magnetic direction is between fifty and eighty-five degrees or between ninety-five and one hundred thirty degrees, wherein the second bias magnetic direction is parallel to and opposite to the first bias magnetic direction, and wherein the first bias magnetic direction and the second bias magnetic direction are each substantially parallel to a largest surface of the substrate.
20. The magnetoresistance element assembly of claim 19 , wherein the second stack of material layers is disposed over the first stack of material layers and the first stack of material layers is disposed upon the substrate.
21. The magnetoresistance element assembly of claim 20 , further comprising:
in a first annealing step, means for annealing the first and second stacks of material layers, resulting in the first and second reference layers having the first reference magnetic direction; and
in a second annealing step, means for annealing the first and second stacks of material layers, resulting in the first bias layers having the first bias magnetic direction, and resulting in the second bias layers having the second bias magnetic direction.
22. The magnetoresistance element assembly of claim 19 , wherein the second stack of material layers is disposed upon a substrate and the first stack of material layers is disposed upon the substrate to the side of the second stack of material layers.
23. The magnetoresistance element assembly of claim 22 , wherein the first and second stacks of material layers are electrically coupled in parallel or in series.
24. The magnetoresistance element assembly of claim 23 , further comprising:
in a first annealing step, means for annealing the first and second stacks of material layers, resulting in the first and second reference layers having the first reference magnetic direction;
in a second annealing step, means for annealing the first and second stacks of material layers, resulting in the first bias layers having the first bias magnetic direction, and resulting in the second bias layers having the first bias magnetic direction; and
in a rebiasing step, means for rebiasing the second stack of material layer; resulting in the second bias layers having the second bias magnetic direction.
25. The magnetoresistance element assembly of claim 19 , wherein the first and second material stacks each comprise a respective yoke shape with a longest dimension and a smallest dimension perpendicular to the longest dimension.
26. The magnetoresistance element assembly of claim 25 , wherein the first and second reference magnetic directions are substantially parallel to the smallest dimension.
27. The magnetoresistance element of claim 19 , wherein the first reference magnetic direction and the second reference magnetic direction are each substantially parallel to the major surface of the substrate.