Semiconductor devices with robust low-k sidewall spacers and method for producing the same
A method of forming a robust low-k sidewall spacer by exposing an upper portion of the spacer to a thermal and plasma treatment prior to downstream processes and resulting device are provided. Embodiments include providing a pair of gates separated by a canyon trench over a substrate, an EPI layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair; forming a masking layer in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and treating the upper portion of the low-k spacers with a thermal and plasma treatment.
1. A method comprising:
providing a pair of gates separated by a canyon trench over a substrate, an epitaxial (EPI) layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair;
forming a masking layer in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and
treating the upper portion of the low-k spacers with a thermal and plasma treatment.
2. The method according to claim 1 , further comprising providing a pair of p-type field-effect transistor (PFET) gates and a pair of n-type field-effect transistor (NFET) gates over the substrate.
3. The method according to claim 1 , comprising forming the masking layer in the bottom portion of the canyon trench until the upper portion has a height of 60 nanometer (nm) to 80 nm.
4. The method according to claim 1 , comprising forming the masking layer of a spin-on-hardmask (SOH).
5. The method according to claim 4 , comprising forming the SOH of carbon/hydrogen/oxygen (C/H/O).
6. The method according to claim 1 , comprising treating the upper portion with a decoupled plasma nitridation (DPN) treatment.
7. The method according to claim 6 , comprising treating the upper portion with the DPN treatment at a temperature of 400° C. to 500° C. for 20 seconds to 40 seconds.
8. A device comprising:
a gate dielectric layer, laterally separated, over a substrate;
a pair of gates over the gate dielectric layer, respectively;
a low-k sidewall spacer along each opposing sidewall of the pair, the low-k sidewall spacer having a thermal and plasma treated upper portion;
an epitaxial (EPI) layer between the low-k sidewall spacers; and
a capping layer over each gate of the pair.
9. The device according to claim 8 , wherein each gate of the pair comprises polysilicon (poly), amorphous carbon (a-C), or silicon germanium (SiGe).
10. The device according to claim 8 , wherein the gate dielectric layer comprises silicon oxide (SiO) and the capping layer comprises silicon nitride (SiN), silicon dioxide (SiO 2 ), titanium dioxide (TiO 2 ), titanium nitride (TiN), or aluminum oxide (Al 2 O 3 ), and wherein an upper surface of the capping layer and an upper surface of the low-k spacer are coplanar.
11. The device according to claim 8 , further comprising:
a pair of p-type field-effect transistor (PFET) gates over the gate dielectric layer, respectively; and
a pair of n-type field-effect transistor (NFET) gates over a second gate dielectric layer, laterally separated, over the substrate.
12. The device according to claim 11 , wherein the EPI layer between the low-k sidewall spacers of the PFET gates comprises silicon germanium doped with boron (SiGe:B) and the EPI layer between the low-k sidewall spacers of the NFET gates comprises silicon containing phosphorus (Si:P).
13. The device according to claim 8 , wherein the low-k sidewall spacer comprises silicon-oxygen-carbon-nitride (SiOCN), silicon oxycarbide (SiCO), or silicon borocarbonitride (SiBCN).
14. The device according to claim 8 , wherein each low-k sidewall spacer has a width of 6 nanometer (nm) to 7 nm.
15. The device according to claim 11 , wherein the upper portion of each low-k sidewall spacer comprises a height of 60 nm to 80 nm.
16. A method comprising:
providing a pair of p-type field-effect transistor (PFET) gates and a pair of n-type field-effect transistor (NFET) gates each separated by a canyon trench over a Si substrate, a first epitaxial (EPI) layer and a second EPI layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair of PFET gates and the pair of NFET gates;
forming a spin-on-hardmask (SOH) in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and
treating the upper portion with a decoupled plasma nitridation (DPN) treatment.
17. The device according to claim 16 , comprising forming the SOH in the bottom portion of the canyon trench until the upper portion has a height of 60 nanometer (nm) to 80 nm.
18. The method according to claim 16 , comprising forming the SOH of carbon/hydrogen/oxygen (C/H/O).
19. The method according to claim 16 , comprising treating the upper portion with the DPN treatment at a temperature of 400° C. to 500° C. for 20 seconds to 40 seconds.
20. The method according to claim 16 , wherein the DPN treatment further comprises:
delivering a power level of 400 watts to 2000 watts to a reaction chamber to generate a nitrogen (N) plasma,
wherein the N plasma is introduced into the reaction chamber at a flow of 50 standard cubic centimeters per minute (SCCM) to 300 SCCM to establish a pressure of 10 millitorr (mTorr) to 200 mTorr.