Gas sensor

1. A sensing device comprising:

a substrate;

a dielectric layer located on the substrate;

a heater located within the dielectric layer; and

a material for sensing a gas,

wherein the material comprises an alumina (Al 2 O 3 ) doped conductive metal oxide,

wherein the sensing device is an NO 2 sensing device,

wherein the conductive metal oxide is any one of the group consisting of tungsten oxide, zinc oxide, indium oxide, titanium oxide, chromium oxide, copper oxide and tin oxide, and

wherein an alumina doping concentration is between 1% and 10% within the conductive metal oxide.

2. The sensing device according to claim 1 , wherein the conductive metal oxide comprises a combination of the metal oxides.

3. The sensing device according to claim 1 , wherein the alumina doping concentration is between 2.6% and 3% within the conductive metal oxide.

4. The sensing device according to claim 1 , wherein a capacitance and/or a resistance of the material for sensing a gas is sensitive to a presence of a gas.

5. The sensing device according to claim 1 , wherein the heater has an interdigitated configuration.

6. The sensing device according to claim 1 ,

wherein the substrate comprises an etched portion and a substrate portion,

wherein the dielectric layer comprises a dielectric membrane,

wherein the dielectric membrane is adjacent to the etched portion of the substrate; and

wherein the heater is located within the dielectric membrane.

7. The sensing device according to claim 6 , wherein the material for sensing a gas is located in one side of the dielectric membrane.

8. A sensing array device comprising:

a two dimensional array of a plurality of sensing devices according to claim 1 .

9. The sensing array device according to claim 8 , wherein the sensing array device comprises:

at least one sensing device comprising a material for sensing a gas comprising an alumina doped metal oxide, wherein a metal oxide is a first metal oxide; and

at least one sensing device comprising a material for sensing a gas comprising an alumina doped metal oxide, wherein a metal oxide is a second metal oxide, and

wherein the first metal oxide and the second metal oxide are different metal oxides.

10. The sensing device according to claim 1 , wherein the sensing device is configured to operate at a temperature of approximately 200° C.

11. The sensing device according to claim 1 , further comprising an electrode underneath the material for sensing gas.

12. The sensing device according to claim 11 , wherein the electrode is configured to measure a resistance and/or a capacitance of the material for sensing gas.

13. The sensing device according to claim 1 , wherein the sensing device is a CMOS based micro-hotplate in which the heater comprises a CMOS interconnect metal and the dielectric layer comprises a CMOS dielectric layer.

14. A method of sensing a gas using the sensing device according to claim 1 , the method comprising:

measuring a value of a capacitance and/or a resistance of the material for sensing a gas, wherein the material comprises an alumina (Al 2 O 3 ) doped conductive metal oxide.

15. A method of manufacturing a sensing device, the method comprising:

forming a substrate;

forming a dielectric layer disposed on the substrate;

forming a heater within the dielectric layer; and

forming a material for sensing a gas,

wherein the material comprises an alumina (Al 2 O 3 ) doped conductive metal oxide,

wherein the sensing device is an NO 2 sensing device,

wherein the conductive metal oxide is any one of the group consisting of tungsten oxide, zinc oxide, indium oxide, titanium oxide, chromium oxide, copper oxide and tin oxide, and

wherein an alumina doping concentration is between 1% and 10% within the conductive metal oxide.