Thermopile self-test and/or self-calibration

1. A method for testing and/or calibrating a thermopile based device, the method comprising:

applying an electrical bias of a first polarity to the thermopile based device and measuring a first value of an electrical parameter; and

applying an electrical bias of a second polarity to the thermopile based device and measuring a second value of an electrical parameter;

wherein said electrical bias of the first polarity and said electrical bias of the second polarity are applied to at least one thermopile, and wherein the first polarity and the second polarity are opposite polarities, and wherein the electrical bias of the first polarity and the electrical bias of the second polarity have a substantially equal magnitude;

determining the magnitudes of the first value and the second value; and

calculating a value of the absolute difference between the magnitude of the first value and the magnitude of the second value, wherein the absolute difference between the magnitude of the first value and the magnitude of the second value is based on the voltage generated in the thermopile due to heating after the voltage generated from the resistance of the material of the thermopile is cancelled out.

2. A method according to claim 1 , further comprising using the first value and the second value to determine whether the device is functioning correctly.

3. A method according to claim 1 , further comprising using the first value and the second value to determine a third value for calibration of the thermopile based device.

4. A method according to claim 1 , further comprising determining whether the value of the absolute difference is greater than a predetermined threshold value.

5. A method according to claim 1 , further comprising storing the value of the absolute difference, or a value calculated from the absolute difference.

6. A method according to claim 1 , wherein said applying the electrical bias of the first polarity to the thermopile based device and applying the electrical bias of the second polarity to the thermopile based device comprise applying an electrical current to the thermopile based device; and

wherein measuring the first value and measuring the second value comprise measuring the voltage across the thermopile based device.

7. A method according to claim 1 , wherein said applying the electrical bias of the first polarity is achieved by directing a first current from a positive terminal to a negative terminal of the thermopile based device; and wherein said applying the electrical bias of the second polarity is achieved by directing a second current from the negative terminal to the positive terminal of the thermopile based device.

8. A method according to claim 1 , further comprising electrically connecting at least two thermopile based devices and testing or calibrating the at least two thermopile based devices simultaneously.

9. A method according to claim 1 , further comprising applying an electrical bias of zero magnitude to the thermopile based device and measuring a value of an electrical parameter, in addition to the first and second values, to determine the functionality of the device and/or the calibration of the device.

10. A system for testing and/or calibrating a thermopile based device, the system comprising:

the thermopile based device;

a first apparatus configured to apply an electrical bias of a first polarity to the thermopile based device and to apply an electrical bias of a second polarity to the thermopile based device, wherein said electrical bias of the first polarity and said electrical bias of the second polarity are applied to the thermopile based device, wherein the first polarity and second polarity are opposite polarities, and wherein the electrical bias of the first polarity and the electric bias of the second polarity have a substantially equal magnitude; and

a second apparatus configured to measure an electrical parameter of the thermopile based device, wherein the second apparatus is further configured to:

determine the magnitudes of the first value and the second value; and

calculate a value of the absolute difference between the magnitude of the first value and the magnitude of the second value, wherein the absolute difference between the magnitude of the first value and the magnitude of the second value is based on the voltage generated in the thermopile due to heating after the voltage generated from the resistance of the material of the thermopile is cancelled out.

11. A system according to claim 10 , wherein the second apparatus is configured to use the first value and the second value to determine whether the device is functioning correctly; and/or the second apparatus is configured to use the first value and the second value to determine a third value for calibration of the thermopile based device.

12. A system according to claim 10 , wherein the first apparatus is configured to apply the electrical bias of the first polarity by directing a first current from a positive terminal to a negative terminal of the thermopile based device; and wherein the first apparatus is configured to apply the electrical bias of the second polarity by directing a second current from the negative terminal to the positive terminal of the thermopile based device.

13. A system according to claim 12 , wherein the first apparatus comprises a plurality of transistors in which a first transistor and a fourth transistor are switched on to direct the first current from the positive terminal to the negative terminal of the thermopile based device, and a second transistor and a third transistor are switched on to direct the second current from the negative terminal to the positive terminal of the thermopile based device.

14. A system according to claim 10 , wherein the thermopile based device and the first and second apparatus are formed on a single chip; or

wherein the thermopile based device and the first and second apparatus are formed on separate chips within a single package.

15. A system according to claim 10 , further comprising an array of thermopile based devices on a single chip, wherein each of the array of thermopile based devices are tested and/or calibrated individually.

16. A system according to claim 10 , wherein the testing and/or calibration is performed at a wafer level or at a package level during production testing.

17. A system according to claim 16 , further comprising a third apparatus configured to store a calibration value after the testing and/or calibration, wherein the third apparatus is formed on a same chip as a thermopile device; or wherein the third apparatus is formed on a separate chip within a same package as the thermopile device.