Method and device for electrical overstress and electrostatic discharge protection
A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.
1. A semiconductor device, comprising:
a signal source;
a load;
a transmission line coupled between the signal source and load;
a series protection circuit electrically coupled in series along the transmission line between the signal source and the load, wherein the series protection circuit includes,
a junction field-effect transistor (JFET), and
a resistor disposed between the JFET and load, wherein the JFET, resistor, and transmission line are electrically coupled in series between the signal source and load; and
a parallel protection circuit electrically coupled between the transmission line and a ground node, wherein the parallel protection circuit is directly coupled to a gate terminal of the JFET.
2. The semiconductor device of claim 1 , wherein the parallel protection circuit includes a transient-voltage-suppression (TVS) diode.
3. The semiconductor device of claim 1 , wherein a conduction terminal of the JFET is directly coupled to a first terminal of the resistor and the gate terminal of the JFET is directly coupled to a second terminal of the resistor.
4. A semiconductor device, comprising:
a signal source;
a load;
a series protection circuit including a junction field-effect transistor (JFET) and a resistor electrically coupled in series between the signal source and the load, wherein a conduction terminal of the JFET is directly coupled to a first terminal of the resistor and a gate terminal of the JFET is directly coupled to a second terminal of the resistor; and
a parallel protection circuit electrically coupled between the load and a ground node, wherein the gate terminal of the JFET is directly coupled to the parallel protection circuit.
5. The semiconductor device of claim 4 , wherein the series protection circuit and parallel protection circuit are disposed within a single semiconductor package.
6. A method of making a semiconductor device, comprising:
providing a junction field-effect transistor (JFET);
providing a resistor electrically coupled in series with the JFET between a signal source and a signal destination of the semiconductor device, wherein a conduction terminal of the JFET is coupled to a first terminal of the resistor and a gate terminal of the JFET is coupled to a second terminal of the resistor;
providing a parallel protection circuit electrically coupled to the series protection circuit; and
electrically coupling the parallel protection circuit directly to a gate terminal of the JFET.
7. The method of claim 6 , wherein providing the parallel protection circuit includes providing a transient-voltage-suppression (TVS) diode.
8. The method of claim 6 , wherein the series protection circuit and parallel protection circuit are packaged together.
9. The method of claim 6 , wherein the parallel protection circuit is coupled to a ground node.
10. An electronic device, comprising:
a series protection circuit electrically coupled in series between a load within the electronic device and a signal source external to the electronic device, wherein the series protection circuit includes,
a junction field-effect transistor (JFET), and
a resistor electrically coupled in series with the JFET between the signal source and load, wherein a conduction terminal of the JFET is coupled to a first terminal of the resistor and a gate terminal of the JFET is coupled to a second terminal of the resistor; and
a parallel protection circuit electrically coupled between the series protection circuit and a voltage node, wherein a gate terminal of the JFET is directly coupled to the parallel protection circuit.
11. The electronic device of claim 10 , wherein the parallel protection circuit includes a transient-voltage-suppression (TVS) diode.
12. The electronic device of claim 10 , wherein the series protection circuit further includes a resistor coupled in series between the JFET and parallel protection circuit.
13. The electronic device of claim 10 , wherein the series protection circuit and parallel protection circuit are disposed within a single semiconductor package.
14. A method of protecting a semiconductor device from electrical overstress (EOS) and electro-static discharge (ESD) events, comprising:
providing a series protection circuit including,
a junction field-effect transistor (JFET), and
a resistor coupled in series with the JFET, wherein a conduction terminal of the JFET is coupled to a first terminal of the resistor and a gate terminal of the JFET is coupled to a second terminal of the resistor; and
providing a parallel protection circuit coupled to the gate terminal of the JFET.
15. The method of claim 14 , wherein providing the parallel protection circuit includes providing a transient-voltage-suppression (TVS) diode.
16. The method of claim 14 , wherein the parallel protection circuit is directly coupled to the gate terminal of the JFET.
17. The method of claim 14 , further including disposing the series protection circuit and parallel protection circuit are within a single semiconductor package.
18. The method of claim 14 , further including coupling the parallel protection circuit to a ground node.