Insulated gate bipolar transistor with epitaxial layer formed on recombination region

1. A method of fabricating a transistor, comprising:

depositing a first epitaxial layer having a first n-type dopant;

depositing a first portion of a second epitaxial layer having a second n-type dopant on the first epitaxial layer;

implanting ions into the first portion of the second epitaxial layer to form a recombination region;

depositing a second portion of the second epitaxial layer having the second n-type dopant on the recombination region, wherein the second portion of the second epitaxial layer is thicker than the first portion of the second epitaxial layer; and

forming trenches in the second portion of the second epitaxial layer, wherein the trenches comprise a trench gate of the transistor and a termination trench.

2. The method of claim 1 , wherein the second portion of the second epitaxial layer is twice as thick as the first portion of the second epitaxial layer.

3. The method of claim 1 , wherein the second portion of the second epitaxial layer is thrice as thick as the first portion of the second epitaxial layer.

4. The method of claim 1 , wherein the ions are from an element that is a different element from the second n-type dopant.

5. The method of claim 4 , wherein implanting the ions into the first portion of the second epitaxial layer to form the recombination region comprises implanting one of argon ions or oxygen ions into the first portion of the second epitaxial layer.

6. The method of claim 1 , wherein depositing the first epitaxial layer comprises depositing the first epitaxial layer on a doped substrate, wherein the doped substrate is a collector of the transistor.

7. The method of claim 6 , wherein the doped substrate is a P+ doped substrate.