Display device and manufacturing method thereof
View Patent ↗The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.
1. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) comprising an oxide semiconductor, a drain electrode, a source electrode, a gate insulating film, a gate electrode, and a channel, which is formed in the oxide semiconductor between the drain electrode and the source electrode,
a channel length direction is defined by a direction the drain electrode and the source electrode oppose to each other,
a channel width direction is defined by a direction orthogonal to the channel length direction,
wherein a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction,
wherein the gate electrode is a scan line,
an extending direction of the scan line is in the channel length direction of the TFT, and
wherein the gate insulating film is formed between the gate electrode and the oxide semiconductor, and
the oxide semiconductor that is not covered by the gate electrode is covered by a silicon oxide film in addition to the gate insulating film.
2. The display device according to claim 1 ,
wherein the oxide semiconductor has an area that does not overlap the gate electrode at both sides of the gate electrode in channel width direction.
3. The display device according to claim 1 ,
wherein either one of a drain electrode and a source electrode of the TFT is a video signal line.
4. The display device according to claim 1 ,
wherein the display device is a liquid crystal display device.
5. The display device according to claim 1 ,
wherein the display device is an organic EL display device.
6. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) comprising an oxide semiconductor, a drain electrode, a source electrode, a gate insulating film, a gate electrode, and a channel, which is formed in the oxide semiconductor between the drain electrode and the source electrode,
a channel length direction is defined by a direction the drain electrode and the source electrode oppose to each other,
a channel width direction is defined by a direction orthogonal to the channel length direction.
wherein a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction,
wherein the gate electrode is a scan line,
an extending direction of the scan line is in the channel length direction of the TFT,
wherein a resistivity of the oxide semiconductor in the area that does not overlap the gate electrode is greater than a resistivity of the oxide semiconductor in the area that overlaps the gate electrode, and
wherein the gate insulating film is formed between the gate electrode and the oxide semiconductor,
the oxide semiconductor that is not covered by the gate electrode is covered by a silicon oxide film in addition to the gate insulating film.
7. The display device according to claim 6 ,
wherein the oxide semiconductor has an area that does not overlap the gate electrode at both sides of the gate electrode in channel width direction.
8. The display device according to claim 6 ,
wherein either one of a drain electrode and a source electrode of the TFT is a video signal line.
9. The display device according to claim 6 ,
wherein the display device is a liquid crystal display device.
10. The display device according to claim 6 ,
wherein the display device is an organic EL display device.
11. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) comprising an oxide semiconductor, a drain electrode, a source electrode, a gate insulating film, a gate electrode, and a channel, which is formed in the oxide semiconductor between the drain electrode and the source electrode,
a channel length direction is defined by a direction the drain electrode and the source electrode oppose to each other,
a channel width direction is defined by a direction orthogonal to the channel length direction,
wherein a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction,
wherein the gate electrode is a scan line,
an extending direction of the scan line is in the channel length direction of the TFT,
wherein a drain electrode and a source electrode of the TFT are formed on a lower layer than a gate electrode of the TFT,
wherein a drain electrode and a source electrode directly contact the oxide semiconductor of the TFT without a through hole, and
wherein the gate insulating film is formed between the gate electrode and the oxide semiconductor,
the oxide semiconductor that is not covered by the gate electrode is covered by a silicon oxide film in addition to the gate insulating film.
12. The display device according to claim 11 ,
wherein the oxide semiconductor has an area that does not overlap the gate electrode at both sides of the gate electrode in channel width direction.
13. The display device according to claim 11 ,
wherein either one of a drain electrode and a source electrode of the TFT is a video signal line.
14. The display device according to claim 11 ,
wherein the display device is a liquid crystal display device.
15. The display device according to claim 11 ,
wherein the display device is an organic EL display device.