Facet on a gallium and nitrogen containing laser diode
Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
1. A laser device, comprising:
a substrate having a surface;
a gallium and nitrogen containing cavity region overlying the surface, the gallium and nitrogen containing cavity region characterized by a first end and a second end, the first end comprising a first etched facet and the second end comprising a second etched facet; and
a passivation layer comprising a polycrystalline layer of Al 2 O 3 directly contacting the first etched facet, wherein the passivation layer is heteroepitaxial and has a crystalline orientation of the first etched facet, and an interface between the passivation layer and the first etched facet is substantially contaminant free.
2. The laser device of claim 1 , wherein the passivation layer further comprises a single-crystalline film of Al 2 O 3 on the polycrystalline layer of Al 2 O 3 .
3. The laser device of claim 1 , wherein the first etched facet has a surface roughness that varies by greater than at least one of about 10 nm, 30 nm, or 50 nm.
4. The laser device of claim 1 , further comprising one or more reflectivity modification layers on the passivation layer, the one or more reflectivity modification layers comprising a plurality of alternating layers of high refractive-index material and low refractive-index material.
5. The laser device of claim 1 , further comprising two to twenty alternating layers of high refractive-index material and low refractive-index material on the passivation layer of Al 2 O 3 with a top-most layer being a high refractive-index material layer.
6. The laser device of claim 1 , further comprising two to twenty alternating layers of high refractive-index material and low refractive-index material on the passivation layer of Al 2 O 3 with a top-most layer being a low refractive-index material layer.
7. The laser device of claim 1 , wherein the laser device is on a gallium and nitrogen containing epitaxial substrate.
8. The laser device of claim 1 , wherein the laser device is bonded to a gallium-free substrate.
9. An apparatus comprising the laser device of claim 1 , wherein the apparatus is a lighting apparatus, an automotive apparatus, a display apparatus, a LIDAR apparatus, or a materials processing apparatus.
10. A laser device, comprising:
a gallium-free substrate;
a gallium and nitrogen containing material having a total thickness of less than 10 μm overlying the gallium-free substrate, the gallium and nitrogen containing material having a cavity region characterized by a first end and a second end, the first end comprising a first facet, and the second end comprising a second facet; and
a passivation layer comprising a polycrystalline layer of Al 2 O 3 directly contacting the first facet.
11. The laser device of claim 10 , wherein the first facet comprises a plurality of etched striations along a direction substantially perpendicular to the gallium-free substrate.
12. The laser device of claim 10 , wherein the first facet has a root mean square surface roughness Rq of about 10 μm or more.
13. The laser device of claim 10 , wherein the first facet has a sidewall angle greater than 88 degrees to 92 degrees inclined relative to a surface normal of the gallium-free substrate.
14. The laser device of claim 10 , further comprising an interface region between the gallium and nitrogen material and the gallium-free substrate, wherein the gallium-free substrate comprises at least one selected from the group consisting of Si, SiC, Al, AlN, diamond, and Cu.
15. The laser device of claim 10 , wherein the first end comprises an etched surface substantially free of contaminants.