Reference voltage generator
View Patent ↗A reference voltage generator is constructed to be equipped with a first constant current circuit which outputs a first constant current with respect to an input voltage, a second constant current circuit which outputs a second constant current, and a voltage generation circuit which generates a voltage based on an input current, and to take a current based on the first constant current and the second constant current as an input current of the voltage generation circuit and output a reference voltage from the voltage generation circuit.
1. A reference voltage generator, comprising:
a first constant current circuit configured to output a first constant current with respect to an input voltage;
a second constant current circuit configured to output a second constant current with respect to the input voltage; and
a voltage generation circuit configured to generate and supply a reference voltage,
wherein the reference voltage is based on a sum of a first reference voltage component based on the first constant current and a second reference voltage component based on the second constant current.
2. The reference voltage generator according to claim 1 ;
wherein the first constant current circuit has a first threshold voltage whose value decreases with respect to a rise in temperature,
wherein the voltage generation circuit has a second threshold voltage whose value decreases with respect to a rise in temperature,
wherein a first reference voltage component is generated based on the first threshold voltage and the second threshold voltage, and has a negative primary coefficient in an entire operating temperature range,
wherein a second reference voltage component is generated based on the second constant current and the second threshold voltage, and has a positive primary coefficient in a second temperature range, which is a high temperature region and included in the entire operating temperature range, and
wherein the reference voltage is based on a sum of the first reference voltage component and the second reference voltage component.
3. The reference voltage generator according to claim 2 , wherein the first constant current circuit comprises a depletion type MOS transistor having a gate and a source electrically connected to each other and supplying the first constant current from the source based on a voltage applied to a drain thereof.
4. The reference voltage generator according to claim 2 , wherein the voltage generation circuit comprises a first enhancement type MOS transistor having a gate and a drain electrically connected to each other, and generating a voltage at the drain from a current applied to the drain.
5. The reference voltage generator according to claim 2 , wherein the second constant current circuit comprises a PN junction diode that outputs the second constant current from an anode thereof, based on a voltage applied to a cathode thereof.
6. The reference voltage generator according to claim 2 , wherein the second constant current circuit comprises a second enhancement type MOS transistor having a gate and a source electrically connected to each other and supplying the second constant current from the source based on a voltage applied to a drain thereof.
7. The reference voltage generator according to claim 4 ;
wherein the reference voltage generator is in a P-type semiconductor substrate, and
wherein the second constant current is a current larger than a leakage current generated by a parasitic diode comprised of the drain of the first enhancement type MOS transistor and the P-type semiconductor substrate.
8. The reference voltage generator according to claim 2 ;
wherein the reference voltage generator is in an N-type semiconductor substrate,
wherein the first constant current circuit is within a first P-type well region in the N-type semiconductor substrate,
wherein the second constant current circuit and the voltage generation circuit are within a second P-type well region in the N-type semiconductor substrate, and
wherein the second constant current is a current smaller than a leak current generated by a parasitic diode comprised of the first P-type well region and the N-type semiconductor substrate.
9. The reference voltage generator according to claim 3 ;
wherein the reference voltage generator is in an N-type semiconductor substrate,
wherein the first constant current circuit is within a first P-type well region in the N-type semiconductor substrate,
wherein the second constant current circuit and the voltage generation circuit are formed within a second P-type well region in the N-type semiconductor substrate, and
wherein the second constant current is a current smaller than a leak current generated by a parasitic diode comprised of the first P-type well region and the N-type semiconductor substrate.
10. The reference voltage generator according to claim 4 ;
wherein the reference voltage generator is in an N-type semiconductor substrate,
wherein the first constant current circuit is within a first P-type well region in the N-type semiconductor substrate,
wherein the second constant current circuit and the voltage generation circuit are formed within a second P-type well region in the N-type semiconductor substrate, and
wherein the second constant current is a current smaller than a leak current generated by a parasitic diode comprised of the first P-type well region and the N-type semiconductor substrate.
11. The reference voltage generator according to claim 5 ;
wherein the reference voltage generator is in an N-type semiconductor substrate,
wherein the first constant current circuit is within a first P-type well region in the N-type semiconductor substrate,
wherein the second constant current circuit and the voltage generation circuit are within a second P-type well region in the N-type semiconductor substrate, and
wherein the second constant current is a current smaller than a leak current generated by a parasitic diode comprised of the first P-type well region and the N-type semiconductor substrate.
12. The reference voltage generator according to claim 6 ;
wherein the reference voltage generator is in an N-type semiconductor substrate,
wherein the first constant current circuit is within a first P-type well region in the N-type semiconductor substrate,
wherein the second constant current circuit and the voltage generation circuit are within a second P-type well region in the N-type semiconductor substrate, and
wherein the second constant current is a current smaller than a leak current generated by a parasitic diode comprised of the first P-type well region and the N-type semiconductor substrate.