Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions
An optoelectronic device is disclosed, comprising: a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region; a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the guide members being aligned with the n+ regions of the first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being aligned with the n-well regions of the first photodiodes; and a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.
1. An optoelectronic device, comprising:
a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region, each n-well region having an upper surface;
a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the plurality of guide members being disposed over the n+ regions of the plurality of first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being disposed over and substantially covering an entirety of the upper surfaces of the n-well regions of the plurality of first photodiodes; and
a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.
2. The optoelectronic device of claim 1 , wherein the layer of light-blocking material includes at least one of a light-reflecting material or a light-absorbing material.
3. The optoelectronic device of claim 1 , wherein each guide member is formed of a light-transmissive material.
4. The optoelectronic device of claim 1 , wherein:
the photodiode array includes a plurality of second photodiodes that are different from the plurality of first photodiodes,
each of the first photodiodes is disposed underneath a respective bandpass filter that is arranged to transmit light in the visible light band, and
each of the second photodiodes being positioned underneath a respective bandpass filter that is arranged to transmit light in the ultraviolet light band.
5. The optoelectronic device of claim 1 , further comprising:
an infrared-pass (IR-pass) filter disposed over at least one of the bandpass filters that has a transmission band in the IR band; and
an IR-cutoff filter disposed over at least one of the bandpass filters that has a transmission band outside of the IR band.
6. The optoelectronic device of claim 1 , wherein the filter array includes a continuous or segmented first metal layer formed over the guide array, and a continuous or segmented second metal layer formed over the first metal layer, the second metal layer including a plurality of portions, such that each portion of the second metal layer is spaced apart from the first metal layer by a different distance.
7. The optoelectronic device of claim 6 , wherein:
the layer of light-blocking material has a first thickness that is greater than a second thickness of a given one of the guide members, and
at least one bandpass filter in the filter array includes a respective first metal portion and a respective second portion that is spaced apart from the first metal portion, the respective first metal portion being disposed over the given one of the guide members in the guide array, such that at least some of the respective first metal portion is situated below a level of a top surface of the layer of light-blocking material.
8. The optoelectronic device of claim 1 , further comprising:
an input-output (I/O) interface; and
a processor configured to:
receive a plurality of signals, each of the signals being generated by a different one of the first photodiodes;
generate, based on the plurality of signals, an indication of a color of light that is incident on the photodiode array; and
output the indication of the color of light via the I/O interface.
9. An optoelectronic device comprising:
a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region, each n-well region having an upper surface;
a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, each guide member being disposed over a different one of the plurality of first photodiodes, and the layer of light-blocking material being disposed over and substantially covering an entirety of the upper surfaces of the n-well regions of the plurality of first photodiodes; and
a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being disposed over a different one of the plurality of guide members, and each bandpass filter having a different respective transmission band.
10. The optoelectronic device of claim 9 , wherein the layer of light-blocking material includes at least one of a light-reflecting material or a light-absorbing material.
11. The optoelectronic device of claim 9 , wherein each guide member is formed of a light-transmissive material.
12. The optoelectronic device of claim 9 , wherein:
the photodiode array includes a plurality of second photodiodes that are different from the plurality of first photodiodes,
each of the first photodiodes is disposed underneath a respective bandpass filter that is arranged to transmit light in the visible light band, and
each of the second photodiodes being positioned underneath a respective bandpass filter that is arranged to transmit light in the ultraviolet light band.
13. The optoelectronic device of claim 9 , further comprising:
an infrared-pass (IR-pass) filter disposed over at least one of the bandpass filters that has a transmission band in the IR band; and
an IR-cutoff filter disposed over at least one of the bandpass filters that has a transmission band outside of the IR band.
14. The optoelectronic device of claim 9 , wherein the filter array includes a continuous or segmented first metal layer formed over the guide array, and a continuous or segmented second metal layer formed over the first metal layer, the second metal layer including a plurality of portions, such that each portion of the second metal layer is spaced apart from the first metal layer by a different distance.
15. The optoelectronic device of claim 14 , wherein:
the layer of light-blocking material has a first thickness that is greater than a second thickness of a given one of the guide members, and
at least one bandpass filter in the filter array includes a respective first metal portion and a respective second portion that is spaced apart from the first metal portion, the respective first portion being disposed over the given one of the guide members in the guide array, such that at least some of the respective first metal portion is situated below a level of a top surface of the layer of light-blocking material.
16. The optoelectronic device of claim 1 , further comprising:
an input-output (I/O) interface; and
a processor configured to:
receive a plurality of signals, each of the signals being generated by a different one of the first photodiodes;
generate, based on the plurality of signals, an indication of a color of light that is incident on the photodiode array; and
output the indication of the color of light via the I/O interface.