IP Library Granted Patent US 10,569,506
Granted Patent B2
US 10,569,506 · App. 15/944,356 · Granted Feb 25, 2020

Superhydrophobic and superoleophobic nanosurfaces

Inventors: Sungho Jin (San Diego, CA); Chulmin Choi (San Diego, CA)
Assignee: The Regents of the University of California
B32B7/02B05D5/00B05D5/08B05D5/083C23C22/66C23C22/83G03F7/0002H01L31/0236H01L31/02366A01N25/34B81B2203/0361B81B2207/11B81C1/00111B81C1/00206B81C1/00404B81C1/00428B81C1/00531B82B3/0038B82Y40/00C23C2222/20H01L21/3065H01L21/3086Y02E10/50Y10T428/24994Y10T428/249924
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Quick Facts
Patent No.
US 10,569,506
App. No.
15/944,356
Granted
Feb 25, 2020
Kind
B2
Abstract

Devices, systems and techniques are described for producing and implementing articles and materials having nanoscale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography.

Claims (24)

1. A method of fabricating a material with a pillar array surface, comprising:

depositing a buffer layer of a buffer layer material on a substrate material, wherein the buffer layer material is a silicon-containing material;

adding a film layer over the buffer layer;

annealing the film layer to form balled-up structures that are distributed in an array of balled-up islands over the buffer layer to produce an etch mask;

etching the buffer layer using the etch mask to create an array of pillar structures including the buffer layer material underneath the etch mask, wherein the pillar structures have a shape that includes at least one of a substantially straight cylinder, negatively tapered rod, or cone and are aligned substantially vertically, and wherein the pillar structures include the balled-up structures over the buffer layer material; and

applying a coating over the array of pillar structures to form an outer layer,

wherein the applying the coating comprises dip coating the array of pillar structures into a thin layer of a coating material to form a mushroom-shaped tip.

2. The method of claim 1 , wherein the pillar array surface exhibits superhydrophobic, superoleophobic, or superomniphobic surface properties.

3. The method of claim 1 , wherein the substrate material includes at least one of silicon (Si), silicon-germanium (Si—Ge), zinc oxide (ZnO), gallium nitride (GaN), gallium arsenide (GaAs), sapphire, window glass, solar cell cover glass, soda lime silicate glass, quartz, alkaline earth boro-aluminosilicate, sodium boro-silicate glass, carbon, graphite, nitride, oxide, fluoride, or a metal, semiconductor, ceramic or polymer material, wherein the film layer comprises Ag, Au, Ni, or Cu.

4. A method of fabricating an anti-fingerprint surface coating structure, comprising:

depositing a transparent buffer layer of a buffer layer material on a transparent substrate material, wherein the transparent buffer layer material is a silicon-containing material;

adding a mask layer of a mask layer material over the transparent buffer layer, wherein the adding includes patterning the mask layer material to form a patterned mask;

etching the transparent buffer layer using the patterned mask to create an array of pillar structures of the transparent buffer layer material underneath the patterned mask, wherein the pillar structures have a shape that includes at least one of a substantially straight cylinder, negatively tapered rod, or cone and are aligned substantially vertically; and

dip coating the array of pillar structures into a thin layer of a coating material to form a mushroom-shaped tip.

5. The method of claim 1 , wherein the etching the buffer layer using the etch mask includes retaining at least a portion of the buffer layer over the substrate.

6. The method of claim 1 , wherein the adding the film layer includes depositing the film layer over the buffer layer in periodic patterns.

7. The method of claim 1 , wherein the coating material includes one or more of uncured polytetrafluoroethylene (PTFE), polydimethylsiloxane (PDMS), or poly(methyl methacrylate) (PMMA).

8. The method of claim 4 , wherein the patterned mask includes an array of nano-sized shapes within a plurality of grids of crisscrossed lines of a particular spacing and a particular width.

9. The method of claim 4 , wherein the coating material comprises uncured PTFE, polydimethylsiloxane (PDMS), or poly(methyl methacrylate) (PMMA).

10. The method of claim 1 , further comprising:

impregnating a superhydrophobic liquid or solid between pillar structures in the array of pillar structures, after dip coating the array of pillar structures into the thin layer of the coating material.

11. The method of claim 10 , wherein the superhydrophobic liquid or solid comprises polytetrafluoroethylene, a trichlorosilane, or ultra-high strength polyethylene.

12. The method of claim 1 , wherein the dip coating the array of pillar structures includes orienting the array of pillar structures above the thin layer of the coating material and contacting the array of pillar structures with the thin layer of the coating material to form the mushroom-shaped tip of the pillar structures of the array.

13. The method of claim 4 , wherein the dip coating the array of pillar structures includes orienting the array of pillar structures above the thin layer of the coating material and contacting the array of pillar structures with the thin layer of the coating material to form the mushroom-shaped tip of the pillar structures of the array.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2023
From: ROSWELL BIOTECHNOLOGIES, INC.
To: ROSWELL ME INC.
Reel/Frame 064073/0448 →
SECURITY INTEREST Recorded Nov 4, 2021
From: ROSWELL BIOTECHNOLOGIES, INC.
To: WESTERN ALLIANCE BANK, AN ARIZONA CORPORATION
Reel/Frame 058025/0921 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2019
From: JIN, SUNGHO; CHOI, CHULMIN
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 048659/0473 →
Continuity (4)
Continuation 13996477
Provisional Application 61508591 · Jul 15, 2011
Provisional Application 61425205 · Dec 20, 2010
Related Publication 20180297321A1 · Oct 18, 2018
Cited By (2)
US 12,459,864 US 12,594,689