Wavelength converting material for a light emitting device

1. A device comprising:

a wavelength converting material comprising:

a cubic crystal structure;

an Eu 2+ dopant;

cubic coordination of at least one Eu 2+ dopant site by X [2] (X═N, O) atoms;

star-shaped Y(SiX 4 ) 4 (Y═C, N) host lattice building blocks;

AE, where AE=Ca, Sr, Ba; and

RE, where RE=Y, Lu, La, Sc.

2. The device of claim 1 wherein an average effective ionic radii for AE+RE is no more than 120 pm.

3. The device of claim 1 wherein the wavelength converting material comprises AE 3−x1−y+z RE 3−x2+y−z [Si 9−w Al w (N 1−y C y ) [4] (N 16−z−w O z+w ) [2] ]:Eu x1 ,Ce x2 , where AE=Ca, Sr, Ba; RE=Y, Lu, La, Sc; 0≤x1≤0.18; 0≤x2≤0.2; x1+x2>0; 0≤y≤1; 0≤z≤3; 0≤w≤3.

4. The device of claim 1 further comprising a light emitting diode that emits blue light, wherein the wavelength converting material is disposed in a path of light emitted by the light emitting diode.

5. The device of claim 1 wherein the wavelength converting material is a first wavelength converting material that emits light having a peak wavelength that is red, the device further comprising a second wavelength converting material that emits light having a peak wavelength that is yellow or green.

6. The device of claim 1 wherein the wavelength converting material is formed into a ceramic.

7. The device of claim 6 , wherein the wavelength converting material has a density of at least 90% of a density of a single crystal of the wavelength converting material.

8. The device of claim 1 wherein the wavelength converting material is selected from the group consisting of Ca 2.49 La 0.5 Y 3 Si 9 N 16.5 C 0.5 :Eu 0.01 , Ca 2.985 Y 3 Si 8 AlON 16 :Eu 0.015 , Ca 2.985 Y 3 Si 9 N 17 :Eu 0.015 , Ca 1.985 La 4 Si 9 N 16 C:Eu 0.015 , Sr 1.985 Y 4 Si 9 N 16 C:Eu 0.015 , Sr 2.98 Sc 3 Si 9 N 17 : Eu 0.02 , Sr 2.98 Lu 3 Si 9 N 17 : Eu 0.02 , and Ca 5.97 Si 9 O 3 N 14 : Eu 0.03 .

9. The device of claim 1 wherein the wavelength converting material is Ca 3−x1−y RE 3+y Si 9 N 1−y C y N 16 :Eu x1 wherein 0.004<=x1<=0.09 and 0<y<=1.

10. A method comprising:

synthesizing a wavelength converting material comprising AE 3−x1−y+z RE 3−x2+y−z [Si 9−w Al w (N 1−y C y ) [4] (N 16−z−w O z+w ) [2] ]:EU x1 Ce x2 , where AE=Ca, Sr, Ba; RE=Y, Lu, La, Sc; 0≤x1≤0.18; 0≤x2≤0.2; x1+x2>0; 0≤y≤1; 0≤z≤3; 0≤w≤3, said synthesizing comprising:

providing a first precursor material comprising an alkaline earth element;

providing a second precursor material comprising a rare earth element;

providing a silicon source;

providing a dopant source;

mixing the first precursor material, the second precursor material, the silicon source, and the dopant source; and

firing the mixture.

11. The method of claim 10 wherein the first precursor material is selected from the group consisting of AE 3 N 2 and AEH 2 , where AE is an alkaline earth element.

12. The method of claim 10 wherein the second precursor material is selected from the group consisting of silicide RESi 2 , silicide Tris[N,N-bis(trimethylsilyl)amide]RE(III), nitride REN, mixed silicides crystallizing in the ThSi 2 structure type, and AE 1−x RE x Si 2 , where RE is a rare earth element.

13. The method of claim 10 wherein the silicon source is selected from the group consisting of Si 3 N 4 , perhydropolysilazane, silicon diimide, silicon, and silicon carbide.

14. The method of claim 10 wherein the dopant source is selected from the group consisting of Eu 2 O 3 , Eu 2 Si 5 N 8 , CeO 4 , CeF 3 , and Tris[N,N-bis(trimethylsilyl)amide]cerium.

15. The method of claim 10 wherein firing the mixture comprises:

forming an intermetallic precursor by a first firing under argon atmosphere;

processing the intermetallic precursor under a nitrogen or hydrogen-nitrogen mixture atmosphere to form a nitride phosphor material; and

increasing crystallinity of the nitride phosphor material by a second firing under an elevated nitrogen pressure.

16. The method of claim 10 , further comprising providing one or more fluxes, and providing one or more scattering materials.