Semiconductor device

1. A semiconductor device comprising:

a semiconductor substrate;

a first bonding pad provided on an upper surface of the semiconductor substrate and constituted of a metal including aluminum;

a second bonding pad provided on the upper surface of the semiconductor substrate; and

a first protrusion protruding from an upper surface of the first bonding pad,

wherein

the first protrusion is provided on the upper surface of the first bonding pad only at a position adjacent to a peripheral edge of the first bonding pad, the peripheral edge of the first bonding pad being opposed to the second bonding pad, and

the first protrusion is constituted of a metal having a Vickers hardness higher than a Vickers hardness of the first bonding pad.

2. The semiconductor device of claim 1 , wherein

a height of the first protrusion is a half or more of a thickness of the first bonding pad.

3. The semiconductor device of claim 1 , further comprising;

a second protrusion protruding from an upper surface of the second bonding pad,

wherein

the second bonding pad is constituted of a metal including aluminum, and

the second protrusion is provided on the upper surface of the second bonding pad only at a position adjacent to a peripheral edge of the second bonding pad, the peripheral edge of the second bonding pad being opposed to the first bonding pad, and

the second protrusion is constituted of a metal having a Vickers hardness higher than a Vickers hardness of the second bonding pad.

4. The semiconductor device of claim 3 , wherein

a height of the second protrusion is a half or more of a thickness of the second bonding pad.

5. The semiconductor device of claim 1 , further comprising:

a first wire connected to the first bonding pad and constituted of a metal including copper; and

a second wire connected to the second bonding pad and constituted of a metal including 5 copper.