IP Library Granted Patent US 10,618,814
Granted Patent B2
US 10,618,814 · App. 15/948,158 · Granted Apr 14, 2020

Polycrystalline diamond bodies incorporating fractionated distribution of diamond particles of different morphologies

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Quick Facts
Patent No.
US 10,618,814
App. No.
15/948,158
Granted
Apr 14, 2020
Kind
B2
Abstract

Diamond bodies and methods of manufacture are disclosed. Diamond bodies are formed from at least a bimodal, alternatively a tri-modal or higher modal, feedstock having at least one fraction of modified diamond particles with a fine particle size (0.5-3.0 μm) and at least one fraction of diamond particles with coarse particle size (15.0 to 30 μm). During high pressure—high temperature processing, fine particle sized, modified diamond particles in the first fraction preferentially fracture to smaller sizes while preserving the morphology of coarse particle sized diamond particles in the second fraction. Diamond bodies incorporating the two fractions have a microstructure including second fraction diamond particles dispersed in a continuous matrix of first fraction modified diamond particles and exhibit improved wear characteristics, particularly for wear associated with drilling of geological formations.

Claims (51)

1. A polycrystalline diamond body, comprising a plurality of diamond grains that are bonded to one another through diamond particle-to-diamond particle bonds,

wherein:

the diamond grains comprise a first fraction and a second fraction;

the first fraction has a first median particle distribution D50;

the second fraction has a second median particle distribution D50;

the second fraction of diamond grains comprises at least about 60 vol. % of the diamond grains in the diamond body;

the first median particle distribution D50 is less than the second median particle distribution D50;

at least about 40% of the first fraction of diamond grains have a sphericity of less than about 0.7; and

at least about 75% of the second fraction of diamond grains have a sphericity of greater than about 0.8.

2. The polycrystalline diamond body of claim 1 , wherein the polycrystalline diamond body includes a beveled surface.

3. The polycrystalline diamond body of claim 1 , wherein, within the microstructure of the polycrystalline diamond body, particles of the first fraction and a binder phase are distributed within a matrix, and

wherein particles of the second fraction are separated from each other by the matrix.

4. The polycrystalline diamond body of claim 3 , wherein a minimum separation distance between individual particles of the second fraction is no less than a value of the first median particle distribution D50.

5. The polycrystalline diamond body of claim 1 , wherein a matrix including particles of the first fraction and a binder phase is continuous throughout the polycrystalline diamond body, and

wherein the matrix separates individual particles of the second fraction from one another.

6. The polycrystalline diamond body of claim 5 , wherein a minimum separation distance between individual particles of the second fraction is no less than a value of the first median particle distribution D50.

7. The polycrystalline diamond body of claim 1 , wherein the second median particle distribution D50 is from about 10.0 μm to about 40.0 μm.

8. The polycrystalline diamond body of claim 7 , wherein the second median particle distribution D50 is from about 15.0 μm to about 20.0 μm.

9. The polycrystalline diamond body of claim 8 , wherein the first median particle distribution D50 is about 3 μm or less.

10. The polycrystalline diamond body of claim 1 , wherein the second fraction of diamond grains comprises from about 60 vol. % of the diamond grains in the diamond body to about 80 vol. % of the diamond grains in the diamond body.

11. The polycrystalline diamond body of claim 1 , wherein the second median particle distribution D50 is at least about 7 times the first median particle distribution D50.

12. A polycrystalline diamond cutter, comprising:

a substrate; and

the polycrystalline diamond body of claim 1 ,

wherein the polycrystalline diamond body is joined coherently to the substrate along an interface.

13. The polycrystalline diamond cutter of claim 12 , wherein the substrate is made of a hard metal, an alloy or a composite.

14. The polycrystalline diamond cutter of claim 12 , wherein the substrate is made of a cemented carbide or cobalt sintered tungsten carbide.

15. The polycrystalline diamond cutter of claim 12 , wherein the polycrystalline diamond body includes a beveled surface.

16. The polycrystalline diamond cutter of claim 12 , wherein, within the microstructure of the polycrystalline diamond body, particles of the first fraction and a binder phase are distributed within a matrix, and

wherein particles of the second fraction are separated from each other by the matrix.

17. The polycrystalline diamond cutter of claim 16 , wherein a minimum separation distance between individual particles of the second fraction is no less than a value of the first median particle distribution D50.

18. The polycrystalline diamond cutter of claim 12 , wherein a matrix including particles of the first fraction and a binder phase is continuous throughout the polycrystalline diamond body, and

wherein the matrix separates individual particles of the second fraction from one another.

19. The polycrystalline diamond cutter of claim 18 , wherein a minimum separation distance between individual particles of the second fraction is no less than a value of the first median particle distribution D50.

20. The polycrystalline diamond cutter of claim 12 , wherein the second median particle distribution D50 is from about 10.0 μm to about 40.0 μm.

21. The polycrystalline diamond cutter of claim 20 , wherein the second median particle distribution D50 is from about 15.0 μm to about 20.0 μm.

22. The polycrystalline diamond cutter of claim 21 , wherein the first median particle distribution D50 is about 3 μm or less.

23. The polycrystalline diamond cutter of claim 12 , wherein the second fraction of diamond grains comprises from about 60 vol. % of the diamond grains in the diamond body to about 80 vol. % of the diamond grains in the diamond body.

24. The polycrystalline diamond cutter of claim 12 , wherein the second median particle distribution D50 is at least about 7 times the first median particle distribution D50.

25. A polycrystalline diamond cutter, comprising:

a substrate made of a cemented carbide or cobalt sintered tungsten carbide; and

a polycrystalline diamond body joined coherently to the substrate along an interface,

wherein the polycrystalline diamond body comprises a plurality of diamond grains that are bonded to one another through diamond particle-to-diamond particle bonds,

wherein the diamond grains comprise a first fraction and a second fraction, the first fraction having a first median particle distribution D50 and the second fraction having a second median particle distribution D50,

wherein the first median particle distribution D50 is less than the second median particle distribution D50,

wherein the second fraction of diamond grains comprises from about 60 vol. % of the diamond grains in the diamond body to about 80 vol. % of the diamond grains in the diamond body, and

wherein at least about 40% of the first fraction of diamond grains have a sphericity of less than about 0.7 and at least about 75% of the second fraction of diamond grains have a sphericity of greater than about 0.8.

26. The polycrystalline diamond cutter of claim 25 , wherein a matrix including particles of the first fraction and a binder phase is continuous throughout the polycrystalline diamond body,

wherein the matrix separates individual particles of the second fraction from one another, and

wherein a minimum separation distance between individual particles of the second fraction is no less than a value of the first median particle distribution D50.

27. The polycrystalline diamond cutter of claim 26 , wherein the first median particle distribution D50 is about 3 μm or less and the second median particle distribution D50 is from about 15.0 μm to about 20.0 μm.

Assignments (9)
CHANGE OF NAME Recorded Nov 30, 2022
From: BAKER HUGHES, A GE COMPANY, LLC
To: BAKER HUGHES HOLDINGS LLC
Reel/Frame 062019/0790 →
SECURITY INTEREST Recorded Aug 31, 2021
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 057388/0971 →
2L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057650/0602 →
1L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057651/0040 →
SUPPLEMENT NO. 1 TO GRANT OF FIRST LIEN SECURITY INTEREST IN PATENT RIGHTS Recorded Jul 31, 2020
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 053368/0730 →
SUPPLEMENT NO. 1 TO GRANT OF SECOND LIEN SECURITY INTEREST IN PATENT RIGHTS Recorded Jul 31, 2020
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 053368/0776 →
FIRST LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0415 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0472 →
CHANGE OF NAME Recorded Apr 18, 2018
From: BAKER HUGHES INCORPORATED
To: BAKER HUGHES, A GE COMPANY, LLC
Reel/Frame 047173/0319 →