Emitter structures for ultra-small vertical cavity surface emitting lasers (VCSELs) and arrays incorporating the same

1. A laser diode, comprising:

a semiconductor structure comprising a lower Bragg reflector layer, a lower lateral conduction layer, an active region, an upper lateral conduction layer, and an upper Bragg reflector layer that are sequentially stacked, the upper Bragg reflector layer comprising a lasing aperture having an optical axis oriented perpendicular to a surface of the active region; and

first and second contacts electrically connected to the upper and lower lateral conduction layers, respectively,

wherein the active region comprises a first material in a micro-cavity between the upper and lower Bragg reflector layers, wherein the upper and lower Bragg reflector layers comprise respective dielectric materials, and wherein respective lattice structures of the first material and at least one of the respective dielectric materials are independent of one another,

wherein at least one of the lower Bragg reflector layer, the lower lateral conduction layer, the active region, the upper lateral conduction layer, or the upper Bragg reflector layer comprises a micro-transfer-printed layer having a residual tether portion and/or a relief feature at a periphery thereof.

2. The laser diode of claim 1 , wherein the respective lattice structures of the first material and the at least one of the respective dielectric materials are lattice mismatched.

3. The laser diode of claim 1 , wherein the first material is a indium phosphide (InP)-based, gallium arsenide (GaAs)-based, and/or gallium nitride (GaN)-based.

4. The laser diode of claim 1 , wherein the upper Bragg reflector layer has a lower reflectivity than the lower Bragg reflector layer.

5. The laser diode of claim 1 , wherein an interface between the lower Bragg reflector layer and the lower lateral conduction layer is free of a seed layer for the first material.

6. The laser diode of claim 1 , wherein an interface between the lower Bragg reflector layer and the lower lateral conduction layer comprises an adhesive layer.

7. The laser diode of claim 1 , wherein at least one of the residual tether portion or the relief feature comprises the first material.

8. The laser diode of claim 1 , wherein the first material is configured to emit light comprising a wavelength of about 1400 nanometers to about 1600 nanometers.

9. The laser diode of claim 1 , wherein the laser diode comprises a first laser diode of a plurality of laser diodes arranged in an array on a surface of a non-native substrate, wherein the array comprises a Light Detection and Ranging (LIDAR) emitter array.

10. A method of fabricating a laser array, the method comprising:

providing a plurality of laser diodes on a non-native substrate, wherein each of the laser diodes comprises a semiconductor structure comprising a lower Bragg reflector layer, a lower lateral conduction layer, an active region, an upper lateral conduction layer, and an upper Bragg reflector layer that are sequentially stacked, and first and second contacts electrically connected to the upper and lower lateral conduction layers, respectively, the upper Bragg reflector layer comprising a lasing aperture having an optical axis oriented perpendicular to a surface of the active region,

wherein the active region comprises a first material in a micro-cavity between the upper and lower Bragg reflector layers, wherein the upper and lower Bragg reflector layers comprise respective dielectric materials, and wherein respective lattice structures of the first material and at least one of the respective dielectric materials are independent of one another,

wherein at least one of the lower Bragg reflector layer, the lower lateral conduction layer, the active region, the upper lateral conduction layer, or the upper Bragg reflector layer comprises a micro-transfer-printed layer having a residual tether portion and/or a relief feature at a periphery thereof.

11. The method of claim 10 , wherein providing the laser diodes on the non-native substrate comprises, for each of the semiconductor structures:

forming the lower Bragg reflector layer on the non-native substrate using a thin film deposition process;

providing the active region on a surface of the lower Bragg reflector layer, wherein an interface there between is free of a seed layer for the first material; and

forming the upper Bragg reflector layer on a surface of the active region using the thin film deposition process.

12. A Light Detection and Ranging (LIDAR) array, comprising:

a plurality of laser diodes arranged on a non-native substrate, wherein each of the laser diodes comprises:

a semiconductor structure comprising a lower Bragg reflector layer, a lower lateral conduction layer, an active region, an upper lateral conduction layer, and an upper Bragg reflector layer that are sequentially stacked, the upper Bragg reflector layer comprising a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region; and

first and second contacts electrically connected to the upper and lower lateral conduction layers, respectively,

wherein the active region comprises a first material in a micro-cavity between the upper and lower Bragg reflector layers, wherein the upper and lower Bragg reflector layers comprise respective dielectric materials, and wherein respective lattice structures of the first material and at least one of the respective dielectric materials are independent of one another,

wherein at least one of the lower Bragg reflector layer, the lower lateral conduction layer, the active region, the upper lateral conduction layer, or the upper Bragg reflector layer comprises a micro-transfer-printed layer having a residual tether portion and/or a relief feature at a periphery thereof.

13. The LIDAR array of claim 12 , wherein a spacing between a first laser diode of the plurality of laser diodes and an immediately adjacent laser diode of the plurality of laser diodes is less than about 150 micrometers, less than about 100 micrometers, or less than about 50 micrometers, and greater than about 10 micrometers.

14. The LIDAR array of claim 12 , wherein the plurality of laser diodes is a plurality of first laser diodes, and further comprising:

a plurality of second laser diodes arranged on the non-native substrate, wherein each of the second laser diodes comprises:

a second active region of a second material between second upper and lower Bragg reflector layers, and wherein respective lattice structures of the second material and the second lower Bragg reflector layer are independent of one another.

15. The LIDAR array of claim 14 , wherein the first material is configured to emit light comprising a wavelength of about 1400 nanometers to about 1600 nanometers, and wherein the second material is configured to emit light comprising a wavelength of about 350 nanometers to about 450 nanometers.

16. The LIDAR array of claim 14 , wherein:

the second laser diodes are interspersed in the LIDAR array among the first laser diodes, or

the LIDAR array comprises a first area comprising the first laser diodes and free of the second laser diodes, and a second area comprising the second laser diodes and free of the first laser diodes.

17. The LIDAR array of claim 12 , wherein the respective lattice structures of the first material and the at least one of the respective dielectric materials are lattice mismatched.

18. The LIDAR array of claim 12 , wherein the upper Bragg reflector layer has a lower reflectivity than the lower Bragg reflector layer.

19. The LIDAR array of claim 12 , wherein the first material is indium phosphide (InP)-based, gallium arsenide (GaAs)-based, and/or gallium nitride (GaN)-based.

20. The LIDAR array of claim 12 , wherein an interface between the lower Bragg reflector layer and the lower lateral conduction layer comprises an adhesive layer.