High throughput polishing system for workpieces

1. A method for polishing a plurality of workpieces comprising:

placing a plurality of workpieces in a tray;

moving the tray with the plurality of workpieces to a polishing tool, the polishing tool having multiple polishing heads for polishing the plurality of workpieces, the plurality of workpieces being held simultaneously and in a fixed position on the tray while the tray is within the polishing tool by utilizing an adhesive material, a vacuum, or an absorbent material; and

polishing the plurality of workpieces with the polishing heads to a coarse granularity and subsequently to a fine granularity to create a finished polished surface on the plurality of workpieces;

wherein:

the polishing heads include a first set of polishing heads configured to polish the plurality of workpieces to the coarse granularity via a chemical mechanical polisher (CMP),

the polishing heads include a second set of polishing heads configured to polish the plurality of workpieces to the fine granularity via a buff polisher, and

the first set of polishing heads and the second set of polishing heads operate in parallel separated by a high pressure rinse, and are configured to polish the plurality of workpieces in a first direction perpendicular to a movement of the tray in a second direction.

2. The method of claim 1 , wherein:

the first set of polishing heads are in a first portion of the polishing tool,

the second set of polishing heads are in a second portion of the polishing tool, and

polishing the plurality of workpieces with the polishing heads including moving the plurality of workpieces from the first portion of the polishing tool to the second portion of the polishing tool.

3. The method of claim 1 , wherein the polishing heads are configured with a material selected from one of a pad material, a slurry material, or a combination thereof to polish the plurality of workpieces first to the coarse granularity and subsequently to the fine granularity to create the finished polished surface on the plurality of workpieces.

4. The method of claim 1 , wherein the plurality of workpieces comprises a plurality of semiconductor substrates.

5. The method of claim 1 , wherein the plurality of workpieces comprises a plurality of optoelectronic devices.

6. The method of claim 5 , wherein the plurality of optoelectronic devices comprises a plurality of photovoltaic devices.

7. The method of claim 6 , wherein the finished polished surface of each of the plurality of photovoltaic devices is an epi-ready surface.

8. A system, comprising:

a polisher including at least one set of polishing heads;

at least one wafer tray for holding a plurality of workpieces simultaneously in a fixed position while in the polisher, and wherein the plurality of workpieces are held in the fixed position by utilizing an adhesive material, a vacuum, or an absorbent material; and

a conveyor system for providing the at least one wafer tray to the polisher, wherein the conveyor system is further for moving the at least one wafer tray within the polisher to have the at least one set of polishing heads polish the plurality of workpieces first to a coarse granularity and subsequently to a fine granularity to provide a finished polished surface on the plurality of workpieces;

wherein:

the at least one set of polishing heads includes a first set of polishing heads configured to polish the plurality of workpieces to the coarse granularity via a chemical mechanical polisher (CMP),

the at least one set of polishing heads includes a second set of polishing heads configured to polish the plurality of workpieces to the fine granularity via a buff polisher, and

the first set of polishing heads and the second set of polishing heads operate in parallel separated by a high pressure rinse, and are configured to polish the plurality of workpieces in a first direction perpendicular to a movement of the at least one wafer tray in a second direction.

9. The system of claim 8 , wherein:

the conveyor system moves the at least one wafer tray in the first direction under both the first set of polishing heads and the second set of polishing heads, and

the first set of polishing heads and the second set of polishing heads move over the at least one wafer tray in the second direction that is perpendicular to the first direction.

10. The system of claim 8 , wherein the at least one set of polishing heads is configured with a material selected from one of a pad material, a slurry material, or a combination thereof to polish the plurality of workpieces first to the coarse granularity and subsequently to the fine granularity to provide the finished polished surface on the plurality of workpieces.

11. The system of claim 8 , wherein the plurality of workpieces comprises a plurality of optoelectronic devices.

12. The system of claim 11 , wherein the plurality of optoelectronic devices comprises a plurality of photovoltaic devices.

13. The system of claim 12 , wherein the finished polished surface of each of the plurality of photovoltaic devices is an epi-ready surface.

14. An automated high throughput polishing system, comprising:

a first dry robot for placing a plurality of workpieces in a wafer tray;

the wafer tray for holding the plurality of workpieces simultaneously and in a fixed position, wherein the plurality of workpieces are held in the fixed position in the wafer tray while the tray is within a polisher by utilizing an adhesive material, a vacuum, or an absorbent material;

a conveyor system for receiving the wafer tray from the first robot and moving the wafer tray within the polisher;

a polisher including a set of polishing heads that polish the plurality of workpieces first to a coarse granularity and subsequently to a fine granularity to provide a finished polished surface on the plurality of workpieces; and

an inline cleaner for cleaning the plurality of workpieces after polishing by the polisher;

wherein:

the set of polishing heads includes a first set of polishing heads configured to polish the plurality of workpieces to the coarse granularity via a chemical mechanical polisher (CMP),

the set of polishing heads includes a second set of polishing heads configured to polish the plurality of workpieces to the fine granularity via a buff polisher, and

the first set of polishing heads and the second set of polishing heads operate in parallel separated by a high pressure rinse, and are configured to polish the plurality of workpieces in a first direction perpendicular to a movement of the wafer tray in a second direction.

15. The system of claim 14 , wherein:

the conveyor system moves the wafer tray in the first direction under the set of polishing heads, and

the set of polishing heads moves over the wafer tray in the second direction that is perpendicular to the first direction.

16. The system of claim 14 , wherein the plurality of workpieces comprises a plurality of photovoltaic devices.

17. The system of claim 16 , wherein the finished polished surface of each of the plurality of photovoltaic devices is an epi-ready surface.