Light-emitting device comprising flexible substrate and light-emitting element
View Patent ↗The light-emitting device includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a light-emitting element and a thin-film transistor controlling the light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the thin-film transistor and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the light-emitting element and the thin-film transistor.
1. A light-emitting device comprising:
a flexible substrate;
a lower barrier layer positioned above the flexible substrate;
a light-emitting element and a thin-film transistor controlling the light-emitting element positioned above the lower barrier layer, wherein the light-emitting element includes a light-emitting layer;
a first upper barrier layer positioned above the light-emitting layer of the light-emitting element and including a first inorganic material; and
a second upper barrier layer positioned above the thin-film transistor and including a second inorganic material, wherein
the first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the light-emitting element and the thin-film transistor, and
wherein the light-emitting device further comprises a resin layer composed of organic material above the first and second upper barrier layers, and disposed in the region between the light-emitting element and the thin-film transistor.
2. The light-emitting device according to claim 1 , wherein
the lower barrier layer includes a first lower barrier layer and a second lower barrier layer spaced from each other;
the light-emitting element is positioned above the first lower barrier layer; and
the thin-film transistor is positioned above the second lower barrier layer.
3. The light-emitting device according to claim 1 , further comprising:
a connection wiring connecting the light-emitting element and the thin-film transistor.
4. The light-emitting device according to claim 1 , further comprising:
a first passivation layer disposed between the light-emitting element and the lower barrier layer; and
a second passivation layer disposed above the thin-film transistor, wherein
the first passivation layer and the second passivation layer are made of the same material and have the same thickness.
5. The light-emitting device according to claim 1 ,
wherein the thin-film transistor has a source/drain electrode, and
wherein the light-emitting device further comprises a connection wiring directly connecting the light-emitting element to the source/drain electrode of the thin-film transistor and different from the source/drain electrode of the thin-film transistor.
6. The light-emitting device according to claim 1 ,
wherein the lower barrier layer includes spaced apart first and second lower barrier layers, the first and second lower barrier layers being spaced apart in a second region that is filled with the resin layer composed of organic material between the light-emitting element and the thin-film transistor, and the first and second lower barrier layers being positioned, respectively, below the light-emitting element and the thin-film transistor, and
wherein the second region has a rigidity lower than those of the first lower barrier layer and the second lower barrier layer, due to the resin layer composed of organic material in the second region.