Wideband distributed power amplifier utilizing metamaterial transmission line conception with impedance transformation
A power amplifier includes a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency, an input transmission line circuit coupled to a gate terminal of the transistor, and an output transmission line circuit coupled to a drain terminal of the transistor. The input transmission line includes an inductor-capacitor (LC) circuit that resonates at a first resonant frequency equaled to or higher than the higher operating frequency. The output transmission line includes an inductor-capacitor-inductor (LCL) circuit and a capacitor-inductor-capacitor (CLC) circuit. The LCL circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency. The CLC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency.
1. A power amplifier used in a wideband radio frequency (RF) circuit implemented in an integrated circuit (IC), the power amplifier comprising:
a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency;
an input metamaterial transmission line coupled to a gate terminal of the transistor, wherein the input metamaterial transmission line includes a first inductor-capacitor (LC) circuit formed based on metamaterial, wherein the first LC circuit resonates at a first resonant frequency equaled to or higher than the higher operating frequency; and
an output metamaterial transmission line coupled to a drain terminal of the transistor, wherein the output metamaterial transmission line includes a second LC circuit and a third LC circuit to form a composite metamaterial transmission line, wherein the second LC circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency, and wherein the third LC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency.
2. The power amplifier of claim 1 , wherein the transistor, the input metamaterial transmission line, and the output metamaterial transmission line are integrated as a part of the IC.
3. The power amplifier of claim 1 , wherein the first LC circuit comprises a first capacity (C R2 ) coupled in parallel to the transistor and a first inductor (L R2 ) coupled in series to the transistor.
4. The power amplifier of claim 3 , wherein the C R2 is approximately 55 femtofarad (fF), and wherein the L R2 is approximately 0.55 nanohenry (nH).
5. The power amplifier of claim 3 , wherein an impedance of the input metamaterial transmission line circuit relatively matches a predetermined input impedance associated with the transistor.
6. The power amplifier of claim 5 , wherein the L R2 and the C R2 are configured such that the impedance of the input metamaterial transmission line circuit relatively matches a squared-root of L R2 /C R2 .
7. The power amplifier of claim 5 , wherein the predetermined input impedance is approximately 50 ohms.
8. The power amplifier of claim 1 , wherein an impedance of the output metamaterial transmission line relatively matches a predetermined output impedance associated with the transistor.
9. The power amplifier of claim 8 , wherein the predetermined output impedance is approximately 50 ohms.
10. The power amplifier of claim 3 , wherein the second LC circuit comprises a second inductor (L L1 ), a second capacitor (C L1 ), and a third inductor (L L1 ) having an identical inductance value as of the second inductor.
11. The power amplifier of claim 10 , wherein the L L1 and the C L1 are configured such that the impedance of the output metamaterial transmission line relatively matches a squared-root of L L1 /C L1 .
12. The power amplifier of claim 10 , wherein the C R1 is approximately 55 femtofarad (fF), and wherein the L R1 is approximately 0.55 nanohenry (nH).
13. The power amplifier of claim 10 , wherein the third LC circuit comprises a third capacitor (C R1 ), a fourth inductor (L R1 ), and a fourth capacitor (C R1 ) having an identical capacitance value as of the third capacitor.
14. The power amplifier of claim 13 , wherein the L R1 and the C R1 are configured such that the impedance of the output transmission line circuit relatively matches a squared-root of L R1 /C R1 .
15. The power amplifier of claim 13 , wherein the C L1 is approximately 120 fF, and wherein L L1 is approximately 0.285 nH.
16. The power amplifier of claim 13 , wherein the second LC circuit represents a left-hand metamaterial transmission line, and wherein the third LC circuit represents a right-hand metamaterial transmission line.
17. The power amplifier of claim 16 , wherein the third capacitor is coupled to the second inductor in parallel.
18. The power amplifier of claim 17 , wherein the second capacitor and the fourth inductor are coupled in series.
19. The power amplifier of claim 18 , wherein the fourth capacitor and the third inductor are coupled in parallel.
20. The power amplifier of claim 19 , wherein the second capacitor and the fourth inductor coupled in series are coupled between parallel coupled the third capacitor and the second inductor and the parallel coupled fourth capacitor and the third inductor to form a composite metamaterial transmission line.