Power semiconductor device and method for producing a power semiconductor device
The present application relates to a power semiconductor device, including a substrate having a first side and a second side, the first side and the second side being located opposite to each other, wherein the first side includes a cathode and the second side includes an anode, wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, preferably at at least one of the first side and the second side, the junction termination is coated by a passivating coating, the passivating coating including at least one material selected from the group consisting of an inorganic-organic composite material, parylene, and a phenol resin comprising polymeric particles. A device as described above thus addresses issues of passivation of junction terminations and thus prevents or at least reduces the danger of fatal defects such as unstable device operation caused by changes in film properties, instability, water permeability, permeability of movable ions such as sodium, pinholes and cracks, and aluminum metal disconnection or corrosion due to degradation and stress.
1. A power semiconductor device, comprising
a substrate having a first side and a second side, the first side and the second side being located opposite to each other, wherein the first side comprises a cathode and the second side comprises an anode, wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, at least one of the first side and the second side, characterized in
that the junction termination is coated by a passivating coating, the passivating coating comprising a material consisting of
an organic-inorganic polymer.
2. A power semiconductor device, comprising
a substrate having a first side and a second side, the first side and the second side being located opposite to each other, wherein the first side comprises a cathode and the second side comprises an anode, wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, at least one of the first side and the second side, characterized in
that the junction termination is coated by a passivating coating, the passivating coating comprising a material consisting of a parylene.
3. A power semiconductor device, comprising
a substrate having a first side and a second side, the first side and the second side being located opposite to each other, wherein the first side comprises a cathode and the second side comprises an anode, wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, at least one of the first side and the second side, characterized in
that the junction termination is coated by a passivating coating, the passivating coating comprising a material consisting of a phenol resin comprising polymeric particles.
4. The power semiconductor device according to claim 2 , wherein the parylene is parylene F.
5. The power semiconductor device according to claim 3 , wherein the phenol resin comprises rubber particles.
6. The power semiconductor device according to claim 1 , wherein the passivating coating is at least partly embedded in an encapsulation material.
7. The power semiconductor device according to claim 6 , wherein the encapsulation material comprises a rubber material.
8. The power semiconductor device according to claim 1 , wherein the passivating coating is located on a further coating.
9. The power semiconductor device according to claim 2 , wherein the passivating coating is at least partly embedded in an encapsulation material.
10. The power semiconductor device according to claim 9 , wherein the encapsulation material comprises a rubber material.
11. The power semiconductor device according to claim 3 , wherein the passivating coating is at least partly embedded in an encapsulation material.
12. The power semiconductor device according to claim 11 , wherein the encapsulation material comprises a rubber material.
13. The power semiconductor device according to claim 2 , wherein the passivating coating is located on a further coating.
14. The power semiconductor device according to claim 3 , wherein the passivating coating is located on a further coating.
15. The power semiconductor device according to claim 4 , wherein the passivating coating is located on a further coating.
16. The power semiconductor device according to claim 5 , wherein the passivating coating is located on a further coating.
17. The power semiconductor device according to claim 6 , wherein the passivating coating is located on a further coating.
18. The power semiconductor device according to claim 7 , wherein the passivating coating is located on a further coating.
19. The power semiconductor device according to claim 8 , wherein the passivating coating is located on a further coating.
20. The power semiconductor device according to claim 9 , wherein the passivating coating is located on a further coating.