Light emitting diode component

1. A method, comprising:

providing a light emitting semiconductor structure grown on a growth substrate;

removing at least a portion of the growth substrate; and

forming a multilayer structure arranged to guide light out from a surface of the light emitting semiconductor structure, the multilayer structure covering the surface of the light emitting structure, the multilayer structure comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from the light emitting semiconductor structure, wherein a refractive index, n i , of the i:th layer is greater than a refractive index, n i+1 , of the i+1:th layer, wherein the value of i is selected from the set of positive integers, wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer.

2. The method of claim 1 , wherein the thicknesses of the i+1:th layer and the i:th layer are on the order of hundreds of microns.

3. The method of claim 1 , wherein a thickness of the i:th layer, t i , is given by:

t_i=√A /tan[sin {circumflex over ( )}(−1)( n_ ( i+ 1)/ n_i )]

wherein A is the top surface area of the multilayer structure.

4. The method of claim 1 , further comprising attaching the light emitting semiconductor structure to a mount.

5. The method of claim 1 , wherein removing at least a portion of the growth substrate comprises removing the entire growth substrate.

6. The method of claim 5 , further comprising roughening or patterning a surface of the light emitting semiconductor structure exposed by removing the entire growth substrate.

7. The method of claim 5 , wherein forming a multilayer structure comprises forming the multilayer structure on a surface of the light emitting semiconductor structure exposed by removing the entire growth substrate.

8. The method of claim 5 , further comprising disposing a wavelength converting material on a surface of the light emitting semiconductor structure exposed by removing the entire growth substrate.

9. The method of claim 1 , wherein removing at least a portion of the growth substrate comprises a technique selected from the group consisting of laser-assisted lift off, grinding, chemical-mechanical polishing, and wet etching.

10. The method of claim 1 , further comprising forming a wavelength converting material over the light emitting semiconductor structure.

11. The method of claim 1 , further comprising forming a reflective material on a side surface of the light emitting semiconductor structure.

12. The method of claim 1 , further comprising forming a lens over the light emitting semiconductor structure.

13. The method of claim 3 , wherein the thicknesses of the i+1:th layer and the i:th layer are on the order of hundreds of microns, and the top surface area is in the order of hundred thousand of square micron.

14. A device, comprising:

a light emitting semiconductor structure attached to a mount; and

a multilayer structure disposed over a surface of the light emitting semiconductor structure from which at least a portion of a growth substrate has been removed, the multilayer structure covering the surface of the light emitting structure, the multilayer structure comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from the semiconductor structure, wherein a refractive index, n i , of the i:th layer is greater than a refractive index, n i+1 , of the i+1:th layer ,wherein the value of i is selected from the set of positive integers, wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer.

15. The device of claim 14 , wherein the multilayer structure is disposed in direct contact with the surface of the light emitting semiconductor structure from which at least a portion of a growth substrate has been removed.

16. The device of claim 14 , further comprising a wavelength converting material disposed between the multilayer structure and the surface of the light emitting semiconductor structure from which at least a portion of a growth substrate has been removed.

17. The device of claim 16 , further comprising an additional multilayer structure, wherein the wavelength converting layer is arranged in-between the multilayer structure and the additional multilayer structure.

18. The device of claim 14 , further comprising a lens disposed over the multilayer structure.

19. The device of claim 14 , wherein a first layer, as seen from the light emitting semiconductor structure, of the multilayer structure has a refractive index equal to the refractive index of a top region of the light emitting semiconductor structure.

20. The device of claim 14 , further comprising a side layer arranged adjacent to a side surface of the semiconductor structure.

21. The device of claim 20 , wherein the side layer is selected from the group consisting of a wavelength converting material, a phosphor material, a quantum dot, a fluorescent dye, a light reflecting coating material, high reflectance metals, and high diffuse reflectance fluoropolymers.

22. The device of claim 14 , wherein the thicknesses of the i+1:th layer and the i:th layer are on the order of hundreds of microns, and the multilayer structure has a top surface area is in the order of hundred thousand of square micron.