Method of controlling ion energy distribution using a pulse generator with a current-return output stage
Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
1. A method of processing of a substrate, comprising:
generating a plasma over a surface of a substrate disposed on a substrate support assembly; and
biasing a biasing electrode disposed within the substrate support assembly using a bias generator that is electrically coupled to a generator end of an electrical conductor using a generator coupling assembly, an electrode end of the electrical conductor is electrically coupled to the biasing electrode using an electrode coupling assembly, the bias generator is configured to establish a pulsed voltage waveform at the biasing electrode, and the pulsed voltage waveform comprises a series of repeating cycles,
wherein a waveform within each cycle of the series of repeating cycles has a first portion that occurs during a first time interval and a second portion that occurs during a second time interval,
wherein a positive voltage pulse is only present during the first time interval,
wherein the bias generator comprises:
a pulse generator that is electrically coupled to the generator end of the electrical conductor; and
a current-return output stage, wherein
a first end of the current-return output stage is electrically coupled to the electrical conductor, and
a second end of the current-return output stage is electrically coupled to the ground, and
wherein a current flows from the biasing electrode to ground through the current-return output stage during at least a portion of the second time interval.
2. The method of claim 1 , wherein
the first portion of the waveform further comprises a positive voltage pulse resulting in restoration of a sheath voltage drop, wherein a sheath is formed over a plasma facing surface of the substrate at the end of the first time interval.
3. The method of claim 1 , wherein the first time interval has a time duration of between about 200 ns and about 400 ns.
4. The method of claim 3 , wherein the cycle of the series of repeating cycles has a time duration of between about 2 microseconds (μs) and about 3 μs.
5. The method of claim 1 , wherein the first time interval is less than about 20% of a time duration of a cycle of the series of repeating cycles.
6. The method of claim 1 , wherein the positive voltage pulse is between about 0.1 kilovolts (kV) and about 10 kV.
7. The method of claim 1 , wherein the biasing electrode is spaced apart from a substrate supporting surface of the substrate support assembly by a layer of the dielectric material, and wherein a parallel plate like structure comprising the biasing electrode and the layer of the dielectric material has an effective capacitance of between about 5 nF and about 50 nF.
8. The method of claim 1 , further comprising:
applying a DC voltage to the biasing electrode using a chucking power supply that is electrically coupled to the generator end of the electrical conductor using a supply coupling assembly.
9. The method of claim 8 , wherein the supply coupling assembly comprises a blocking resistor having a resistance more than about 1 MOhm.
10. The method of claim 1 , wherein the electrical conductor further comprises a first electrical conductor and a second electrical conductor that are electrically coupled in series, wherein one end of the first electrical conductor is electrically coupled to an output of the bias generator and one end of the second electrical conductor is electrically coupled to the biasing electrode.
11. The method of claim 1 , wherein a first end of the pulse generator is electrically coupled to the generator end of the electrical conductor, and a second end of the pulse generator is electrically coupled to ground.
12. The method of claim 1 , wherein the generator coupling assembly comprises one of the components selected from the group consisting of a capacitor, a capacitor and an electrical conductor in series, an inductor, and an inductor and an electrical conductor in series.
13. The method of claim 1 , wherein the electrode coupling assembly comprises one of the components selected from the group consisting of a capacitor, a capacitor and an electrical conductor in series, an inductor, and an inductor and an electrical conductor in series.
14. The method of claim 1 , wherein the generator coupling assembly comprises a capacitor having a capacitance in a range of about 40 nF to about 80 nF.
15. A processing chamber, comprising:
a substrate support assembly comprising a biasing electrode that is separated from a substrate supporting surface of the substrate support assembly by a layer of a dielectric material; and
a bias generator that is electrically coupled to a generator end of an electrical conductor using a generator coupling assembly, and an electrode end of the electrical conductor is electrically coupled to the biasing electrode using an electrode coupling assembly,
wherein the bias generator comprises:
a pulse generator that is electrically coupled to the generator end of the electrical conductor; and
a current-return output stage, wherein
a first end of the current-return output stage is electrically coupled to the electrical conductor, and
a second end of the current-return output stage is electrically coupled to the ground, and
wherein the electrical conductor comprises a first electrical conductor and a second electrical conductor that are electrically coupled in series, and wherein one end of the first electrical conductor is electrically coupled to an output of the bias generator using the generator coupling assembly and one end of the second electrical conductor is electrically coupled to the biasing electrode using the electrode coupling assembly.
16. The processing chamber of claim 15 , further comprising:
an inductively coupled plasma source or a capacitively coupled plasma source that is configured to generate a plasma over the substrate supporting surface of the substrate support assembly, and
the voltage source of the pulse generator comprises a substantially constant voltage source.
17. The processing chamber of claim 15 , further comprising:
a chucking power supply that is electrically coupled to the generator end of the electrical conductor using a supply coupling assembly.
18. The processing chamber of claim 17 , wherein the supply coupling assembly comprises a blocking resistor that has a resistance of more than about 1 MOhm.
19. The processing chamber of claim 15 , wherein a parallel plate like structure comprising the biasing electrode and the layer of the dielectric material has an effective capacitance of between about 5 nF and about 50 nF.
20. The processing chamber of claim 15 , wherein dielectric material layer has a thickness between about 0.1 mm and about 1 mm.
21. The processing chamber of claim 15 , wherein a first end of the pulse generator is electrically coupled to the generator end of the electrical conductor, and a second end of the pulse generator is electrically coupled to ground.
22. The processing chamber of claim 15 , wherein the generator coupling assembly comprises one of the components selected from the group consisting of a capacitor, a capacitor and an electrical conductor in series, an inductor, and an inductor and an electrical conductor in series.
23. The processing chamber of claim 15 , wherein the electrode coupling assembly comprises one of the components selected from the group consisting of a capacitor, a capacitor and an electrical conductor in series, an inductor, and an inductor and an electrical conductor in series.
24. A processing chamber, comprising:
a substrate support assembly comprising a biasing electrode that is separated from a substrate supporting surface of the substrate support assembly by a layer of a dielectric material;
a bias generator that is electrically coupled to a generator end of an electrical conductor using a generator coupling assembly, and an electrode end of the electrical conductor is electrically coupled to the biasing electrode using an electrode coupling assembly, wherein the bias generator comprises:
a pulse generator that is electrically coupled to the generator end of the electrical conductor; and
a current-return output stage, wherein
a first end of the current-return output stage is electrically coupled to the electrical conductor, and
a second end of the current-return output stage is electrically coupled to the ground; and
a non-transitory computer readable medium having instructions stored thereon for performing a method of processing a substrate when executed by a processor, the method comprising:
generating a plasma over a surface of a substrate disposed on the substrate support assembly; and
biasing the biasing electrode using the bias generator,
wherein biasing the biasing electrode establishes a pulsed voltage waveform at the biasing electrode, and
wherein
the pulsed voltage waveform comprises a series of repeating cycles,
a waveform within each cycle of the series of repeating cycles has a first portion that occurs during a first time interval and a second portion that occurs during a second time interval, and
a positive voltage pulse is only present during the first time interval,
wherein the electrical conductor comprises a first electrical conductor and a second electrical conductor that are electrically coupled in series, and wherein one end of the first electrical conductor is electrically coupled to an output of the bias generator using the generator coupling assembly and one end of the second electrical conductor is electrically coupled to the biasing electrode using the electrode coupling assembly.
25. The processing chamber of claim 24 , wherein
the positive voltage pulse results in restoration of a sheath voltage drop formed over a plasma facing surface of the substrate at the end of the first time interval, and
a current flows from the biasing electrode to ground through the current-return output stage during at least a portion of the second time interval.
26. The processing chamber of claim 24 , wherein first time interval has a duration of between about 200 ns and about 400 ns.
27. The processing chamber of claim 24 , wherein the first time interval is less than about 20% of a time duration of a cycle of the series of repeating cycles.
28. The processing chamber of claim 24 , wherein the cycle of the series of repeating cycles has a period that has a duration of between about 2 μs and about 3 μs.
29. The processing chamber of claim 24 , wherein a first end of the pulse generator is electrically coupled to the generator end of the electrical conductor, and a second end of the pulse generator is electrically coupled to ground.
30. The processing chamber of claim 24 , wherein the generator coupling assembly comprises one of the components selected from the group consisting of a capacitor, a capacitor and an electrical conductor in series, an inductor, and an inductor and an electrical conductor in series.
31. The processing chamber of claim 24 , wherein the electrode coupling assembly comprises one of the components selected from the group consisting of a capacitor, a capacitor and an electrical conductor in series, an inductor, and an inductor and an electrical conductor in series.
32. The processing chamber of claim 24 , wherein the generator coupling assembly comprises a capacitor having a capacitance in a range of about 40 nF to about 80 nF.