Display device and manufacturing method thereof
View Patent ↗The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.
1. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising:
a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode,
the pixel electrode connects with the source electrode, the drain electrode connects with a video signal line,
a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor layer and the substrate,
the semiconductor layer is formed between the pixel electrode and the substrate,
wherein the drain electrode connects with the semiconductor layer via a first through hole,
the source electrode connects with the semiconductor layer via a second through hole,
the pixel electrode connects with the source electrode via a third through hole,
in the first through hole, a diameter nearer to the substrate is bigger than a diameter nearer to the semiconductor layer,
in the second through hole, a diameter nearer to the substrate is bigger than a diameter nearer to the semiconductor layer,
in the third through hole, a diameter nearer to the substrate is bigger than a diameter nearer to the pixel electrode.
2. The display device according to claim 1 ,
wherein the semiconductor layer is poly-Si, a gate electrode that constitutes the TFT works as a light shield layer for a channel of the TFT.
3. The display device according to claim 1 ,
wherein the semiconductor layer is oxide semiconductor, a gate electrode that constitutes the TFT works as a light shield layer for a channel of the TFT.
4. The display device according to claim 1 ,
wherein the semiconductor layer is oxide semiconductor, the TFT is a dual gate type TFT in that a gate electrode is formed at an upper side and at a lower side of the oxide semiconductor.
5. The display device according to claim 1 ,
wherein the substrate is made of polyimide.
6. The display device according to claim 1 ,
wherein the display device is a liquid crystal display device.
7. The display device according to claim 1 ,
wherein the display device is an organic EL display device.
8. A liquid crystal display device comprising: a first substrate having a pixel electrode and a TFT, and a liquid crystal sandwiched between the first substrate and a second substrate,
wherein an alignment film is formed on a surface that contacts the liquid crystal at each of the first substrate and the second substrate,
the alignment film is not formed in a through hole that connects the pixel electrode and the TFT,
wherein a source of a semiconductor layer connects with a source electrode, a drain of the semiconductor layer connects with a drain electrode, the pixel electrode connects with the source electrode, the drain electrode connects with a video signal line,
a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor layer and the first substrate, and
wherein the drain electrode connects with the semiconductor layer via a first through hole,
the source electrode connects with the semiconductor layer via a second through hole,
the pixel electrode connects with the source electrode via a third through hole,
in the first through hole, a diameter nearer to the first substrate is bigger than a diameter nearer to the semiconductor layer,
in the second through hole, a diameter nearer to the first substrate is bigger than a diameter nearer to the semiconductor layer,
in the third through hole, a diameter nearer to the first substrate is bigger than a diameter nearer to the pixel electrode.
9. The display device according to claim 8 ,
wherein the TFT includes a semiconductor layer and a gate electrode,
the semiconductor layer is poly-Si, the gate electrode works as a light shield layer for a channel of the TFT.
10. The display device according to claim 8 ,
wherein the TFT includes a semiconductor layer and a gate electrode, the semiconductor layer is oxide semiconductor, the gate electrode works as a light shield layer for a channel of the TFT.
11. The display device according to claim 8 ,
wherein the first substrate is made of polyimide.