IP Library › Patent Application 15978514
Patent Application
App. No. 15/978,514

HIGH GAIN RF POWER AMPLIFIER WITH NEGATIVE CAPACITOR

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Quick Facts
Patent No.
US None
App. No.
15/978,514
Abstract

A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.

Claims (25)

1 . A radio frequency (RF) power amplifier circuit for a predefined operating frequency band, the RF power amplifier circuit including an input and an output, comprising:

a power amplifier transistor with a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by an inductance;

a first capacitor connected to the third terminal of the power amplifier transistor; and

a negative capacitance circuit connected to the third terminal in series with the first capacitor;

wherein the negative capacitance circuit and the first capacitor define a series resonance at the predefined operating frequency band, the inductance of the third terminal being shunted by the negative capacitance circuit and the first capacitor.

2 . The RF power amplifier circuit of claim 1 , wherein the negative capacitance circuit and the first capacitor have an equivalent impedance lower than 0.5 Ohm.

3 . The RF power amplifier circuit of claim 1 , wherein the negative capacitance circuit is connected to ground.

4 . The RF power amplifier circuit of claim 1 , wherein the negative capacitance circuit includes:

an operational amplifier with a positive input, a negative input, and an output;

a first negative capacitance circuit capacitor connected to the negative input and the output of the operational amplifier;

a first negative capacitance circuit resistor connected to the positive input and the output of the operational amplifier;

a second negative capacitance circuit resistor connected to the positive input of the operational amplifier.

5 . The RF power amplifier circuit of claim 4 , wherein the second negative capacitance circuit resistor is connected to ground.

6 . The RF power amplifier circuit of claim 4 , wherein the negative capacitance circuit includes a negative capacitance circuit inductor connected to the second negative capacitance circuit resistor.

7 . The RF power amplifier circuit of claim 6 , wherein the negative capacitance circuit inductor is a trace on a semiconductor die.

8 . The RF power amplifier circuit of claim 1 , wherein the power amplifier transistor, the first capacitor, and the negative capacitance circuit are disposed within an interior region of a semiconductor die.

9 . The RF power amplifier circuit of claim 1 , wherein the power amplifier transistor is an n-type metal oxide semiconductor transistor, the first terminal being a gate, the second terminal being a drain, and a third terminal being a source, the third terminal being connected to a body of the power amplifier transistor.

10 . The RF power amplifier circuit of claim 1 , wherein the power amplifier transistor is a bipolar junction transistor, the first terminal being a base, the second terminal being a collector, and the third terminal being an emitter.

11 . The RF power amplifier circuit of claim 1 , further comprising:

an input matching circuit connected to the input and the first terminal of the power amplifier transistor; and

an output matching circuit connected to the output and the second terminal of the power amplifier transistor.

12 . The RF power amplifier circuit of claim 1 , further comprising:

a control voltage source connected to the first terminal of the power amplifier transistor and defining a bias point thereof.

13 . The RF power amplifier circuit of claim 1 , further comprising:

a bias voltage source connected to the second terminal of the power amplifier transistor.