Wideband matching co-design of transmit/receive (T/R) switch and receiver frontend for a broadband MIMO receiver for millimeter-wave 5G communication
According to one embodiment, a radio frequency (RF) frontend circuit includes a RF receiver, a transceiver (or transmit/receive) switch, and a high-order inductive degeneration matching network coupled in between the transceiver switch and an input port of the RF receiver, where the high-order inductive degeneration matching network matches an impedance for the RF receiver and the transceiver switch and the high-order inductive degeneration matching network is to resonate at a plurality of predetermined resonant frequencies.
1. A radio frequency (RF) frontend circuit, comprising:
an RF receiver;
a transceiver switch; and
a high-order inductive degeneration matching network coupled in between the transceiver switch and an input port of the RF receiver, wherein the high-order inductive degeneration matching network matches impedance for the RF receiver and the transceiver switch and the high-order inductive degeneration matching network is to resonate at a plurality of predetermined resonant frequencies, wherein the high-order inductive degeneration matching network comprises a capacitor in series with an inductive transmission line to resonate at a first predetermined resonant frequency.
2. The RF frontend circuit of claim 1 , wherein a first terminal of the capacitor of the matching network is coupled to an input port of the matching network and a second terminal of the capacitor is coupled to a first end of the inductive transmission line and a second end of the inductive transmission line is coupled to the output port of the matching network.
3. The RF frontend circuit of claim 1 , wherein the capacitor in series comprises a transmission line having a gap.
4. The RF frontend circuit of claim 1 , wherein the inductive transmission line is a microstrip line.
5. The RF frontend circuit of claim 2 , wherein the matching network further comprises a first inductor coupled in between the input port of the matching network and a ground plane and the first inductor is to resonate with off-switch parasitic capacitances seen at the output port of transceiver switch at a second predetermined resonant frequency.
6. The RF frontend circuit of claim 5 , wherein the first inductor of the matching network comprises an on-chip spiral line.
7. The RF frontend circuit of claim 6 , wherein the matching network further comprises a second inductor coupled in between the output port of the matching network and an input port of the RF receiver so the second inductor resonates at a third predetermined resonant frequency with parasitic capacitances seen at the input port of the RF receiver.
8. The RF frontend circuit of claim 7 , wherein the second inductor of the matching network comprises an on-chip spiral line.
9. A mobile device, comprising:
an antenna;
a radio frequency (RF) frontend circuit coupled to the antenna, wherein the RF frontend circuit includes:
an RF receiver,
a transceiver switch, and
a high-order inductive degeneration matching network coupled in between the transceiver switch and an input port of the RF receiver, wherein the high-order inductive degeneration matching network matches impedance for the RF receiver and the transceiver switch and the high-order inductive degeneration matching network is to resonate at a plurality of predetermined resonant frequencies, wherein the high-order inductive degeneration matching network comprises a capacitor in series with an inductive transmission line to resonate at a first predetermined resonant frequency; and
a baseband processor coupled to the RF frontend circuit.
10. The mobile device of claim 9 , wherein a first terminal of the capacitor of the matching network is coupled to an input port of the matching network and a second terminal of the capacitor is coupled to a first end of the inductive transmission line and a second end of the inductive transmission line is coupled to the output port of the matching network.
11. The mobile device of claim 9 , wherein the capacitor in series comprises a transmission line having a gap.
12. The mobile device of claim 9 , wherein the inductive transmission line is a microstrip line.
13. The mobile device of claim 10 , wherein the matching network further comprises a first inductor coupled in between the input port of the matching network and a ground plane and the first inductor is to resonate with off-switch parasitic capacitances seen at the output port of transceiver switch at a second predetermined resonant frequency.
14. The mobile device of claim 13 , wherein the first inductor of the matching network comprises an on-chip spiral line.
15. The mobile device of claim 14 , wherein the matching network further comprises a second inductor coupled in between the output port of the matching network and an input port of the RF receiver so the second inductor resonates at a third predetermined resonant frequency with parasitic capacitances seen at the input port of the RF receiver.
16. The mobile device of claim 15 , wherein the second inductor of the matching network comprises an on-chip spiral line.