IP Library Granted Patent US 10,734,546
Granted Patent B2
US 10,734,546 · App. 15/984,144 · Granted Aug 4, 2020

Coated semiconductor nanocrystals and products including same

Inventors: Craig Breen (Somerville, MA); Wenhao Liu (Billerica, MA)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L33/06C09D11/52C09K11/02C09K11/565C09K11/595C09K11/883H01L21/0256H01L21/02406H01L21/02422H01L21/02521H01L21/02557H01L21/02601H01L21/02628H01L29/151H01L29/225H01L33/0029H01L33/28B82Y20/00B82Y30/00H01L33/502Y10S977/774Y10S977/95
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Quick Facts
Patent No.
US 10,734,546
App. No.
15/984,144
Granted
Aug 4, 2020
Kind
B2
Abstract

A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. Products including quantum dots described herein are also disclosed.

Claims (29)

1. A quantum dot comprising:

a core quantum dot comprising a Group II-VI semiconductor material, an alloy thereof, or a mixture thereof;

a first semiconductor shell consisting of ZnS or ZnSe; and

a second semiconductor shell comprising a second semiconductor material over the first semiconductor shell, wherein the second semiconductor material is different from the first semiconductor shell,

the second semiconductor material comprises a ternary or quaternary alloy of a Group II-VI compound, and wherein the core quantum dot comprises MX wherein M is cadmium, zinc, or a mixture thereof and X is sulfur, selenium, tellurium, or a combination thereof.

2. The quantum dot of claim 1 , wherein the quantum dot comprises a third shell comprising a third semiconductor material, wherein the third shell has a bandgap that is the same as or greater than that of the first shell.

3. The quantum dot of claim 1 , wherein the core quantum dot comprises zinc.

4. The quantum dot of claim 1 , wherein the core quantum dot comprises ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, or a mixture or an alloy thereof, and the second semiconductor material comprises zinc and sulfur.

5. The quantum dot of claim 1 wherein the first shell has a bandgap that is greater than that of the core quantum dot.

6. The quantum dot of claim 1 , wherein the first shell consists of ZnSe and the second shell comprises zinc and sulfur.

7. The quantum dot of claim 1 wherein the first semiconductor shell has a thickness from about 1 to about 20 monolayers.

8. The quantum dot of claim 1 wherein the second semiconductor shell has a thickness from about 1 to about 25 monolayers.

9. Quantum dots comprising a quantum dot core with a first coating consisting of a zinc chalcogenide on an outer surface of the quantum dot core and a second coating comprising a second semiconductor material and disposed over the first coating,

wherein the quantum dot core comprises a Group II-VI semiconductor material, an alloy thereof, or a mixture thereof;

wherein the zinc chalcogenide is ZnS or ZnSe,

wherein the second semiconductor material is different from the zinc chalcogenide of the first coating, and

the second semiconductor material comprises a ternary or quaternary alloy of a Group II-VI compound, and wherein the quantum dot core comprises MX wherein M is cadmium, zinc, or a mixture thereof and X is sulfur, selenium, tellurium, or a combination thereof.

10. The quantum dots of claim 9 , wherein the quantum dot core comprises zinc.

11. The quantum dots of claim 9 , wherein the quantum dot core comprises ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, or a mixture or an alloy thereof, and the second semiconductor material comprises zinc and sulfur.

12. The quantum dots of claim 9 , wherein the quantum dot core comprises a material different from the first coating.

13. The quantum dots of claim 9 , wherein the first coating has a bandgap that is greater than that of the quantum dot core.

14. The quantum dots of claim 9 , wherein the first coating consists of ZnSe and the second semiconductor material comprises zinc and sulfur.

15. The quantum dots of claim 9 , wherein the quantum dots has no more than 15% rms deviation from mean diameter.

16. The quantum dots of claim 9 , wherein the quantum dots has no more than 10% rms deviation from mean diameter.

17. The quantum dots of claim 9 , wherein the quantum dots has a full width half maximum (FWHM) of emission peak within a range of less than or equal to about 40 nm.

18. A ink comprising the quantum dots of claim 9 and a liquid vehicle, wherein the liquid vehicle comprises an organic solvent and the quantum dots are configured to be dispersed in the organic solvent.

19. The ink of claim 17 , wherein the liquid vehicle comprises a composition including one or more functional groups or units that are capable of being cross-linked.

20. An electronic device comprising the quantum dots of claim 9 .

21. The quantum dot of claim 9 , wherein the quantum dot comprises a third coating comprising a third semiconductor material, wherein the third coating has a bandgap that is the same as or greater than that of the first coating.

Continuity (13)
Continuation 14521225 · Oct 22, 2014
Continuation PCTUS2012066158 · Nov 20, 2012
Continuation In Part 14451125 · Aug 4, 2014
Continuation PCTUS2012066154 · Nov 20, 2012
Continuation In Part 14284265 · May 21, 2014
Continuation PCTUS2012066145 · Nov 20, 2012
Provisional Application 61636702 · Apr 22, 2012
Provisional Application 61595116 · Feb 5, 2012
Provisional Application 61678902 · Aug 2, 2012
Provisional Application 61562463 · Nov 22, 2011
Provisional Application 61636701 · Apr 22, 2012
Provisional Application 61678883 · Aug 2, 2012
Related Publication 20180342647A1 · Nov 29, 2018