Sensing apparatus
A sensing apparatus includes a sensing device having a hetero-junction structure, a light coupler connected to the sensing device and a readout device connected to the light coupler.
1. A sensing apparatus, comprising:
a sensing device comprising a heater, a hetero-junction structure, and a passivation layer sandwiched by the heater and the hetero-junction structure;
a light coupler optically connected to the sensing device; and
a readout device configured to read a current signal passing therethrough, and connected to the light coupler.
2. The sensing apparatus according to claim 1 , wherein the light coupler comprises an LED connected with the sensing device.
3. The sensing apparatus according to claim 2 , wherein the light coupler comprises a light receiver optically coupled to the LED.
4. The sensing apparatus according to claim 2 , wherein the light coupler comprises a light receiver and a light guide physically connected between the LED and the light receiver.
5. The sensing apparatus according to claim 1 , further comprising an amplifier connected with the readout device.
6. The sensing apparatus according to claim 1 , further comprising a sensing area located on a trench of the sensing device.
7. A sensing apparatus, comprising:
a sensing device comprising a hetero-junction structure, a heater, a sensing area located on the hetero-junction structure, and a passivation layer sandwiched by the heater and the hetero-junction structure;
a light coupler having an LED connected to the sensing device;
a first capacitor connected to the LED;
a resistor connected to the light coupler, and a second capacitor connected to the resistor.
8. The sensing apparatus according to claim 7 , further comprising a substrate below the hetero-junction structure.
9. The sensing apparatus according to claim 7 , further comprising a functionalization layer on the hetero-junction structure.
10. The sensing device according to claim 7 , further comprising an insulating layer, and an electrode separated from the functionalization layer by the insulating layer.
11. The sensing device according to claim 10 , wherein the electrode is formed on the hetero-junction structure.
12. The sensing device according to claim 7 , further comprising an insulating layer connected with the hetero-junction structure.