INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES

1 . A light emitting device comprising:

a gallium- and indium-containing nitride substrate; an n-type layer overlying the substrate;

an active layer overlying then-type layer; and a p-type layer overlying the active layer;

wherein the gallium- and indium-containing nitride substrate comprises a thickness greater than 4 μm and an InN composition greater than 0.5%.

2 . The light emitting device of claim 1 , wherein the substrate is characterized by a wurtzite crystal structure and a crystallographic orientation of a large area surface within about 5 degrees of one of the (0001) +c-plane and the (000-1) −c-plane.

3 . The light emitting device of claim 1 , wherein the substrate is substantially crack-free.

4 . The light emitting device of claim 1 , wherein the gallium- and indium-containing nitride substrate is relaxed, having a-axis and c-axis lattice constants within 0.1% of the equilibrium lattice constants for a specific indium-containing nitride composition.

5 . The light emitting device of claim 1 , wherein the gallium- and indium-containing nitride substrate is relaxed, having a-axis and c-axis lattice constants within 0.01% of the equilibrium lattice constants for a specific indium-containing nitride composition.

6 . The light emitting device of claim 1 , wherein the gallium- and indium-containing nitride substrate is relaxed, having a-axis and c-axis lattice constants within 0.001% of the equilibrium lattice constants for a specific indium-containing nitride composition.

7 . The light emitting device of claim 1 , further comprising at least one of, a lamp, a luminaire, and a lighting system, wherein the light emitting device is incorporated into the lamp, the luminaire, or the lighting system.

8 . A light emitting device comprising: a substrate;

an n-type layer overlying the substrate;

an active layer overlying the n-type layer; and a p-type layer overlying the active layer;

each of the n-type layer, the active layer, and the p-type layer is characterized by an in-plane lattice constant, wherein each of the in-plane lattice constants is greater, by at least 1%, than an in-plane lattice constant of similarly oriented GaN.

9 . The light emitting device of claim 8 , wherein the substrate is characterized by a wurtzite crystal structure and a crystallographic orientation of a large area surface within about 5 degrees of one of the (0001) +c-plane and the (000-1) −c-plane.

10 . The light emitting device of claim 8 , wherein the substrate is substantially crack-free.

11 . The light emitting device of claim 8 , wherein the substrate comprises gallium- and indium-containing nitride and is relaxed, having a-axis and c-axis lattice constants within 0.1% of the respective equilibrium lattice constants for a specific indium-containing nitride composition.

12 . The light emitting device of claim 8 , wherein the substrate comprises gallium- and indium-containing nitride and is relaxed, having a-axis and c-axis lattice constants within 0.01% of the respective equilibrium lattice constants for a specific indium-containing nitride composition.

13 . The light emitting device of claim 8 , wherein the substrate comprises gallium- and indium-containing nitride and is relaxed, having a-axis and c-axis lattice constants within 0.001% of the respective equilibrium lattice constants for a specific indium-containing nitride composition.

14 . The light emitting device of claim 8 , further comprising at least one of, a lamp, a luminaire, and a lighting system, wherein the light emitting device is incorporated into the lamp, the luminaire, or the lighting system.

15 . A method of fabricating a light emitting

device comprising: providing a substrate;

selecting an InN composition;

fabricating an InGaN template by growing an InGaN epitaxial layer having the selected InN composition on the substrate by hydride vapor phase epitaxy; and

growing an optoelectronic device structure on the InGaN template.

16 . The method of claim 15 , wherein the growing of the InGaN epitaxial layer is characterized by a crystallographic orientation within about 5 degrees of [000-1].

17 . The method of claim 15 , wherein the substrate is substantially indium-free.

18 . The method of claim 15 , wherein the substrate comprises wurtzite GaN.

19 . The method of claim 15 , further comprising patterning the substrate to facilitate atom transport along glide planes to form misfit dislocations.

20 . The method of claim 15 , wherein growing the InGaN epitaxial layer having the selected InN composition on the substrate is performed by growing a series of graded layers having an intermediate InN composition.

21 - 25 . (canceled)