VCSELs having mode control and device coupling
A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.
1. A vertical cavity surface emitting laser (VCSEL) comprising:
an active region configured to emit light;
a blocking region over or under the active region, the blocking region defining a plurality of channels therein;
a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region;
a photodetector;
a waveguide extending between and optically coupling the active region and the photodetector;
a top electrical contact; and
a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores,
wherein the plurality of conductive channel cores are located between and electrically coupled with the top electrical contact and bottom electrical contact, and optically coupled so as to form a common light emitter that emits light from the plurality of conductive channel cores.
2. The VCSEL of claim 1 , wherein the conductive channel core has a diameter of about 0.5 microns to about 10 microns.
3. The VCSEL of claim 1 , comprising a plurality of different sets of the plurality of the conductive channel cores in a common blocking region, the plurality of conductive channel cores of each set are electrically coupled with a common electrical source and optically coupled so as to form a common light emitter that emits light from the plurality of conductive channel cores, wherein the conductive channel cores of different sets are electronically isolated and operated separately.
4. The VCSEL of claim 1 , comprising:
the blocking region having a first thickness; and
the plurality of conductive channel cores having a second thickness that is different than the first thickness, wherein the blocking region is defined by having an implant and the plurality of conductive channel cores are devoid of the implant, wherein the blocking region is lateral to the plurality of conductive channel cores, the blocking region and plurality of conductive channel cores being an isolation region.
5. The VCSEL of claim 4 , wherein the implant is silicon or oxygen.
6. The VCSEL of claim 1 , wherein the plurality of conductive channel cores includes two or more conductive channel cores in a pattern for a single non-fundamental mode.
7. The VCSEL of claim 6 , wherein the pattern is a Languerre-Gaussian profile, a Hermite-Gaussian profile, or an Ince-Gaussian profile.
8. The VCSEL of claim 1 , wherein, wherein the waveguide has a rectangular-shaped profile, a bowtie-shaped profile, or a diamond-shaped profile.
9. The VCSEL of claim 1 , wherein the photodetector includes a second active region configured for detecting light.
10. The VCSEL of claim 9 , wherein the photodetector includes a second blocking region over or under the second active region and lateral of the blocking region, the second blocking region defining one or more second channels therein.
11. The VCSEL of claim 10 , wherein the photodetector includes one or more second conductive channel cores in the one or more second channels of the second blocking region, wherein the one or more second conductive channel cores and second blocking region form a second isolation region lateral of the first isolation region.
12. A vertical cavity surface emitting laser (VCSEL) comprising:
a laser emitter having:
a first active region configured to emit light;
a first blocking region over or under the first active region, the first blocking region defining one or more first channels therein; and
one or more first conductive channel cores in the one or more first channels of the first blocking region, wherein the one or more first conductive channel cores and first blocking region form a first isolation region; and
a photodetector configured as a monitor having:
a second active region configured for detecting light;
a second blocking region over or under the second active region and lateral of the first blocking region, the second blocking region defining one or more second channels therein; and
one or more second conductive channel cores in the one or more second channels of the second blocking region, wherein the one or more second conductive channel cores and second blocking region form a second isolation region lateral of the first isolation region; and
a waveguide extending between and optically coupling the laser emitter and photodetector.
13. The VCSEL of claim 12 , wherein:
the waveguide extends through the first isolation region and second isolation region between the laser emitter and photodetector;
the waveguide extends through a region above the first isolation region and second isolation region between the laser emitter and photodetector; and/or
the waveguide extends through a region below the first isolation region and second isolation region between the laser emitter and photodetector.
14. The VCSEL of claim 12 , wherein, wherein the waveguide has a rectangular-shaped profile, a bowtie-shaped profile, or a diamond-shaped profile.
15. The VCSEL of claim 12 , wherein the one or more first conductive channel cores have a diameter of about 0.5 microns to about 10 microns.
16. The VCSEL of claim 12 , comprising a plurality of different sets of the one or more first conductive channel cores in a common first blocking region, the one or more first conductive channel cores of each set are electrically coupled with a common electrical source and optically coupled so as to form a common light emitter that emits light from the one or more first conductive channel cores, wherein the one or more first conductive channel cores of the different sets are electronically isolated and operated separately.
17. The VCSEL of claim 12 , comprising:
the first blocking region having a first thickness; and
the one or more first conductive channel cores having a second thickness that is different than the first thickness, wherein the first blocking region is defined by having an implant and the one or more first conductive channel cores are devoid of the implant, wherein the first blocking region is lateral to the one or more first conductive channel cores, the first blocking region and one or more first conductive channel cores being an isolation region.
18. The VCSEL of claim 17 , wherein the implant is silicon or oxygen.
19. The VCSEL of claim 12 , wherein the one or more first conductive channel cores includes a plurality of conductive channel cores in a pattern for a single non-fundamental mode.
20. The VCSEL of claim 19 , wherein the non-fundamental mode pattern is a Languerre-Gaussian profile, a Hermite-Gaussian profile, or an Ince-Gaussian profile.