Power light emitting diode and method with uniform current density operation
A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
1. An LED optical device comprising:
plurality of dies, each die of said plurality comprising a bulk GaN substrate and an active region over said substrate, said active region having an active region area,
said plurality of dies defining a cumulative active region area, said cumulative active region area being the total of said active region area for said each die for all of said plurality of dies; a mixture comprising wavelength-converting material overlaying said plurality of dies to define a light-emitting outer surface, said light-emitting outer surface having a light-emitting outer surface area; and
wherein a ratio of said light-emitting outer surface area to said cumulative active region area is greater than 10.
2. The LED of claim 1 , wherein said ratio is from 10:1 to 100:1.
3. The LED of claim 1 , wherein said LED is configured to emit at least 300 lumens of white light from said light-emitting outer surface.
4. The LED of claim 1 , wherein said LED is configured to operate at a power density great than 2 W/mm2 of active region.
5. The LED of claim 1 , wherein said active region emits light having a wavelength of 405 nm to 430 nm, 385 nm to 415 nm, 385 nm to 480 nm, 390 nm to 430 nm, 390-415 nm, 415-440 nm, or 440-470 nm.
6. The LED of claim 1 , wherein said plurality of dies is an array of dies.
7. The LED of claim 1 , wherein a first portion of said plurality of dies s emits light having a wavelength of 405 nm to 430 and a second portion of said plurality of dies emits light having a wavelength of 440-470 nm.
8. The LED of claim 1 , wherein a first portion of said plurality of dies emits violet light and a second portion of said plurality of dies emits blue light.
9. The LED of claim 1 , said each die has an active region area of about 250 um×250 um.
10. An LED optical device comprising:
plurality of dies, each die of said plurality comprising a bulk GaN substrate and an active region over said substrate, said active region having an active region area, said plurality of dies defining a cumulative active region area, said cumulative active region area being the total of said active region area for said each die for all of said plurality of dies;
a mixture comprising wavelength-converting material overlaying said plurality of dies die to define a light-emitting outer surface, said light-emitting outer surface having a light-emitting outer surface area;
wherein a first portion of said plurality of dies emits violet light and a second portion of said plurality of dies emits blue light; and
wherein a ratio of said light-emitting outer surface area to said cumulative active region area is greater than 5.
11. The LED of claim 10 , wherein said ratio is from 10:1 to 100:1.
12. The LED of claim 10 , wherein said LED is configured to emit at least 300 lumens of white light from said light-emitting outer surface.
13. The LED of claim 10 , wherein said LED is configured to operate at a power density great than 2 W/mm2 of active region.
14. The LED of claim 10 , wherein said plurality of dies is an array of dies.
15. The LED of claim 10 , said each die has an active region area of about 250 um×250 um.