Wideband low noise amplifier (LNA) with a reconfigurable bandwidth for millimeter-wave 5G communication
According to one embodiment, a low noise amplifier (LNA) circuit includes a first stage which includes: a first transistor; a second transistor coupled to the first transistor; a first inductor coupled in between an input port and a gate of the first transistor; and a second inductor coupled to a source of the first transistor, where the first inductor and the second inductor resonates with a gate capacitance of the first transistor for a dual-resonance. The LNA circuit includes a second stage including a third transistor; a fourth transistor coupled between the third transistor and an output port; and a passive network coupled to a gate of the third transistor. The LNA circuit includes a capacitor coupled in between the first and the second stages, where the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.
1. A low noise amplifier (LNA) circuit comprising:
a first amplifier stage, comprising:
a first transistor;
a second transistor coupled to the first transistor;
a first inductor coupled in between an input port and a gate of the first transistor; and
a second inductor coupled to a source of the first transistor, wherein the first inductor and the second inductor resonates with a gate capacitance of the first transistor respectively for a dual-resonance input matching;
a second amplifier stage, comprising:
a third transistor;
a fourth transistor coupled between the third transistor and an output port; and
a passive network coupled to a gate of the third transistor; and
a capacitor coupled in between the first and the second amplifier stages, wherein the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage; and
a transformer-based balun coupled between the output port and the fourth transistor.
2. The LNA circuit of claim 1 , further comprising a third inductor coupled in between the first transistor and the second transistor for a C-L-C transmission line for the first amplifier stage to deliver a signal from the first transistor to the second transistor.
3. The LNA circuit of claim 1 , further comprising a variable gain controller coupled to the first amplifier stage to control a gain of the first amplifier stage.
4. The LNA circuit of claim 1 , further comprising a fourth inductor coupled to a drain of the second transistor to resonate with a drain capacitance of the second transistor at a first resonance.
5. The LNA circuit of claim 1 , wherein the passive network comprises a fifth inductor in parallel with a first resistor.
6. The LNA circuit of claim 1 , further comprising a sixth inductor coupled in between the third transistor and the fourth transistor for a C-L-C transmission line for the second amplifier stage to deliver an amplifier signal from the third transistor to the fourth transistor.
7. The LNA circuit of claim 1 , wherein a primary winding of a transformer of the transformer-based balun is to resonate with a drain capacitance of the fourth transistor at a second resonance.
8. The LNA circuit of claim 1 , further comprising a first capacitor bank coupled in parallel with the first inductor.
9. The LNA circuit of claim 8 , further comprising a second capacitor bank coupled in parallel with the fourth inductor.
10. The LNA circuit of claim 9 , further comprising a third capacitor bank coupled in parallel with the capacitor.
11. The LNA circuit of claim 10 , further comprising a fourth capacitor bank coupled in parallel with the primary winding of the transformer of the transformer-based balun.
12. The LNA circuit of claim 11 , wherein the first, the second, the third, and the fourth capacitor banks are programmable capacitors.
13. The LNA circuit of claim 11 , wherein the first, the second, the third, and the fourth capacitor banks are digitally tunable capacitors.
14. A RF receiver circuit comprising an LNA circuit to amplify a received signal, the LNA circuit comprising:
a first amplifier stage, comprising:
a first transistor;
a second transistor coupled to the first transistor;
a first inductor coupled in between an input port and a gate of the first transistor;
a first capacitor bank coupled in parallel with the first inductor; and
a second inductor coupled to a source of the first transistor, wherein the first inductor and the second inductor resonates with a gate capacitance of the first transistor respectively for a dual-resonance input matching;
a second amplifier stage, comprising:
a third transistor;
a fourth transistor coupled between the third transistor and an output port; and
a passive network coupled to a gate of the third transistor; and
a capacitor coupled in between the first and the second amplifier stages, wherein the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.
15. The RF receiver circuit of claim 14 , further comprising a third inductor coupled in between the first transistor and the second transistor for a C-L-C transmission line for the first amplifier stage to deliver an amplifier signal from the first transistor to the second transistor.
16. The RF receiver circuit of claim 14 , further comprising a variable gain controller coupled to the first amplifier stage to control a gain of the first amplifier stage.
17. The RF receiver circuit of claim 14 , further comprising a fourth inductor coupled to the second transistor to resonate with a drain capacitance of the second transistor at a first resonance.
18. The RF receiver circuit of claim 14 , wherein the passive network comprises a fifth inductor in parallel with a first resistor.
19. The RF receiver circuit of claim 14 , further comprising a sixth inductor coupled in between the third transistor and the fourth transistor for a C-L-C transmission line for the second amplifier stage to deliver an amplifier signal from the third transistor to the fourth transistor.
20. A radio frequency (RF) frontend circuit comprising an RF receiver to receive an RF signal, the RF receiver comprising an LNA to amplifier the received RF signal, the LNA comprising:
a first amplifier stage, comprising:
a first transistor;
a second transistor coupled to the first transistor;
a first inductor coupled in between an input port and a gate of the first transistor; and
a second inductor coupled to a source of the first transistor, wherein the first inductor and the second inductor resonates with a gate capacitance of the first transistor respectively for a dual-resonance input matching;
a second amplifier stage, comprising:
a third transistor;
a fourth transistor coupled between the third transistor and an output port; and
a passive network coupled to a gate of the third transistor, the passive network having a fifth inductor in parallel with a first resistor; and
a capacitor coupled in between the first and the second amplifier stages, wherein the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.