Laser anneal process
A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.
1. A method comprising:
forming a doped region on a semiconductor substrate with a first process gas having a dopant gas, wherein the doped region comprises an impurity therein; and
performing a laser anneal process to the doped region with a second process gas having the dopant gas, wherein the dopant gas and the impurity comprise the same chemical element, and a partial pressure of the dopant gas during forming the doped region is less than a partial pressure of the dopant gas during the laser anneal process.
2. The method of claim 1 , wherein the laser anneal process is performed under a process pressure greater than about 1 atm.
3. The method of claim 1 , further comprising:
introducing the dopant gas into a chamber where the semiconductor substrate is, such that the partial pressure of the dopant gas in the chamber increases.
4. The method of claim 1 , further comprising:
reducing a volume of a chamber where the semiconductor substrate is, such that the partial pressure of the dopant gas in the chamber increases.
5. The method of claim 1 , further comprising:
raising a temperature in a chamber where the semiconductor substrate is, such that the partial pressure of the dopant gas in the chamber increases.
6. The method of claim 1 , wherein the partial pressure of the dopant gas during the laser anneal process is in a range from about 1E-1 torr to about 10 torr.
7. The method of claim 1 , wherein the dopant gas comprises n-type dopants.
8. The method of claim 1 , wherein the doped region comprises Si, Ge, or combinations thereof.
9. A method comprising:
introducing a dopant gas into a chamber;
forming a doped source/drain region on a semiconductor substrate; and
performing a laser anneal process on the doped source/drain region under a process pressure greater than about 1 atm, wherein the laser anneal process is performed in the chamber, and a partial pressure of the dopant gas during the laser anneal process is in a range from about 1E-1 torr to about 10 torr.
10. The method of claim 9 , wherein the doped source/drain region has an impurity therein, and the dopant gas and the impurity comprise the same chemical element.
11. The method of claim 9 , wherein a partial pressure of a dopant during forming the doped source/drain region is less than the partial pressure of the dopant gas during the laser anneal process.
12. The method of claim 9 , further comprising:
reducing a volume of the chamber where the laser anneal process is performed prior to, during, or both prior to and during the laser anneal process.
13. The method of claim 9 , further comprising:
raising a temperature in the chamber where the laser anneal process is performed prior to, during, or both prior to and during the laser anneal process.
14. A method comprising:
forming source/drain regions on a substrate in a chamber;
introducing a dopant gas above the source/drain region in the chamber, wherein the dopant gas comprises gas-phase dopants therein;
stopping the introducing of the dopant gas, then increasing a partial pressure of the gas-phase dopants in the chamber; and
annealing the source/drain regions by a laser through the gas-phase dopants.
15. The method of claim 14 , wherein increasing the partial pressure of the gas-phase dopants comprises:
increasing a number of moles of the gas-phase dopants in the chamber.
16. The method of claim 14 , wherein increasing the partial pressure of the gas-phase dopants comprises:
decreasing a volume of the chamber.
17. The method of claim 16 , wherein decreasing the volume of the chamber comprises:
lifting a stage in the chamber, wherein the substrate is on the stage.
18. The method of claim 14 , wherein increasing the partial pressure of the gas-phase dopants comprises:
increasing a temperature of the chamber.
19. The method of claim 14 , wherein increasing the partial pressure of the gas-phase dopants in the chamber is performed prior to annealing the source/drain regions.
20. The method of claim 14 , wherein annealing the source/drain regions by the laser is performed under the increased partial pressure of the gas-phase dopants.