Optical semiconductor device, optical subassembly, and optical module
An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In 1-x Al x P layers, the Al composition x of each of the one or more p-type In 1-x Al x P layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.
1. An optical semiconductor device, comprising:
an InP substrate;
an active layer disposed above the InP substrate;
a semiconductor layer of a first conductivity type disposed below the active layer; and
a clad layer of a second conductivity type disposed above the active layer, wherein
the clad layer of the second conductivity type includes one or more In 1-x Al x P layers of the second conductivity type,
an Al composition x of each of the one or more In 1-x Al x P layers of the second conductivity type is equal to or greater than a value corresponding to a doping concentration of a dopant of the second conductivity type, and
an absolute value of an average strain amount of a whole of the clad layer of the second conductivity type is equal to or less than an absolute value of a critical strain amount obtained by Matthews' relational expression, using an entire layer thickness of the whole of the clad layer of the second conductivity type as a critical layer thickness.
2. The optical semiconductor device according to claim 1 , wherein
the clad layer of the second conductivity type includes one In 1-x Al x P layer of the second conductivity type,
an Al composition x of the one In 1-x Al x P layer of the second conductivity type is equal to or greater than a value corresponding to a doping concentration of the dopant of the second conductivity type in the one In 1-x Al x P layer of the second conductivity type, and
an absolute value of a strain amount of the one In 1-x Al x P layer of the second conductivity type is equal to or less than an absolute value of a critical strain amount obtained by the Matthews' relational expression, using a layer thickness of the one In 1-x Al x P layer of the second conductivity type as the critical layer thickness.
3. The optical semiconductor device according to claim 1 , wherein
the clad layer of the second conductivity type includes one InP layer of the second conductivity type and one In 1-x Al x P layer of the second conductivity type,
an Al composition x of the one In 1-x Al x P layer of the second conductivity type is equal to or greater than a value corresponding to a doping concentration of the dopant of the second conductivity type in the one In 1-x Al x P layer of the second conductivity type, and
an absolute value of a strain amount of the one In 1-x Al x P layer of the second conductivity type is equal to or less than an absolute value of a strain amount of the one In 1-x Al x P layer of the second conductivity type, the strain amount being obtained based on an average strain amount of the whole of the clad layer of the second conductivity type, the average strain amount being a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the clad layer of the second conductivity type as the critical layer thickness.
4. The optical semiconductor device according to claim 1 , wherein the clad layer of the second conductivity type includes an n (n being an integer equal to or greater than two) number of the In 1-x Al x P layers of the second conductivity type and an (n−1) number of InP layers of the second conductivity type each being disposed between adjacent In 1-x Al x P layers of the second conductivity type of the n number of the In 1-x Al x P layers.
5. The optical semiconductor device according to claim 1 , wherein
the optical semiconductor device is a semiconductor light-emitting element,
the InP substrate is an InP substrate of the first conductivity type, and
the layer thickness of the whole of the clad layer of the second conductivity type is equal to or greater than 0.5 μm and equal to or less than 2 μm.
6. The optical semiconductor device according to claim 5 , further comprising a grating layer disposed between the active layer and the clad layer of the second conductivity type.
7. The optical semiconductor device according to claim 1 , wherein
the optical semiconductor device is a semiconductor optical modulator,
the InP substrate is an InP substrate of the first conductivity type, and
the layer thickness of the whole of the clad layer of the second conductivity type is equal to or greater than 0.5 μm and equal to or less than 2 μm.
8. The optical semiconductor device according to claim 1 , wherein
the optical semiconductor device is a semiconductor light-receiving element,
the InP substrate is a semi-insulating InP substrate, and
the layer thickness of the whole of the clad layer of the second conductivity type is equal to or greater than 0.5 μm and equal to or less than 2 μm.
9. The optical semiconductor device according to claim 1 , wherein
the first conductivity type is an n-type,
the second conductivity type is a p-type, and
the dopant of the second conductivity type is one or more atoms selected from a group consisting of Zn, Mg, and Be.
10. An optical subassembly comprising the optical semiconductor device according to claim 1 .
11. An optical module comprising the optical subassembly according to claim 10 .